James R. Schwank

2.2k citations
50 papers · 1.6k indexed · 1 hit paper · h-index 17
Topics
Semiconductor materials and devices (40 papers)Radiation Effects in Electronics (37 papers)Integrated Circuits and Semiconductor Failure Analysis (28 papers)
Journals
IEEE Transactions on Nuclear ScienceECS TransactionsOSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

In The Last Decade

James R. Schwank

49 papers receiving 1.5k citations

Hit Papers

Radiation Effects in MOS Oxides20082026201420202008200400600

Peers

James R. Schwank
Comparison fields: 5 of 47
  • Electrical and Electronic Engineering 1.6k
  • Hardware and Architecture 242
  • Radiation 132
  • Materials Chemistry 128
  • Pulmonary and Respiratory Medicine 87
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Citations per field
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Citations per year

Countries citing papers authored by James R. Schwank

Since Specialization
Citations

This map shows the geographic impact of James R. Schwank's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by James R. Schwank with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites James R. Schwank more than expected).

Fields of papers citing papers by James R. Schwank

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by James R. Schwank. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by James R. Schwank. The network helps show where James R. Schwank may publish in the future.

Co-authorship network of co-authors of James R. Schwank

This figure shows the co-authorship network connecting the top 25 collaborators of James R. Schwank. A scholar is included among the top collaborators of James R. Schwank based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with James R. Schwank. James R. Schwank is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
#WorkIndexed citations
1 9
2 4
3 51
4 4
5
Radiation-hardened distributed power systems.
0
6 25
7 6
8 2
9
Radiation Effects in MOS Oxidesbreakdown →
651
10 14
11 21
12
Power MOSFET Degradation in Space Radiation Environments.
2
13 17
14
Identification of Radiation-Induced Parasitic Leakage Paths Using Light Emission Microscopy
1
15
Developing passivation layers for reducing enhanced low-dose-rate sensitivity in linear bipolar devices.
1
16 1
17
Single-event upset and snapback in silicon-on-insulator devices
3
18
Thermal-stress effects on enhanced low-dose-rate sensitivity of linear bipolar circuits
5
19
New Insights into Fully-Depleted SOI Transistor Response During Total-Dose Irradiation
2
20 40

About James R. Schwank

James R. Schwank is a scholar working on Hardware and Architecture, Electrical and Electronic Engineering and Computational Mechanics, having authored 50 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (40 papers), Radiation Effects in Electronics (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (28 papers). The work is most often cited by research in Hardware and Architecture (242 citations), Electrical and Electronic Engineering (1.6k citations) and Radiation (132 citations). James R. Schwank has collaborated with scholars based in United States, Netherlands and Canada. Frequent co-authors include M.R. Shaneyfelt, P.E. Dodd, James A. Felix, Véronique Ferlet-Cavrois, Philippe Paillet, Daniel M. Fleetwood, F.W. Sexton, Paul W. Marshall, Kenneth P. Rodbell and Kenneth A. LaBel. Their work appears in journals such as IEEE Transactions on Nuclear Science, ECS Transactions and OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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