R.K. Lawrence

1.0k total citations
52 papers, 800 citations indexed

About

R.K. Lawrence is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Hardware and Architecture. According to data from OpenAlex, R.K. Lawrence has authored 52 papers receiving a total of 800 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 4 papers in Hardware and Architecture. Recurrent topics in R.K. Lawrence's work include Semiconductor materials and devices (42 papers), Integrated Circuits and Semiconductor Failure Analysis (28 papers) and Advancements in Semiconductor Devices and Circuit Design (18 papers). R.K. Lawrence is often cited by papers focused on Semiconductor materials and devices (42 papers), Integrated Circuits and Semiconductor Failure Analysis (28 papers) and Advancements in Semiconductor Devices and Circuit Design (18 papers). R.K. Lawrence collaborates with scholars based in United States, Sweden and Belgium. R.K. Lawrence's co-authors include B. J. Mrstik, Robert E. Stahlbush, H.L. Hughes, P. J. McMarr, N.F. Haddad, H.L. Hughes, Robert A. Reed, Kevin M. Warren, N. S. Saks and V. V. Afanas’ev and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

R.K. Lawrence

46 papers receiving 761 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R.K. Lawrence United States	16	771	138	96	50	40	52	800
J.L. Leray France	22	1.1k 1.5×	190 1.4×	76 0.8×	77 1.5×	27 0.7×	66	1.2k
Arto Javanainen Finland	21	1.3k 1.6×	76 0.6×	101 1.1×	76 1.5×	59 1.5×	69	1.4k
S. Kuboyama Japan	19	1.1k 1.5×	50 0.4×	151 1.6×	66 1.3×	36 0.9×	72	1.2k
O. Flament France	20	989 1.3×	50 0.4×	121 1.3×	18 0.4×	39 1.0×	61	1.0k
Toshio Hirao Japan	14	627 0.8×	57 0.4×	56 0.6×	62 1.2×	118 3.0×	68	695
G.K. Lum United States	10	259 0.3×	42 0.3×	55 0.6×	42 0.8×	18 0.5×	30	332
James A. Felix United States	7	806 1.0×	85 0.6×	87 0.9×	23 0.5×	6 0.1×	14	838
T. Hirao Japan	16	605 0.8×	73 0.5×	87 0.9×	74 1.5×	116 2.9×	51	670
E.B. Smith United States	10	240 0.3×	105 0.8×	64 0.7×	123 2.5×	18 0.5×	22	332
M. King United States	18	870 1.1×	123 0.9×	115 1.2×	48 1.0×	16 0.4×	43	994

Countries citing papers authored by R.K. Lawrence

Since Specialization

Citations

This map shows the geographic impact of R.K. Lawrence's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.K. Lawrence with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.K. Lawrence more than expected).

Fields of papers citing papers by R.K. Lawrence

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.K. Lawrence. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.K. Lawrence. The network helps show where R.K. Lawrence may publish in the future.

Co-authorship network of co-authors of R.K. Lawrence

This figure shows the co-authorship network connecting the top 25 collaborators of R.K. Lawrence. A scholar is included among the top collaborators of R.K. Lawrence based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.K. Lawrence. R.K. Lawrence is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Haddad, N.F., R.K. Lawrence, Bin Li, et al.. (2011). Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell. IEEE Transactions on Nuclear Science. 58(3). 975–980. 30 indexed citations

Haddad, N.F., et al.. (2011). Second generation (200MHz) RAD750 microprocessor radiation evaluation. 877–880. 18 indexed citations

Lawrence, R.K., et al.. (2011). Total Ionizing Dose Considerations in Space Bound Electronics Subjected to Real Time X-Ray Radioscopic Examinations. 1–5.

Lawrence, R.K., et al.. (2010). 90-nm Digital Single Event Transient Pulsewidth Measurements. 5–5. 2 indexed citations

Lawrence, R.K., et al.. (2009). Soft Error Sensitivities in 90 nm Bulk CMOS SRAMs. 123–126. 37 indexed citations

Haddad, N.F., et al.. (2009). The Path and Challenges to 90-nm Radiation-Hardened Technology. IEEE Transactions on Nuclear Science. 56(4). 2077–2082. 7 indexed citations

Lawrence, R.K., et al.. (2008). Single Event Effect Induced Multiple-Cell Upsets in a Commercial 90 nm CMOS Digital Technology. IEEE Transactions on Nuclear Science. 55(6). 3367–3374. 48 indexed citations

Haddad, N.F., et al.. (2008). The path and challenges to 90nm radiation hardened technology. 269–273. 1 indexed citations

Lawrence, R.K., et al.. (2006). A GaN HFET Device Technology on 3" SiC Substrates for Wireless Infrastructure Applications. 706–709. 4 indexed citations

10.

McMorrow, Dale, William T. Lotshaw, Joseph S. Melinger, et al.. (2005). Single-event upset in flip-chip SRAM induced by through-wafer, two-photon absorption. IEEE Transactions on Nuclear Science. 52(6). 2421–2425. 25 indexed citations

11.

Lawrence, R.K.. (2002). Radiation effects in SOI isolation oxides. 461–464. 3 indexed citations

12.

Lawrence, R.K., J.P. Colinge, & H.L. Hughes. (2002). Radiation effects in gate-all-around structures. 80–81. 13 indexed citations

13.

Lawrence, R.K., B. J. Mrstik, H.L. Hughes, P. J. McMarr, & M.J. Anc. (2002). Positive charge trapping in SOI materials. 34–35. 1 indexed citations

14.

Lawrence, R.K., et al.. (2002). Photocurrent measurements of electron traps on ITOX processed SIMOX structures. 75. 148–149. 1 indexed citations

15.

Cristoloveanu, S., Dimitris E. Ioannou, R.K. Lawrence, G.J. Campisi, & H.L. Hughes. (2002). Asymmetrical irradiation effects in SIMOX MOSFETs. 373–377. 6 indexed citations

16.

Mrstik, B. J., V. V. Afanas’ev, A. Stesmans, P. J. McMarr, & R.K. Lawrence. (1999). Relationship between oxide density and charge trapping in SiO2 films. Journal of Applied Physics. 85(9). 6577–6588. 46 indexed citations

17.

Lawrence, R.K., B. J. Mrstik, H.L. Hughes, & P. J. McMarr. (1996). Dependence of radiation induced buried oxide charge on silicon-on-insulator fabrication technology. IEEE Transactions on Nuclear Science. 43(6). 2639–2645. 6 indexed citations

18.

Lawrence, R.K., Dimitris E. Ioannou, H.L. Hughes, P. J. McMarr, & B. J. Mrstik. (1995). Charge trapping versus buried oxide thickness for SIMOX structures. IEEE Transactions on Nuclear Science. 42(6). 2114–2121. 7 indexed citations

19.

Stahlbush, Robert E., R.K. Lawrence, & William R. Richards. (1989). Geometric components of charge pumping current in SOS devices. IEEE Transactions on Nuclear Science. 36(6). 1998–2005. 12 indexed citations

20.

Stahlbush, Robert E., R.K. Lawrence, H.L. Hughes, & N. S. Saks. (1988). Annealing of total dose damage: redistribution of interface state density on [100], [110] and [111] orientation silicon. IEEE Transactions on Nuclear Science. 35(6). 1192–1196. 40 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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