K. Saarinen

6.8k total citations · 1 hit paper
178 papers, 5.8k citations indexed

About

K. Saarinen is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Materials Chemistry. According to data from OpenAlex, K. Saarinen has authored 178 papers receiving a total of 5.8k indexed citations (citations by other indexed papers that have themselves been cited), including 132 papers in Electrical and Electronic Engineering, 122 papers in Mechanics of Materials and 62 papers in Materials Chemistry. Recurrent topics in K. Saarinen's work include Muon and positron interactions and applications (118 papers), Semiconductor materials and devices (107 papers) and GaN-based semiconductor devices and materials (46 papers). K. Saarinen is often cited by papers focused on Muon and positron interactions and applications (118 papers), Semiconductor materials and devices (107 papers) and GaN-based semiconductor devices and materials (46 papers). K. Saarinen collaborates with scholars based in Finland, France and Sweden. K. Saarinen's co-authors include P. Hautojärvi, Filip Tuomisto, C. Corbel, D. C. Look, V. Ranki, T. Suski, J. Nissilä, I. Grzegory, J. Oila and M. J. Puska and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

K. Saarinen

171 papers receiving 5.6k citations

Hit Papers

Observation of Native Ga Vacancies in GaN by Positron Ann... 1997 2026 2006 2016 1997 100 200 300 400

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Saarinen Finland 39 3.3k 3.0k 2.6k 2.0k 1.7k 178 5.8k
Filip Tuomisto Finland 37 2.4k 0.7× 3.6k 1.2× 1.1k 0.4× 1.3k 0.6× 1.8k 1.1× 233 5.1k
B. Pécz Hungary 37 2.2k 0.7× 2.7k 0.9× 571 0.2× 971 0.5× 1.2k 0.7× 277 4.5k
M. Holtz United States 37 2.3k 0.7× 1.9k 0.6× 582 0.2× 1.7k 0.8× 1.4k 0.8× 174 4.4k
P. Ruterana France 34 2.0k 0.6× 1.9k 0.6× 1.2k 0.5× 2.4k 1.2× 983 0.6× 291 4.4k
Manfred Reiche Germany 28 2.1k 0.6× 2.1k 0.7× 474 0.2× 1.5k 0.8× 852 0.5× 179 4.3k
S. M. Bedair United States 37 2.9k 0.9× 2.5k 0.8× 716 0.3× 2.4k 1.2× 1.4k 0.9× 253 5.5k
Menno J. Kappers United Kingdom 46 2.5k 0.7× 2.8k 0.9× 1.8k 0.7× 5.5k 2.7× 2.2k 1.3× 311 7.0k
H. P. Strunk Germany 37 2.8k 0.8× 2.2k 0.8× 676 0.3× 699 0.3× 474 0.3× 232 4.6k
P. Vennéguès France 38 1.5k 0.4× 2.1k 0.7× 1.1k 0.4× 3.3k 1.6× 1.9k 1.2× 172 4.4k
N. A. El-Masry United States 32 1.7k 0.5× 2.4k 0.8× 578 0.2× 2.1k 1.1× 1.5k 0.9× 151 4.2k

Countries citing papers authored by K. Saarinen

Since Specialization
Citations

This map shows the geographic impact of K. Saarinen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Saarinen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Saarinen more than expected).

Fields of papers citing papers by K. Saarinen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Saarinen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Saarinen. The network helps show where K. Saarinen may publish in the future.

Co-authorship network of co-authors of K. Saarinen

This figure shows the co-authorship network connecting the top 25 collaborators of K. Saarinen. A scholar is included among the top collaborators of K. Saarinen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Saarinen. K. Saarinen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Makkonen, Ilja, et al.. (2005). Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy. Physical Review Letters. 94(16). 165501–165501. 33 indexed citations
2.
Tuomisto, Filip, K. Saarinen, D. C. Look, & G. C. Farlow. (2005). Introduction and recovery of point defects in electron-irradiated ZnO. Physical Review B. 72(8). 279 indexed citations
3.
Ranki, V. & K. Saarinen. (2004). Formation of Thermal Vacancies in Highly As and P Doped Si. Physical Review Letters. 93(25). 255502–255502. 43 indexed citations
4.
Nissilä, J., et al.. (2004). Performance analysis of a digital positron lifetime spectrometer. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 538(1-3). 778–789. 41 indexed citations
5.
Tuomisto, Filip, et al.. (2004). Ga Sublattice Defects in (Ga,Mn)As: Thermodynamical and Kinetic Trends. Physical Review Letters. 93(5). 55505–55505. 26 indexed citations
6.
Tuomisto, Filip, V. Ranki, K. Saarinen, & D. C. Look. (2003). Evidence of the Zn Vacancy Acting as the Dominant Acceptor inn-Type ZnO. Physical Review Letters. 91(20). 205502–205502. 413 indexed citations
7.
Dekker, James, K. Saarinen, Halldór Ólafsson, & E.Ö. Sveinbjörnsson. (2003). Positron Annihilation Studies of Defects at the SiO<sub>2</sub>/SiC Interface. Materials science forum. 433-436. 543–546. 2 indexed citations
8.
Saarinen, K. & V. Ranki. (2003). Identification of vacancy complexes in Si by positron annihilation. Journal of Physics Condensed Matter. 15(39). S2791–S2801. 4 indexed citations
9.
Ranki, V., K. Saarinen, Jacob Fage-Pedersen, J. Lundsgaard Hansen, & A. Nylandsted Larsen. (2003). Electrical deactivation by vacancy-impurity complexes in highly As-doped Si. Physical review. B, Condensed matter. 67(4). 29 indexed citations
10.
Sihto, S.‐L., J. Slotte, K. Saarinen, et al.. (2003). Vacancy-phosphorus complexes in strainedSi1xGex:Structure and stability. Physical review. B, Condensed matter. 68(11). 37 indexed citations
11.
Ranki, V., J. Nissilä, & K. Saarinen. (2002). Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si. Physical Review Letters. 88(10). 105506–105506. 46 indexed citations
12.
Fang, Z.-Q., D. C. Look, S. Kuisma, K. Saarinen, & P. Hautojärvi. (2002). Point defects in undoped semi-insulating GaAs: correlation between thermally stimulated current and positron annihilation spectroscopies. 83 87. 149–154.
13.
Dekker, James, et al.. (2002). Characterization of superlattices using positron annihilation. Applied Surface Science. 194(1-4). 97–100. 4 indexed citations
14.
Barthe, M.F., L. Henry, C. Corbel, et al.. (2000). Positron annihilation at proton-induced defects in6HSiC/SiCand6HSiC/SiO2/Sistructures. Physical review. B, Condensed matter. 62(24). 16638–16644. 15 indexed citations
15.
Saarinen, K., J. Nissilä, H. Kauppinen, et al.. (1999). Identification of Vacancy-Impurity Complexes in Highlyn-Type Si. Physical Review Letters. 82(9). 1883–1886. 69 indexed citations
16.
Raühala, E., T. Ahlgren, Jouni Räisänen, et al.. (1998). Defect formation and annealing behavior of InP implanted by low-energy N15 ions. Journal of Applied Physics. 83(2). 738–746. 9 indexed citations
17.
Saarinen, K., H. Kauppinen, T. Laine, & P. Hautojärvi. (1997). Identification of vacancies by the core electron momentum distribution: application to InP based compound semiconductors. Applied Surface Science. 116. 273–277. 2 indexed citations
18.
Kauppinen, H., C. Corbel, Kerstin Skog, et al.. (1997). Divacancy and resistivity profiles in n-type Si implanted with 1.15-MeV protons. Physical review. B, Condensed matter. 55(15). 9598–9608. 41 indexed citations
19.
Saarinen, K., et al.. (1995). Introduction of metastable vacancy defects in electron-irradiated semi-insulating GaAs. Physical review. B, Condensed matter. 51(20). 14152–14163. 24 indexed citations
20.
Saarinen, K., Ari P. Seitsonen, P. Hautojärvi, & C. Corbel. (1995). Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy. Physical review. B, Condensed matter. 52(15). 10932–10946. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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