J. C. Bean

5.1k citations

67 papers · 4.0k indexed · 2 hit papers · h-index 27

Impact in

Structural Biology top 2%
Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Co-authors: R. People R. Hull A. T. Fiory D. V. Lang A. M. Sergent L. C. Feldman R. T. Lynch J. M. Gibson
Journals: Applied Physics Letters (20 papers)Journal of Applied Physics (6 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (6 papers)Physical review. B, Condensed matter (5 papers)Surface Science (4 papers)
Partner nations: United States Germany Australia

In The Last Decade

J. C. Bean

64 papers receiving 3.8k citations

Hit Papers

align trajectories log scale

Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures 1985 · 1.4k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1985 Applied Physics Letters
1984 Applied Physics Letters

Peers

Countries citing papers authored by J. C. Bean

Since Specialization

Citations

This map shows the geographic impact of J. C. Bean's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. Bean with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. Bean more than expected).

Fields of papers citing papers by J. C. Bean

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. Bean. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. Bean. The network helps show where J. C. Bean may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. C. Bean, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. C. Bean Line = papers co-authored together J. C. Bean links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	From Headlines to Deadlines: Adlai Stevenson’s “Crusade” Against Gambling in Illinois Journal of the Illinois State Historical Society (1998-) ·J. C. Bean	2020	0
2	Structural Study of the Annealing of Alkylsiloxane Self-Assembled Monolayers on Silicon by High-Resolution X-ray Diffraction The Journal of Physical Chemistry ·Hakan Gök, Zhenlong Han, Robert F. Fischetti, J. Kent Blasie, L. J. Peticolas, J. C. Bean	1995	6
3	Design and fabrication of asymmetric strained layer mirrors for optoelectronic applications Applied Physics Letters ·J. C. Bean, L. J. Peticolas, R. Hull, David L. Windt, 陈英华, Joe C. Campbell	1993	13
4	Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained-layer infrared photodetector operating between 20 and 77 K Applied Physics Letters ·R. People, J. C. Bean, C. G. Bethea, S. K. Sputz, L. J. Peticolas	1992	57
5	Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitter Applied Physics Letters ·Bahram Jalali, C. A. King, G. S. Higashi, J. C. Bean, R. Hull, Y. F. Hsieh, J. M. Macaulay, J. M. Poate	1991	2
6	Improved minority-carrier lifetime in Si/SiGe heterojunction bipolar transistors grown by molecular beam epitaxy Applied Physics Letters ·G. S. Higashi, J. C. Bean, Mikko Timo Ensio Pehkonen, R.D. Yadvish, H. Temkin	1990	15
7	Experimental and Theoretical Analysis of Strain Relaxation in Ge_xSi_1-x/Si(100) Heteroepitaxy MRS Proceedings ·R. Hull, J. C. Bean	1989	3
8	Ion beam induced epitaxial crystallization of GexSi1−x/Si structures Applied Physics Letters ·R. G. Elliman, M. C. Ridgway, J. S. Williams, J. C. Bean	1989	21
9	Electronic structure of Ge/Si monolayer strained-layer superlattices Physical review. B, Condensed matter ·T. P. Pearsall, J. Bevk, J. C. Bean, J. M. Bonar, J. P. Mannáerts, A. Ourmazd	1989	85
10	Propagation of Dislocations Through GeSi/Si Strained Layers and Superlattices MRS Proceedings ·R. Hull, J. C. Bean, R. E. Leibenguth	1988	10
11	Summary Abstract: Bridging the gap between solid–solid and solid–vacuum interfaces: A study of buried Si/αSi interfaces Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·H.‐J. Gossmann, J. M. Gibson, J. C. Bean, R. T. Tung, L. C. Feldman	1987	1
12	New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to Cu Applied Physics Letters ·R. Sauer, M. T. Asom, R. People, D. V. Lang, Lionel C. Kimerling, J. C. Bean	1987	3
13	High photoconductive gain in GexSi1−x/Si strained-layer superlattice detectors operating at λ=1.3 μm Applied Physics Letters ·H. Temkin, J. C. Bean, T. P. Pearsall, N.A. Olsson, D. V. Lang	1986	27
14	Waveguide infrared photodetectors on a silicon chip IEEE Electron Device Letters ·Serge Luryi, T. P. Pearsall, H. Temkin, J. C. Bean	1986	44
15	Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures Applied Physics Letters ·R. People, J. C. Bean Hit paper breakdown →	1985	1369
16	Thermal relaxation of metastable strained-layerGexSi1−x/Si epitaxy Physical review. B, Condensed matter ·A. T. Fiory, J. C. Bean, R. Hull, S. Nakahara	1985	79
17	Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100) Journal of Applied Physics ·A. T. Fiory, J. C. Bean, L. C. Feldman, Ian Robinson	1984	120
18	Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements Applied Physics Letters ·J. C. Bean, J. M. Poate	1980	70
19	Effect of structure and impurities on the epitaxial regrowth of amorphous silicon Applied Physics Letters ·G. Fóti, J. C. Bean, J. M. Poate, C. W. Magee	1980	33
20	A DLTS study of the gap states of amorphous Si1−H alloys Journal of Non-Crystalline Solids ·J. David Cohen, D. V. Lang, J. C. Bean, J. P. Harbison	1980	17

About J. C. Bean

J. C. Bean is a scholar working on Structural Biology, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 67 papers that have together received 4.0k indexed citations. Recurring topics across this work include Silicon Nanostructures and Photoluminescence (26 papers), Semiconductor Quantum Structures and Devices (21 papers), Semiconductor materials and interfaces (20 papers), Semiconductor materials and devices (15 papers), Silicon and Solar Cell Technologies (13 papers), Photonic and Optical Devices (12 papers), Thin-Film Transistor Technologies (11 papers) and Surface and Thin Film Phenomena (8 papers). The work is most often cited by research in Structural Biology (121 citations), Atomic and Molecular Physics, and Optics (2.5k citations), Electrical and Electronic Engineering (3.1k citations), Surfaces, Coatings and Films (245 citations) and Materials Chemistry (1.5k citations). J. C. Bean has collaborated with scholars based in United States, Germany and Australia. Frequent co-authors include R. People, R. Hull, A. T. Fiory, D. V. Lang, A. M. Sergent, L. C. Feldman, R. T. Lynch, J. M. Gibson, J. M. Poate and T. E. Seidel. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Physical review. B, Condensed matter and Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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