Lap Chan

1.0k total citations
68 papers, 812 citations indexed

About

Lap Chan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Lap Chan has authored 68 papers receiving a total of 812 indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in Lap Chan's work include Semiconductor materials and devices (52 papers), Advancements in Semiconductor Devices and Circuit Design (40 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). Lap Chan is often cited by papers focused on Semiconductor materials and devices (52 papers), Advancements in Semiconductor Devices and Circuit Design (40 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). Lap Chan collaborates with scholars based in Singapore, United States and Finland. Lap Chan's co-authors include Yee‐Chia Yeo, Ganesh S. Samudra, Grace Huiqi Wang, Eng-Huat Toh, Ganesh Samudra, Guo‐Qiang Lo, Shyue Seng Tan, T. P. Chen, Chun-Huat Heng and Mingbin Yu and has published in prestigious journals such as Applied Physics Letters, The Journal of Physical Chemistry B and Journal of The Electrochemical Society.

In The Last Decade

Lap Chan

63 papers receiving 778 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Lap Chan Singapore 16 729 195 149 126 40 68 812
J. van Deelen Netherlands 14 498 0.7× 94 0.5× 259 1.7× 94 0.7× 28 0.7× 44 577
C. Demeurisse Belgium 13 472 0.6× 346 1.8× 139 0.9× 72 0.6× 24 0.6× 37 527
Tien Sheng Chao Taiwan 14 428 0.6× 70 0.4× 170 1.1× 74 0.6× 75 1.9× 57 496
W. Kissinger Germany 13 369 0.5× 139 0.7× 264 1.8× 72 0.6× 36 0.9× 33 430
Sebastião Gomes dos Santos Filho Brazil 10 312 0.4× 61 0.3× 162 1.1× 62 0.5× 53 1.3× 62 424
М. І. Ілащук Ukraine 14 414 0.6× 181 0.9× 279 1.9× 43 0.3× 21 0.5× 50 489
Т.Н. Кост Russia 16 495 0.7× 144 0.7× 278 1.9× 59 0.5× 23 0.6× 43 563
C. Hobbs United States 15 781 1.1× 118 0.6× 287 1.9× 62 0.5× 71 1.8× 46 826
P. Y. Hung United States 10 519 0.7× 76 0.4× 228 1.5× 58 0.5× 39 1.0× 29 576
Erwann Fourmond France 15 604 0.8× 199 1.0× 258 1.7× 76 0.6× 25 0.6× 39 657

Countries citing papers authored by Lap Chan

Since Specialization
Citations

This map shows the geographic impact of Lap Chan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lap Chan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lap Chan more than expected).

Fields of papers citing papers by Lap Chan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lap Chan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lap Chan. The network helps show where Lap Chan may publish in the future.

Co-authorship network of co-authors of Lap Chan

This figure shows the co-authorship network connecting the top 25 collaborators of Lap Chan. A scholar is included among the top collaborators of Lap Chan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lap Chan. Lap Chan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, Jian, et al.. (2009). Improvement of Negative Bias Temperature Instability by Stress Proximity Technique. IEEE Transactions on Electron Devices. 57(1). 238–243. 4 indexed citations
2.
Chin, Hock-Chun, et al.. (2008). Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During Silicidation. IEEE Electron Device Letters. 29(7). 756–758. 3 indexed citations
3.
Chan, Lap, et al.. (2008). Low Schottky barrier height for silicides on n-type Si (100) by interfacial selenium segregation during silicidation. Applied Physics Letters. 93(7). 26 indexed citations
4.
Peng, Ning, et al.. (2007). Current instability of carbon nanotube field effect transistors. Nanotechnology. 18(42). 424035–424035. 10 indexed citations
5.
Chan, Lap, et al.. (2007). Effective Schottky Barrier Height Reduction Using Sulfur or Selenium at the NiSi/n-Si (100) Interface for Low Resistance Contacts. IEEE Electron Device Letters. 28(12). 1102–1104. 40 indexed citations
6.
Toh, Eng-Huat, Grace Huiqi Wang, Lap Chan, et al.. (2007). Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region. IEEE Transactions on Electron Devices. 54(10). 2778–2785. 32 indexed citations
7.
Toh, Eng-Huat, Grace Huiqi Wang, Ming Zhu, et al.. (2007). Impact Ionization Nanowire Transistor with Multiple-Gates, Silicon-Germanium Impact Ionization Region, and Sub-5 mV/decade Subtheshold Swing. National University of Singapore. 195–198. 9 indexed citations
8.
Chan, Lap, et al.. (2006). Gate-all-around quantum-wire field-effect transistor with Dopant Segregation at Metal-Semiconductor-Metal heterostucture. National University of Singapore. 92–93. 7 indexed citations
9.
Toh, Eng-Huat, Grace Huiqi Wang, Guo‐Qiang Lo, et al.. (2006). A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor. 951–954. 19 indexed citations
10.
Chor, Eng Fong, et al.. (2005). Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si/sub 1-y/C/sub y/ incorporation. IEEE Electron Device Letters. 26(4). 252–254. 3 indexed citations
11.
Chiah, Siau Ben, et al.. (2004). Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity. TechConnect Briefs. 2(2004). 175–178.
12.
Nordlund, K., H.‐J. Gossmann, Nana Ma, et al.. (2004). The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 228(1-4). 240–244. 6 indexed citations
13.
Tan, L.S., et al.. (2004). Electrical evaluation of laser annealed junctions by Hall measurements. Thin Solid Films. 462-463. 72–75. 1 indexed citations
14.
Chor, Eng Fong, et al.. (2003). Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion. Applied Physics Letters. 83(20). 4169–4171. 8 indexed citations
15.
Tan, Shyue Seng, T. P. Chen, Jia Mei Soon, et al.. (2003). Neighboring effect in nitrogen-enhanced negative bias temperature instability. 16 indexed citations
16.
17.
Tan, Shyue Seng, et al.. (2002). Influence of Nitrogen Proximity from the Si/SiO2 Interface on Negative Bias Temperature Instability. Japanese Journal of Applied Physics. 41(10A). L1031–L1031. 12 indexed citations
18.
Chor, Eng Fong, et al.. (2002). Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication. Microelectronics Journal. 33(1-2). 55–60. 2 indexed citations
19.
Ng, Hou T., Maw Lin Foo, Aiping Fang, et al.. (2001). Soft-Lithography-Mediated Chemical Vapor Deposition of Architectured Carbon Nanotube Networks on Elastomeric Polymer. Langmuir. 18(1). 1–5. 25 indexed citations
20.
Gong, Hao, et al.. (1999). Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation. Applied Physics Letters. 75(3). 355–357. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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