S. T. Pantelides

4.6k total citations · 1 hit paper
72 papers, 3.6k citations indexed

About

S. T. Pantelides is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. T. Pantelides has authored 72 papers receiving a total of 3.6k indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electrical and Electronic Engineering, 33 papers in Materials Chemistry and 21 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. T. Pantelides's work include Semiconductor materials and devices (31 papers), Silicon and Solar Cell Technologies (13 papers) and Silicon Nanostructures and Photoluminescence (12 papers). S. T. Pantelides is often cited by papers focused on Semiconductor materials and devices (31 papers), Silicon and Solar Cell Technologies (13 papers) and Silicon Nanostructures and Photoluminescence (12 papers). S. T. Pantelides collaborates with scholars based in United States, Greece and Spain. S. T. Pantelides's co-authors include Chris G. Van de Walle, Yaneer Bar-Yam, P. J. H. Denteneer, Leonidas Tsetseris, Massimiliano Di Ventra, Peter E. Blöchl, S. J. Pennycook, Amitesh Maiti, N. D. Lang and David B. Laks and has published in prestigious journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

S. T. Pantelides

71 papers receiving 3.5k citations

Hit Papers

Theory of hydrogen diffus... 1989 2026 2001 2013 1989 100 200 300 400

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. T. Pantelides United States 32 2.1k 2.1k 1.1k 413 285 72 3.6k
M. Brunel France 26 1.1k 0.5× 1.3k 0.6× 698 0.6× 405 1.0× 427 1.5× 140 2.4k
K. M. Ho United States 34 1.0k 0.5× 1.6k 0.7× 1.8k 1.7× 400 1.0× 440 1.5× 81 3.6k
G. S. Cargill United States 27 1.2k 0.6× 1.3k 0.6× 1.1k 1.1× 577 1.4× 337 1.2× 109 3.0k
Paul F. Fewster United Kingdom 25 1.1k 0.5× 1.0k 0.5× 1.1k 1.1× 288 0.7× 244 0.9× 74 2.2k
G. E. Jellison United States 15 2.5k 1.2× 2.1k 1.0× 502 0.5× 484 1.2× 480 1.7× 44 3.6k
Hiroyuki Kageshima Japan 31 2.4k 1.1× 2.8k 1.3× 1.3k 1.2× 238 0.6× 610 2.1× 199 4.0k
Oleg Pankratov Germany 33 1.6k 0.8× 2.4k 1.1× 1.9k 1.8× 349 0.8× 303 1.1× 102 3.9k
Jean Jordan‐Sweet United States 36 2.5k 1.2× 2.2k 1.0× 1.6k 1.5× 738 1.8× 594 2.1× 166 4.1k
Stefan Zollner United States 33 3.0k 1.4× 1.6k 0.8× 1.8k 1.7× 497 1.2× 867 3.0× 161 4.1k
Nathalie Vast France 30 877 0.4× 2.4k 1.1× 910 0.8× 456 1.1× 172 0.6× 71 3.3k

Countries citing papers authored by S. T. Pantelides

Since Specialization
Citations

This map shows the geographic impact of S. T. Pantelides's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. T. Pantelides with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. T. Pantelides more than expected).

Fields of papers citing papers by S. T. Pantelides

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. T. Pantelides. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. T. Pantelides. The network helps show where S. T. Pantelides may publish in the future.

Co-authorship network of co-authors of S. T. Pantelides

This figure shows the co-authorship network connecting the top 25 collaborators of S. T. Pantelides. A scholar is included among the top collaborators of S. T. Pantelides based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. T. Pantelides. S. T. Pantelides is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fleetwood, Daniel M., Pengfei Wang, En Xia Zhang, Ronald D. Schrimpf, & S. T. Pantelides. (2020). Defect Dehydrogenation in Si-MOS and Compound-Semiconductor-Based Devices. 1–4. 1 indexed citations
2.
Frechero, M.A., Mirko Rocci, Gabriel Sánchez‐Santolino, et al.. (2015). Paving the way to nanoionics: atomic origin of barriers for ionic transport through interfaces. Scientific Reports. 5(1). 17229–17229. 36 indexed citations
3.
Klie, Robert F., Qiao Qiao, Tadas Paulauskas, et al.. (2012). Observations ofCo4+in a Higher Spin State and the Increase in the Seebeck Coefficient of ThermoelectricCa3Co4O9. Physical Review Letters. 108(19). 196601–196601. 49 indexed citations
4.
Tsetseris, Leonidas & S. T. Pantelides. (2012). Molecular doping of graphene with ammonium groups. Physical Review B. 85(15). 37 indexed citations
5.
Yan, Jia-An, et al.. (2011). Time-domain simulation of electron diffraction in crystals. Physical Review B. 84(22). 17 indexed citations
6.
Tao, Jing, D. Niebieskikwiat, M. Varela, et al.. (2009). Direct Imaging of Nanoscale Phase Separation inLa0.55Ca0.45MnO3: Relationship to Colossal Magnetoresistance. Physical Review Letters. 103(9). 97202–97202. 103 indexed citations
7.
Beck, Matthew J., Leonidas Tsetseris, & S. T. Pantelides. (2007). Stability and Dynamics of Frenkel Pairs in Si. Physical Review Letters. 99(21). 215503–215503. 9 indexed citations
8.
Batyrev, Iskander G., Martin Rodgers, Daniel M. Fleetwood, Ronald D. Schrimpf, & S. T. Pantelides. (2006). Effects of Water on the Aging and Radiation Response of MOS Devices. IEEE Transactions on Nuclear Science. 53(6). 3629–3635. 21 indexed citations
9.
Schrimpf, Ronald D., et al.. (2006). First-principles modeling of double-gate UTSOI MOSFETs. 597–600. 14 indexed citations
10.
Varga, K., et al.. (2004). Critical layer thickness in Stranski–Krastanow growth of Ge on Si(001). Surface Science. 562(1-3). L225–L230. 14 indexed citations
11.
Tsetseris, Leonidas & S. T. Pantelides. (2004). Migration, incorporation, and passivation reactions of molecular hydrogen at theSiSiO2interface. Physical Review B. 70(24). 50 indexed citations
12.
Lu, Zhong-Yi, Christopher Nicklaw, Daniel M. Fleetwood, Ronald D. Schrimpf, & S. T. Pantelides. (2002). The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. APS March Meeting Abstracts. 15 indexed citations
13.
Maiti, Amitesh, G. D. Mahan, & S. T. Pantelides. (1997). Dynamical simulations of nonequilibrium processes — Heat flow and the Kapitza resistance across grain boundaries. Solid State Communications. 102(7). 517–521. 202 indexed citations
14.
Blöchl, Peter E., Enrico Smargiassi, Roberto Car, et al.. (1993). First-principles calculations of self-diffusion constants in silicon. Physical Review Letters. 70(16). 2435–2438. 218 indexed citations
15.
Needels, M., J. D. Joannopoulos, Yaneer Bar-Yam, & S. T. Pantelides. (1991). Oxygen complexes in silicon. Physical review. B, Condensed matter. 43(5). 4208–4215. 60 indexed citations
16.
Bar‐Yam, Yaneer, S. T. Pantelides, & J. D. Joannopoulos. (1989). Ab initiopseudopotential solid-state calculations of highly electronegative first-row elements. Physical review. B, Condensed matter. 39(5). 3396–3399. 16 indexed citations
17.
Walle, Chris G. Van de, P. J. H. Denteneer, Yaneer Bar-Yam, & S. T. Pantelides. (1989). Theory of hydrogen diffusion and reactions in crystalline silicon. Physical review. B, Condensed matter. 39(15). 10791–10808. 407 indexed citations breakdown →
18.
Walle, Chris G. Van de, Yaneer Bar-Yam, F. R. McFeely, & S. T. Pantelides. (1988). Summary Abstract: Theoretical investigations of fluorine–silicon systems. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1973–1974. 4 indexed citations
19.
Broughton, J. Q., William Krakow, & S. T. Pantelides. (1986). Computer-based microscopic description of the structure and properties of materials. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 43 indexed citations
20.
Feenstra, R. M. & S. T. Pantelides. (1985). Electron-hole exchange transitions at defects in semiconduc- tors. Physical review. B, Condensed matter. 31(6). 4083–4085. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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