K.K. Ng

2.8k total citations · 1 hit paper
74 papers, 2.2k citations indexed

About

K.K. Ng is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, K.K. Ng has authored 74 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in K.K. Ng's work include Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Semiconductor materials and interfaces (14 papers). K.K. Ng is often cited by papers focused on Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Semiconductor materials and interfaces (14 papers). K.K. Ng collaborates with scholars based in United States, Germany and Australia. K.K. Ng's co-authors include J. Bude, G. D. Wilk, Bingzheng Yang, H.C. Card, G.W. Taylor, Subrata Halder, James C. M. Hwang, M. Hong, H.‐J. Gossmann and W.T. Lynch and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

K.K. Ng

71 papers receiving 2.1k citations

Hit Papers

GaN metal-oxide-semiconductor high-electron-mobility-tran... 2005 2026 2012 2019 2005 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
    2005 437 citations Bingzheng Yang, K.K. Ng et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K.K. Ng United States 20 2.0k 570 533 447 335 74 2.2k
Nobuyuki Sugii Japan 25 2.0k 1.0× 791 1.4× 380 0.7× 364 0.8× 278 0.8× 246 2.4k
P. Kiesel Germany 23 1.5k 0.8× 468 0.8× 778 1.5× 528 1.2× 229 0.7× 115 2.2k
Chun‐Yen Chang Taiwan 21 1.5k 0.8× 431 0.8× 615 1.2× 485 1.1× 264 0.8× 174 1.8k
Ganesh S. Samudra Singapore 31 3.1k 1.6× 513 0.9× 638 1.2× 330 0.7× 202 0.6× 201 3.3k
Yan‐Kuin Su Taiwan 22 1.3k 0.7× 630 1.1× 322 0.6× 466 1.0× 394 1.2× 199 1.8k
K. Pressel Germany 23 1.2k 0.6× 521 0.9× 416 0.8× 295 0.7× 225 0.7× 113 1.6k
Masamichi Akazawa Japan 20 1.1k 0.6× 303 0.5× 622 1.2× 452 1.0× 257 0.8× 97 1.4k
T.P. Ma United States 26 3.1k 1.6× 921 1.6× 470 0.9× 206 0.5× 261 0.8× 102 3.3k
Ryuta Tsuchiya Japan 19 1.3k 0.6× 1.2k 2.2× 271 0.5× 399 0.9× 763 2.3× 66 2.1k
Youngje Sung South Korea 27 2.1k 1.1× 215 0.4× 363 0.7× 449 1.0× 199 0.6× 145 2.6k

Countries citing papers authored by K.K. Ng

Since Specialization
Citations

This map shows the geographic impact of K.K. Ng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.K. Ng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.K. Ng more than expected).

Fields of papers citing papers by K.K. Ng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.K. Ng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.K. Ng. The network helps show where K.K. Ng may publish in the future.

Co-authorship network of co-authors of K.K. Ng

This figure shows the co-authorship network connecting the top 25 collaborators of K.K. Ng. A scholar is included among the top collaborators of K.K. Ng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K.K. Ng. K.K. Ng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ng, K.K., et al.. (2014). Transistor roadmap projection using predictive full-band atomistic modeling. Applied Physics Letters. 105(8). 10 indexed citations
2.
Tan, S.Y., et al.. (2013). Factors that affect hotspot localization in Infrared Lock-in Thermography. 341–346. 3 indexed citations
3.
Ng, K.K., et al.. (2006). Is CO2 bubbling (carbonation) a requirement at semiconductor wafer sawing process. Electrical Overstress/Electrostatic Discharge Symposium. 253–259. 3 indexed citations
4.
Wilk, G. D., Bingzheng Yang, J. Kwo, et al.. (2004). GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition. Journal of Electronic Materials. 33(8). 912–915. 14 indexed citations
5.
6.
Yang, Bing-Shiang, J. Kwo, M. Frei, et al.. (2003). Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric. Journal of Crystal Growth. 251(1-4). 837–842. 18 indexed citations
7.
Booth, Robert W., et al.. (2002). Modeling of correlated noise in RF bipolar devices. 2. 941–944.
8.
9.
Ng, K.K., et al.. (2001). Effective on-current of MOSFETs for large-signal speed consideration. 85. 31.5.1–31.5.4. 7 indexed citations
10.
King, C. A., et al.. (1998). Lateral etching and filling of high aspect ratio nanometer-size cavities for silicon device structures. Applied Physics Letters. 73(20). 2947–2949. 8 indexed citations
11.
Pan, Yutao, K.K. Ng, & C.C. Wei. (1994). Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's. IEEE Electron Device Letters. 15(12). 499–501. 42 indexed citations
12.
Ng, K.K., et al.. (1993). An improved generalized guide for MOSFET scaling. IEEE Transactions on Electron Devices. 40(10). 1895–1897. 25 indexed citations
13.
Ng, K.K., et al.. (1990). On the calculation of specific contact resistivity on. IEEE Transactions on Electron Devices. 37(6). 1535–1537. 61 indexed citations
14.
Ng, K.K., et al.. (1990). Suppression of hot-carrier degradation in Si MOSFETs by germanium doping. IEEE Electron Device Letters. 11(1). 45–47. 13 indexed citations
15.
Tung, R. T., K.K. Ng, J. M. Gibson, & A. F. J. Levi. (1986). Schottky-barrier heights of single-crystalNiSi2on Si(111): The effect of a surfacep-njunction. Physical review. B, Condensed matter. 33(10). 7077–7090. 68 indexed citations
16.
Ng, K.K., et al.. (1985). The spreading resistance of MOSFET's. IEEE Electron Device Letters. 6(4). 195–198. 16 indexed citations
17.
Ng, K.K. & J. R. Ligenza. (1984). The Mechanism of Plasma Oxidation on Floating Silicon Substrates. Journal of The Electrochemical Society. 131(8). 1968–1970. 5 indexed citations
18.
Ng, K.K., G.W. Taylor, & Amit Kumar Sinha. (1982). Instability of MOSFET's due to redistribution of Oxide charges. IEEE Transactions on Electron Devices. 29(8). 1323–1330. 8 indexed citations
19.
Card, H.C. & K.K. Ng. (1979). Tunneling in ultrathin SiO2 layers on silicon: Comments on dispersion relations for electrons and holes. Solid State Communications. 31(11). 877–879. 6 indexed citations
20.
Ng, K.K. & H.C. Card. (1977). Photocurrent suppression and interface state recombination in MIS-Schottky barriers. 57–61. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Nobuyuki Sugii Breakdown of academic impact, for papers by P. Kiesel Breakdown of academic impact, for papers by Chun‐Yen Chang Breakdown of academic impact, for papers by Ganesh S. Samudra Breakdown of academic impact, for papers by Yan‐Kuin Su Breakdown of academic impact, for papers by K. Pressel Breakdown of academic impact, for papers by Masamichi Akazawa Breakdown of academic impact, for papers by T.P. Ma Breakdown of academic impact, for papers by Ryuta Tsuchiya Breakdown of academic impact, for papers by Youngje Sung
Rankless by CCL
2026