J.‐M. Baribeau

5.6k total citations · 1 hit paper
215 papers, 4.5k citations indexed

About

J.‐M. Baribeau is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J.‐M. Baribeau has authored 215 papers receiving a total of 4.5k indexed citations (citations by other indexed papers that have themselves been cited), including 166 papers in Electrical and Electronic Engineering, 122 papers in Atomic and Molecular Physics, and Optics and 118 papers in Materials Chemistry. Recurrent topics in J.‐M. Baribeau's work include Silicon Nanostructures and Photoluminescence (103 papers), Semiconductor materials and interfaces (70 papers) and Thin-Film Transistor Technologies (58 papers). J.‐M. Baribeau is often cited by papers focused on Silicon Nanostructures and Photoluminescence (103 papers), Semiconductor materials and interfaces (70 papers) and Thin-Film Transistor Technologies (58 papers). J.‐M. Baribeau collaborates with scholars based in Canada, United States and France. J.‐M. Baribeau's co-authors include D. J. Lockwood, D. C. Houghton, D. E. Jesson, Stephen J. Pennycook, M. W. C. Dharma‐wardana, T. E. Jackman, G. I. Sproule, L. Tsybeskov, Randall L. Headrick and M. W. Denhoff and has published in prestigious journals such as Nature, Physical Review Letters and Physical review. B, Condensed matter.

In The Last Decade

J.‐M. Baribeau

210 papers receiving 4.4k citations

Hit Papers

Quantum confinement and light emission in SiO2/Si superla... 1995 2026 2005 2015 1995 100 200 300 400

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.‐M. Baribeau Canada 33 3.1k 2.7k 2.2k 1.2k 347 215 4.5k
P. J. Silvėrman United States 39 3.0k 1.0× 1.2k 0.4× 2.6k 1.2× 874 0.7× 539 1.6× 117 4.8k
Vu Thien Binh France 29 1.3k 0.4× 2.2k 0.8× 1.7k 0.8× 1.1k 0.9× 291 0.8× 105 3.8k
A.G. Cullis United Kingdom 29 3.0k 1.0× 2.5k 0.9× 1.4k 0.6× 1.4k 1.1× 886 2.6× 129 4.6k
B.A. Joyce United Kingdom 37 2.7k 0.9× 1.5k 0.5× 3.4k 1.5× 754 0.6× 317 0.9× 194 4.6k
Tetsuji Yasuda Japan 36 3.5k 1.1× 1.6k 0.6× 1.6k 0.7× 542 0.4× 168 0.5× 240 4.2k
H.‐J. Gossmann United States 37 3.7k 1.2× 1.3k 0.5× 2.3k 1.0× 381 0.3× 888 2.6× 127 4.8k
Inder P. Batra United States 37 1.6k 0.5× 1.5k 0.6× 3.1k 1.4× 395 0.3× 233 0.7× 122 4.1k
P. Soukiassian France 38 3.1k 1.0× 2.3k 0.8× 2.0k 0.9× 487 0.4× 291 0.8× 220 5.0k
Masakazu Ichikawa Japan 37 2.8k 0.9× 2.0k 0.7× 2.7k 1.2× 1.0k 0.8× 338 1.0× 259 4.8k
B-Y. Tsaur United States 41 3.1k 1.0× 1.5k 0.5× 2.4k 1.1× 642 0.5× 1.1k 3.3× 128 4.7k

Countries citing papers authored by J.‐M. Baribeau

Since Specialization
Citations

This map shows the geographic impact of J.‐M. Baribeau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.‐M. Baribeau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.‐M. Baribeau more than expected).

Fields of papers citing papers by J.‐M. Baribeau

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.‐M. Baribeau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.‐M. Baribeau. The network helps show where J.‐M. Baribeau may publish in the future.

Co-authorship network of co-authors of J.‐M. Baribeau

This figure shows the co-authorship network connecting the top 25 collaborators of J.‐M. Baribeau. A scholar is included among the top collaborators of J.‐M. Baribeau based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.‐M. Baribeau. J.‐M. Baribeau is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsybeskov, L., et al.. (2016). Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties. Solid State Communications. 245. 25–30. 1 indexed citations
2.
Wu, Xiaohua, M. Robertson, Masahiro Kawasaki, & J.‐M. Baribeau. (2012). Effects of small specimen tilt and probe convergence angle on ADF-STEM image contrast of Si0.8Ge0.2 epitaxial strained layers on (100) Si. Ultramicroscopy. 114. 46–55. 7 indexed citations
3.
Alberi, Kirstin, O. D. Dubón, W. Walukiewicz, et al.. (2008). Composition dependence of the hole mobility in GaSbxAs1−x. Applied Physics Letters. 92(16). 4 indexed citations
4.
Tang, H., S. Rolfe, F. Sèmond, J. A. Bardwell, & J.‐M. Baribeau. (2008). Mechanisms of ammonia—MBE growth of GaN on SiC for transport devices. Journal of Crystal Growth. 311(7). 2091–2095. 5 indexed citations
5.
Baribeau, J.‐M., X. Wu, N. L. Rowell, & D. J. Lockwood. (2006). Ge dots and nanostructures grown epitaxially on Si. Journal of Physics Condensed Matter. 18(8). R139–R174. 88 indexed citations
6.
Rowell, N. L., Li‐Lin Tay, D. J. Lockwood, et al.. (2006). Organic monolayers detected by single reflection attenuated total reflection infrared spectroscopy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 24(3). 668–672. 7 indexed citations
7.
Baribeau, J.‐M., Xiaohua Wu, D. J. Lockwood, Li‐Lin Tay, & G. I. Sproule. (2004). Low-temperature Si growth on Si (001): Impurity incorporation and limiting thickness for epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(3). 1479–1483. 13 indexed citations
8.
Xia, Hengchuan, W. N. Lennard, L. J. Huang, et al.. (1996). Sulphur diffusion at the Si/GaAs(110) interface. Journal of Applied Physics. 80(8). 4354–4357. 1 indexed citations
9.
McCaffrey, J. P. & J.‐M. Baribeau. (1995). A transmission electron microscope (TEM) calibration standard sample for all magnification, camera constant, and image/diffraction pattern rotation calibrations. Microscopy Research and Technique. 32(5). 449–454. 20 indexed citations
10.
Tyliszczak, T., A. P. Hitchcock, Zheng‐Hong Lu, J.‐M. Baribeau, & T. E. Jackman. (1994). X-Ray Absorption Studies of Strain in Epitaxial (Si-Ge) Atomic Layer Superlattice and Alloy Films. Scanning microscopy. 8(4). 5. 1 indexed citations
11.
Simpson, Todd W., David A. Love, D. Endisch, et al.. (1994). Amorphization Threshold in Si-Implanted Strained Sige Alloy Layers. MRS Proceedings. 373. 1 indexed citations
12.
Lockwood, D. J., et al.. (1993). Acoustic phonon peak splitting and satellite lines in Raman spectra of semiconductor superlattices. Applied Physics Letters. 62(3). 267–269. 8 indexed citations
13.
Lockwood, D. J., et al.. (1992). Precise measurements of the gap energy of folded acoustic phonons in Si/Si1xGexsuperlattices. Physical review. B, Condensed matter. 46(15). 9881–9884. 23 indexed citations
14.
Baribeau, J.‐M., D. J. Lockwood, T. E. Jackman, et al.. (1991). Characterization of ultrathin Ge epilayers on (100) Si. Canadian Journal of Physics. 69(3-4). 246–254. 14 indexed citations
15.
Baribeau, J.‐M. & S. Rolfe. (1991). Characterization of boron-doped silicon epitaxial layers by x-ray diffraction. Applied Physics Letters. 58(19). 2129–2131. 32 indexed citations
16.
Pickering, Christopher, D. C. Houghton, & J.‐M. Baribeau. (1990). Optical transitions in Si:Ge monolayer superlattices from derivative ellipsometry spectra. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1286. 165–165.
17.
Gant, T. A., D. J. Lockwood, J.‐M. Baribeau, & A. H. MacDonald. (1990). Raman scattering studies of phonons in quasiperiodic superlattices based on generalizations of the fibonacci sequence. Surface Science. 228(1-3). 135–138. 1 indexed citations
18.
Denhoff, M. W., J.‐M. Baribeau, D. C. Houghton, & Krishna Rajan. (1987). Electrical measurements on MBE grown Si/Si1−xGex heterojunctions. Journal of Crystal Growth. 81(1-4). 445–450. 11 indexed citations
19.
Baribeau, J.‐M., Jesús María Rincón López, & J. Bosse. (1985). Determination of the W(001) and W(110) surface potential barriers. Journal of Physics C Solid State Physics. 18(15). 3083–3097. 11 indexed citations
20.
Bosse, J., Jesús María Rincón López, J.‐M. Baribeau, & J.-D. Carette. (1984). A method for comparing measured and calculated VLEED fine structures. Surface Science. 137(1). 361–372. 8 indexed citations

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