J. Barbolla

2.6k total citations
132 papers, 2.1k citations indexed

About

J. Barbolla is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, J. Barbolla has authored 132 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 126 papers in Electrical and Electronic Engineering, 61 papers in Atomic and Molecular Physics, and Optics and 32 papers in Computational Mechanics. Recurrent topics in J. Barbolla's work include Silicon and Solar Cell Technologies (72 papers), Semiconductor materials and devices (66 papers) and Semiconductor materials and interfaces (53 papers). J. Barbolla is often cited by papers focused on Silicon and Solar Cell Technologies (72 papers), Semiconductor materials and devices (66 papers) and Semiconductor materials and interfaces (53 papers). J. Barbolla collaborates with scholars based in Spain, United States and Estonia. J. Barbolla's co-authors include Lourdes Pelaz, Luis A. Marqués, M. Jaraı́z, George H. Gilmer, S. Dueñas, Marı́a Aboy, L. Bailón, P. Castrillo, Helena Castán and Lourdes Enríquez and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. Barbolla

125 papers receiving 2.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Barbolla Spain 23 1.8k 709 537 536 273 132 2.1k
M. Servidori Italy 24 1.3k 0.7× 654 0.9× 399 0.7× 495 0.9× 201 0.7× 112 1.6k
F. Cristiano France 26 2.2k 1.2× 999 1.4× 590 1.1× 713 1.3× 353 1.3× 193 2.5k
H. Tanoue Japan 22 1.1k 0.6× 640 0.9× 241 0.4× 551 1.0× 227 0.8× 128 1.6k
S. R. Wilson United States 19 965 0.5× 357 0.5× 382 0.7× 409 0.8× 171 0.6× 92 1.4k
S. Solmi Italy 29 3.0k 1.7× 1.5k 2.2× 433 0.8× 870 1.6× 310 1.1× 137 3.3k
D. Fathy United States 17 1.1k 0.6× 371 0.5× 387 0.7× 489 0.9× 176 0.6× 48 1.4k
Masashi Uematsu Japan 24 1.6k 0.9× 743 1.0× 238 0.4× 841 1.6× 268 1.0× 130 1.9k
M. Tamura Japan 24 1.5k 0.8× 538 0.8× 463 0.9× 559 1.0× 195 0.7× 147 1.7k
Lourdes Pelaz Spain 22 1.8k 1.0× 732 1.0× 745 1.4× 542 1.0× 177 0.6× 132 2.1k
N. Cherkashin France 27 1.7k 0.9× 851 1.2× 337 0.6× 938 1.8× 442 1.6× 146 2.2k

Countries citing papers authored by J. Barbolla

Since Specialization
Citations

This map shows the geographic impact of J. Barbolla's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Barbolla with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Barbolla more than expected).

Fields of papers citing papers by J. Barbolla

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Barbolla. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Barbolla. The network helps show where J. Barbolla may publish in the future.

Co-authorship network of co-authors of J. Barbolla

This figure shows the co-authorship network connecting the top 25 collaborators of J. Barbolla. A scholar is included among the top collaborators of J. Barbolla based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Barbolla. J. Barbolla is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dueñas, S., Helena Castán, H. García, et al.. (2005). A comparative study of atomic layer deposited advanced high-k dielectrics. 29–32. 1 indexed citations
2.
López, Pedro, Lourdes Pelaz, Luis A. Marqués, et al.. (2005). Atomistic analysis of annealing behavior of amorphous regions. 56. 427–430. 1 indexed citations
3.
Marqués, Luis A., Lourdes Pelaz, Iván Santos, L. Bailón, & J. Barbolla. (2005). Study of the amorphous phase of silicon using molecular dynamics simulation techniques. 49. 405–408. 1 indexed citations
4.
Dueñas, S., Helena Castán, H. García, et al.. (2005). Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition. Microelectronics Reliability. 45(5-6). 949–952. 6 indexed citations
5.
Rubio, J.E., M. Jaraı́z, Ignacio Martin‐Bragado, et al.. (2005). Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations. Materials Science and Engineering B. 124-125. 392–396. 3 indexed citations
6.
Santos, Iván, Luis A. Marqués, Lourdes Pelaz, et al.. (2005). Molecular dynamics characterization of as-implanted damage in silicon. Materials Science and Engineering B. 124-125. 372–375. 13 indexed citations
7.
Marqués, Luis A., Lourdes Pelaz, P. Castrillo, & J. Barbolla. (2005). Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial. Physical Review B. 71(8). 46 indexed citations
8.
Marqués, Luis A., Lourdes Pelaz, Marı́a Aboy, Lourdes Enríquez, & J. Barbolla. (2003). Microscopic Description of the Irradiation-Induced Amorphization in Silicon. Physical Review Letters. 91(13). 135504–135504. 53 indexed citations
9.
Dueñas, S., Helena Castán, J. Barbolla, et al.. (2003). Conductance transient, capacitance–voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films. Solid-State Electronics. 47(10). 1623–1629. 18 indexed citations
10.
Aboy, Marı́a, Lourdes Pelaz, Luis A. Marqués, et al.. (2003). Atomistic modeling of B activation and deactivation for ultra-shallow junction formation. 92. 151–154.
11.
Pelaz, Lourdes, Luis A. Marqués, Marı́a Aboy, & J. Barbolla. (2003). Modeling of Dopant and Defect Interactions in Si Process Simulators. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 221-223. 31–40. 2 indexed citations
12.
Castán, Helena, et al.. (2001). C–V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N2 remote plasma cleaning of the InP surface. Journal of Materials Science Materials in Electronics. 12(4-6). 263–267. 4 indexed citations
13.
Castán, Helena, S. Dueñas, J. Barbolla, et al.. (2000). Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx:H/InP and Al/SiNx:H/In0.53Ga0.47As structures by DLTS and conductance transient techniques. Microelectronics Reliability. 40(4-5). 845–848. 21 indexed citations
14.
Pelaz, Lourdes, George H. Gilmer, V. C. Venezia, et al.. (1999). Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion. Applied Physics Letters. 74(14). 2017–2019. 34 indexed citations
15.
Peláez, Ramón J., Helena Castán, S. Dueñas, et al.. (1999). Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx:H/InP metal–insulator–semiconductor structures fabrication. Journal of Applied Physics. 86(12). 6924–6930. 7 indexed citations
16.
Jaraı́z, M., Lourdes Pelaz, J. Barbolla, et al.. (1998). Atomistic Modeling of Point and Extended Defects in Crystalline Materials. MRS Proceedings. 532. 54 indexed citations
17.
Rubio, J.E., Luis A. Marqués, Lourdes Pelaz, M. Jaraı́z, & J. Barbolla. (1996). Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 112(1-4). 156–159. 7 indexed citations
18.
Marqués, Luis A., J.E. Rubio, M. Jaraı́z, Lourdes Enríquez, & J. Barbolla. (1995). An improved molecular dynamics scheme for ion bombardment simulations. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 102(1-4). 7–11. 19 indexed citations
19.
Arias, J., M. Jaraı́z, Lourdes Pelaz, L. Bailón, & J. Barbolla. (1995). Low energy ion implantation simulation using a modified binary collision approximation code. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 102(1-4). 228–231. 4 indexed citations
20.
Rubio, J.E., Luis A. Marqués, M. Jaraı́z, L. Bailón, & J. Barbolla. (1995). Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 102(1-4). 301–304. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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