J. Barbolla

2.6k citations

132 papers · 2.1k indexed · h-index 23

Impact in

Electrical and Electronic Engineering top 2%
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
Computational Mechanics top 2%
- Ion-surface interactions and analysis

Papers in ⓘ

Electrical and Electronic Engineering 126
- Silicon and Solar Cell Technologies 72
- Semiconductor materials and devices 66
- Integrated Circuits and Semiconductor Failure Analysis 39
- Advancements in Semiconductor Devices and Circuit Design 20
- Thin-Film Transistor Technologies 14
Atomic and Molecular Physics, and Optics 61
- Semiconductor materials and interfaces 53
- Semiconductor Quantum Structures and Devices 10

Co-authors: Lourdes Pelaz (46 shared papers)Luis A. Marqués (37 shared papers)M. Jaraı́z (39 shared papers)George H. Gilmer (14 shared papers)S. Dueñas (36 shared papers)Marı́a Aboy (24 shared papers)L. Bailón (29 shared papers)P. Castrillo (19 shared papers)
Journals: Journal of Applied Physics (23 papers)Materials Science and Engineering B (12 papers)Applied Physics Letters (12 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (12 papers)Solid-State Electronics (10 papers)
Partner nations: Spain United States Estonia

In The Last Decade

J. Barbolla

125 papers receiving 2.0k citations

Peers

Countries citing papers authored by J. Barbolla

Since Specialization

Citations

This map shows the geographic impact of J. Barbolla's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Barbolla with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Barbolla more than expected).

Fields of papers citing papers by J. Barbolla

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Barbolla. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Barbolla. The network helps show where J. Barbolla may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Barbolla, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Barbolla Line = papers co-authored together J. Barbolla links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 132 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Ion-beam-induced amorphization and recrystallization in silicon Journal of Applied Physics ·Lourdes Pelaz, Luis A. Marqués, J. Barbolla	2004	285
2	B cluster formation and dissolution in Si: A scenario based on atomistic modeling Applied Physics Letters ·Lourdes Pelaz, George H. Gilmer, H.-J. Gossmann, C.S. Rafferty, M. Jaraı́z, J. Barbolla	1999	123
3	Stability of defects in crystalline silicon and their role in amorphization Physical review. B, Condensed matter ·Luis A. Marqués, Lourdes Pelaz, Jesús Hernández, J. Barbolla, George H. Gilmer	2001	93
4	Carbon in silicon: Modeling of diffusion and clustering mechanisms Journal of Applied Physics ·R. Pinacho, P. Castrillo, M. Jaraı́z, Ignacio Martin‐Bragado, J. Barbolla, H.‐J. Gossmann, George H. Gilmer, J. L. Benton	2002	71
5	Atomistic modeling of amorphization and recrystallization in silicon Applied Physics Letters ·Lourdes Pelaz, Luis A. Marqués, Marı́a Aboy, J. Barbolla, George H. Gilmer	2003	67
6	A 32-mW 320-MHz Continuous-Time Complex Delta-Sigma ADC for Multi-Mode Wireless-LAN Receivers IEEE Journal of Solid-State Circuits ·J. Arias, P. Kiss, Vladimir Prodanov, V. Boccuzzi, M. Banu, D. Bisbal, J. SanPablo, L. Quintanilla, J. Barbolla	2006	67
7	Admittance spectroscopy in junctions Solid-State Electronics ·J. Barbolla, S. Dueñas, L. Bailón	1992	63
8	Atomistic Modeling of Point and Extended Defects in Crystalline Materials MRS Proceedings ·M. Jaraı́z, Lourdes Pelaz, E. Rubio, J. Barbolla, George H. Gilmer, D. J. Eaglesham, Hans Gossmann, J. M. Poate	1998	54
9	Microscopic Description of the Irradiation-Induced Amorphization in Silicon Physical Review Letters ·Luis A. Marqués, Lourdes Pelaz, Marı́a Aboy, Lourdes Enríquez, J. Barbolla	2003	53
10	Activation and deactivation of implanted B in Si Applied Physics Letters ·Lourdes Pelaz, V. C. Venezia, H.-J. Gossmann, George H. Gilmer, A. T. Fiory, C.S. Rafferty, M. Jaraı́z, J. Barbolla	1999	51
11	Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial Physical Review B ·Luis A. Marqués, Lourdes Pelaz, P. Castrillo, J. Barbolla	2005	46
12	Low-power pipeline ADC for wireless LANs IEEE Journal of Solid-State Circuits ·J. Arias, V. Boccuzzi, L. Quintanilla, Lourdes Enríquez, D. Bisbal, M. Banu, J. Barbolla	2004	43
13	Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+1” model Applied Physics Letters ·Lourdes Pelaz, George H. Gilmer, M. Jaraı́z, S. B. Herner, H.-J. Gossmann, D. J. Eaglesham, G. Hobler, C.S. Rafferty, J. Barbolla	1998	42
14	Improved binary collision approximation ion implant simulators Journal of Applied Physics ·J.M. Hernández-Mangas, J. Arias, L. Bailón, M. Jaraı́z, J. Barbolla	2002	39
15	Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion Applied Physics Letters ·Lourdes Pelaz, George H. Gilmer, V. C. Venezia, H.‐J. Gossmann, M. Jaraı́z, J. Barbolla	1999	34
16	Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures Applied Physics Letters ·S. Dueñas, Ramón J. Peláez, Helena Castán, R. Pinacho, L. Quintanilla, J. Barbolla, I. Mártil, G. González-Dı́az	1997	34
17	Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles Applied Physics Letters ·Marı́a Aboy, Lourdes Pelaz, Luis A. Marqués, J. Barbolla, Ali Mokhberi, Yuzuru Takamura, Peter B. Griffin, J.D. Plummer	2003	30
18	Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon Journal of Applied Physics ·Marı́a Aboy, Lourdes Pelaz, Luis A. Marqués, Pedro López, J. Barbolla, Ray Duffy	2005	29
19	Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach Applied Physics Letters ·R. Pinacho, M. Jaraı́z, P. Castrillo, Ignacio Martin‐Bragado, J.E. Rubio, J. Barbolla	2005	28
20	The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO₂ on p- and n-type silicon Semiconductor Science and Technology ·S. Dueñas, Helena Castán, H. García, J. Barbolla, Kaupo Kukli, Jaan Aarik, Aleks Aidla	2004	27

About J. Barbolla

J. Barbolla is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computational Mechanics, Surfaces, Coatings and Films and Ceramics and Composites, having authored 132 papers that have together received 2.1k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (72 papers), Semiconductor materials and devices (66 papers), Semiconductor materials and interfaces (53 papers), Integrated Circuits and Semiconductor Failure Analysis (39 papers), Ion-surface interactions and analysis (30 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Thin-Film Transistor Technologies (14 papers) and Semiconductor Quantum Structures and Devices (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.8k citations), Computational Mechanics (537 citations), Atomic and Molecular Physics, and Optics (709 citations), Structural Biology (23 citations) and Materials Chemistry (536 citations). J. Barbolla has collaborated with scholars based in Spain, United States and Estonia. Frequent co-authors include Lourdes Pelaz, Luis A. Marqués, M. Jaraı́z, George H. Gilmer, S. Dueñas, Marı́a Aboy, L. Bailón, P. Castrillo, Helena Castán and Lourdes Enríquez. Their work appears in journals such as Journal of Applied Physics, Materials Science and Engineering B, Applied Physics Letters, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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