V. Ranki

1.2k citations

20 papers · 1.1k indexed · h-index 13

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 9
- GaN-based semiconductor devices and materials 8
Mechanics of Materials 12
- Muon and positron interactions and applications 11

Co-authors: K. Saarinen D. C. Look Filip Tuomisto J. Oila M. J. Puska Jani Kivioja Ilja Makkonen J. Nissilä
Journals: Physica B Condensed Matter (4 papers)Physical Review Letters (4 papers)Physical Review B (3 papers)Applied Physics Letters (2 papers)Physical review. B, Condensed matter (2 papers)
Partner nations: Finland United States Poland

In The Last Decade

V. Ranki

20 papers receiving 1.0k citations

Peers

Countries citing papers authored by V. Ranki

Since Specialization

Citations

This map shows the geographic impact of V. Ranki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Ranki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Ranki more than expected).

Fields of papers citing papers by V. Ranki

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Ranki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Ranki. The network helps show where V. Ranki may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. Ranki, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Ranki Line = papers co-authored together V. Ranki links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN Physical Review B ·Filip Tuomisto, V. Ranki, D. C. Look, G. C. Farlow	2007	64
2	Positron trapping at thermal vacancies in highly As-doped Si Physica B Condensed Matter ·LUCIANO LUIZ ALT, V. Ranki, K. Saarinen	2006	2
3	Gallium and nitrogen vacancies in GaN: Impurity decoration effects Physica B Condensed Matter ·S. Hautakangas, V. Ranki, Ilja Makkonen, M. J. Puska, K. Saarinen, L. Liszkay, D. Seghier, H. P. Gíslason, Jaime A. Freitas, R.L. Henry, Xin Xu, D. C. Look	2006	19
4	Dissociation of V_Ga–O_N complexes in HVPE GaN by high pressure and high temperature annealing physica status solidi (b) ·Filip Tuomisto, S. Hautakangas, Ilja Makkonen, V. Ranki, M. J. Puska, K. Saarinen, Michał Boćkowski, T. Suski, T. Paskova, B. Ḿonemar, X XU, D. C. Look	2006	8
5	Direct evidence of impurity decoration of Ga vacancies inGaNfrom positron annihilation spectroscopy Physical Review B ·S. Hautakangas, Ilja Makkonen, V. Ranki, M. J. Puska, K. Saarinen, Xin Xu, D. C. Look	2006	85
6	Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy Physical Review Letters ·Antonio Millastre Benito, Ilja Makkonen, V. Ranki, M. J. Puska, K. Saarinen, H.‐J. Gossmann	2005	33
7	Vacancies in highly doped silicon studied by positron annihilation spectroscopy Aaltodoc (Aalto University) ·V. Ranki	2005	1
8	Formation of Thermal Vacancies in Highly As and P Doped Si Physical Review Letters ·V. Ranki, K. Saarinen	2004	43
9	Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si Physical Review B ·V. Ranki, A. Urrea Romera, K. Saarinen	2004	39
10	Evidence of the Zn Vacancy Acting as the Dominant Acceptor inn-Type ZnO Physical Review Letters ·Filip Tuomisto, V. Ranki, K. Saarinen, D. C. Look	2003	413
11	Identification of vacancy complexes in Si by positron annihilation Journal of Physics Condensed Matter ·K. Saarinen, V. Ranki	2003	4
12	Electrical deactivation by vacancy-impurity complexes in highly As-doped Si Physical review. B, Condensed matter ·V. Ranki, K. Saarinen, Jacob Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen	2003	29
13	Formation of vacancy-impurity complexes in highly As- and P-doped Si Physica B Condensed Matter ·V. Ranki, K. Saarinen	2003	5
14	Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy Applied Physics Letters ·J. Oila, Jani Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, Jeong-Yeol Han	2003	103
15	Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82, 3433 (2003)] Applied Physics Letters ·J. Oila, Jani Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, Jeong-Yeol Han	2003	2
16	Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si Physical Review Letters ·V. Ranki, J. Nissilä, K. Saarinen	2002	46
17	Target chamber for a slow positron beam: optimization of count rate and minimization of backscattering effects Applied Surface Science ·J. Oila, V. Ranki, Jani Kivioja, K. Saarinen, P. Hautojärvi	2002	8
18	Vacancies as compensating centers in bulk GaN: doping effects Journal of Crystal Growth ·K. Saarinen, V. Ranki, T. Suski, Michał Boćkowski, I. Grzegory	2002	23
19	Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers Physical review. B, Condensed matter ·J. Oila, V. Ranki, Jani Kivioja, K. Saarinen, P. Hautojärvi, J. Likonen, Jacek Baranowski, K. Pakuła, T. Suski, M. Leszczyński, I. Grzegory	2001	101
20	Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals Physica B Condensed Matter ·K. Saarinen, J. Nissilä, J. Oila, V. Ranki, Mikko Hakala, M. J. Puska, P. Hautojärvi, J. Likonen, T. Suski, I. Grzegory, B. Łucznik, S. Porowski	1999	23

About V. Ranki

V. Ranki is a scholar working on Condensed Matter Physics, Mechanics of Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 20 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (13 papers), Muon and positron interactions and applications (11 papers), GaN-based semiconductor devices and materials (8 papers), Silicon and Solar Cell Technologies (7 papers), Semiconductor materials and interfaces (6 papers), Ga2O3 and related materials (2 papers), ZnO doping and properties (2 papers) and Silicon Nanostructures and Photoluminescence (2 papers). The work is most often cited by research in Condensed Matter Physics (369 citations), Electronic, Optical and Magnetic Materials (368 citations), Materials Chemistry (679 citations), Mechanics of Materials (302 citations) and Electrical and Electronic Engineering (659 citations). V. Ranki has collaborated with scholars based in Finland, United States and Poland. Frequent co-authors include K. Saarinen, D. C. Look, Filip Tuomisto, J. Oila, M. J. Puska, Jani Kivioja, Ilja Makkonen, J. Nissilä, G. C. Farlow and I. Grzegory. Their work appears in journals such as Physica B Condensed Matter, Physical Review Letters, Physical Review B, Applied Physics Letters and Physical review. B, Condensed matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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