S. B. Herner

752 total citations
34 papers, 574 citations indexed

About

S. B. Herner is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. B. Herner has authored 34 papers receiving a total of 574 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in S. B. Herner's work include Semiconductor materials and interfaces (22 papers), Silicon and Solar Cell Technologies (17 papers) and Semiconductor materials and devices (14 papers). S. B. Herner is often cited by papers focused on Semiconductor materials and interfaces (22 papers), Silicon and Solar Cell Technologies (17 papers) and Semiconductor materials and devices (14 papers). S. B. Herner collaborates with scholars based in United States, Germany and Spain. S. B. Herner's co-authors include V. V. Varadan, Vijay K. Varadan, H.‐J. Gossmann, D. J. Eaglesham, Aditya Agarwal, T. E. Haynes, Lourdes Pelaz, K. S. Jones, Garret Moddel and Ayendra Weerakkody and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

S. B. Herner

33 papers receiving 551 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. B. Herner United States	14	526	159	153	93	73	34	574
R. Carin France	13	470 0.9×	115 0.7×	103 0.7×	50 0.5×	43 0.6×	44	545
Shin‐ichiro Uekusa Japan	13	473 0.9×	293 1.8×	264 1.7×	70 0.8×	94 1.3×	90	598
T. Akatsu France	14	453 0.9×	131 0.8×	167 1.1×	61 0.7×	119 1.6×	20	522
Oleg Kononchuk France	13	401 0.8×	126 0.8×	145 0.9×	111 1.2×	68 0.9×	75	490
Akio Shima Japan	15	715 1.4×	103 0.6×	109 0.7×	44 0.5×	39 0.5×	92	763
John Borland United States	9	372 0.7×	146 0.9×	99 0.6×	123 1.3×	68 0.9×	70	490
Jianghong Yao China	15	311 0.6×	239 1.5×	217 1.4×	193 2.1×	182 2.5×	35	547
M. Italia Italy	12	430 0.8×	133 0.8×	124 0.8×	118 1.3×	135 1.8×	36	499
N. Konishi Japan	15	760 1.4×	379 2.4×	73 0.5×	54 0.6×	141 1.9×	56	834
Benjamin Griffiths United Kingdom	7	157 0.3×	183 1.2×	68 0.4×	47 0.5×	63 0.9×	13	309

Countries citing papers authored by S. B. Herner

Since Specialization

Citations

This map shows the geographic impact of S. B. Herner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. B. Herner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. B. Herner more than expected).

Fields of papers citing papers by S. B. Herner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. B. Herner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. B. Herner. The network helps show where S. B. Herner may publish in the future.

Co-authorship network of co-authors of S. B. Herner

This figure shows the co-authorship network connecting the top 25 collaborators of S. B. Herner. A scholar is included among the top collaborators of S. B. Herner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. B. Herner. S. B. Herner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Herner, S. B., et al.. (2017). High performance MIIM diode based on cobalt oxide/titanium oxide. Applied Physics Letters. 110(22). 32 indexed citations

Herner, S. B.. (2006). Low Temperature Deposition and Crystallization of Large-Grained Ge Films on TiN. Electrochemical and Solid-State Letters. 9(5). G161–G161. 1 indexed citations

Herner, S. B., et al.. (2005). Leakage currents of SiO2 films grown on CoSi2 lines and disks. Applied Physics Letters. 86(19). 1 indexed citations

Herner, S. B., et al.. (2005). Effect of Ohmic Contacts on Polysilicon Memory Effect. MRS Proceedings. 864. 1 indexed citations

Herner, S. B., et al.. (2004). Vertical p–i–n Polysilicon Diode With Antifuse for Stackable Field-Programmable ROM. IEEE Electron Device Letters. 25(5). 271–273. 31 indexed citations

Walker, Andrew J., et al.. (2004). 3D TFT-SONOS memory cell for ultra-high density file storage applications. 29–30. 37 indexed citations

Herner, S. B., et al.. (2004). Low Resistivity p[sup +] Polycrystalline Silicon Deposition at Low Temperatures with SiH[sub 4]/BCl[sub 3]. Electrochemical and Solid-State Letters. 7(5). G108–G108. 4 indexed citations

Herner, S. B., et al.. (2002). Low resistivity TiSi2 on narrow p+ polycrystalline silicon lines. Applied Physics Letters. 81(2). 259–261. 2 indexed citations

Agarwal, Aditya, D. J. Eaglesham, H.‐J. Gossmann, et al.. (2002). Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions. 467–470. 18 indexed citations

10.

Herner, S. B., Hongmei Zhang, Y. Tanaka, et al.. (2000). Fluorine Barrier Properties of Bias-Sputtered Tungsten Films. Journal of The Electrochemical Society. 147(5). 1936–1936. 1 indexed citations

11.

Herner, S. B.. (1999). Ultrashallow Junctions in Silicon Using Single-Crystal CoSi[sub 2] as a Dopant Source. Electrochemical and Solid-State Letters. 1(3). 150–150. 2 indexed citations

12.

Raman, R., Mark E. Law, V. Krishnamoorthy, K. S. Jones, & S. B. Herner. (1999). Effect of surface proximity on end-of-range loop dissolution in silicon. Applied Physics Letters. 74(11). 1591–1593. 17 indexed citations

13.

Herner, S. B., H.-J. Gossmann, Lourdes Pelaz, et al.. (1998). Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model. Journal of Applied Physics. 83(11). 6182–6184. 13 indexed citations

14.

Agarwal, Aditya, H.‐J. Gossmann, D. J. Eaglesham, et al.. (1998). Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon. Materials Science in Semiconductor Processing. 1(1). 17–25. 44 indexed citations

15.

Herner, S. B., K. S. Jones, H.‐J. Gossmann, et al.. (1997). Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film. Journal of Applied Physics. 82(2). 583–588. 3 indexed citations

16.

Herner, S. B., V. Krishnamoorthy, A. Naman, et al.. (1997). Morphology of TiSi2 films on Si formed from co-deposited Ti and Si. Thin Solid Films. 302(1-2). 127–132. 3 indexed citations

17.

Herner, S. B., et al.. (1997). Extrinsic dislocation loop behavior in silicon with a thermally grown silicon nitride film. Journal of Applied Physics. 81(11). 7175–7180. 10 indexed citations

18.

Herner, S. B., K. S. Jones, H.‐J. Gossmann, et al.. (1996). The influence of TiSi2 and CoSi2 growth on Si native point defects: The role of the diffusing species. Applied Physics Letters. 68(20). 2870–2872. 6 indexed citations

19.

Herner, S. B., et al.. (1996). Surface roughness-induced artifacts in secondary ion mass spectrometry depth profiling and a simple technique to smooth the surface. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(6). 3593–3595. 17 indexed citations

20.

Herner, S. B., V. Krishnamoorthy, & K. S. Jones. (1996). Point defect-dislocation loop behavior in Si with a TiSi2 film. Applied Surface Science. 103(4). 377–382. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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