A. Nouailhat

1.2k total citations
90 papers, 950 citations indexed

About

A. Nouailhat is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, A. Nouailhat has authored 90 papers receiving a total of 950 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Atomic and Molecular Physics, and Optics, 54 papers in Electrical and Electronic Engineering and 25 papers in Materials Chemistry. Recurrent topics in A. Nouailhat's work include Semiconductor Quantum Structures and Devices (33 papers), Semiconductor materials and devices (29 papers) and Semiconductor materials and interfaces (19 papers). A. Nouailhat is often cited by papers focused on Semiconductor Quantum Structures and Devices (33 papers), Semiconductor materials and devices (29 papers) and Semiconductor materials and interfaces (19 papers). A. Nouailhat collaborates with scholars based in France, Switzerland and Algeria. A. Nouailhat's co-authors include G. Guillot, G. Brémond, S. Loualiche, A. Chantre, M. Lannoo, B. Cockayne, G. Vincent, Michel A. Aegerter, Jean-Paul Pellaux and B. Deveaud and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Nouailhat

86 papers receiving 874 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Nouailhat France 17 662 602 241 83 56 90 950
R. R. Daniels United States 17 609 0.9× 527 0.9× 203 0.8× 67 0.8× 54 1.0× 51 834
A. M. Huber France 12 634 1.0× 554 0.9× 168 0.7× 75 0.9× 60 1.1× 34 834
P. Fṙanzosi Italy 13 478 0.7× 488 0.8× 221 0.9× 49 0.6× 56 1.0× 92 701
W. Czaja Switzerland 15 399 0.6× 321 0.5× 315 1.3× 43 0.5× 55 1.0× 47 622
M. Kleverman Sweden 16 579 0.9× 494 0.8× 371 1.5× 76 0.9× 102 1.8× 66 838
H. G. Grimmeiss Sweden 19 882 1.3× 771 1.3× 374 1.6× 83 1.0× 29 0.5× 45 1.1k
H. Asonen Finland 18 504 0.8× 666 1.1× 148 0.6× 59 0.7× 55 1.0× 75 838
B.I. Craig Australia 15 327 0.5× 394 0.7× 252 1.0× 32 0.4× 44 0.8× 42 637
J. Weber Germany 19 842 1.3× 681 1.1× 615 2.6× 69 0.8× 67 1.2× 52 1.2k
E. Molva France 20 1.1k 1.6× 706 1.2× 566 2.3× 72 0.9× 33 0.6× 61 1.2k

Countries citing papers authored by A. Nouailhat

Since Specialization
Citations

This map shows the geographic impact of A. Nouailhat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Nouailhat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Nouailhat more than expected).

Fields of papers citing papers by A. Nouailhat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Nouailhat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Nouailhat. The network helps show where A. Nouailhat may publish in the future.

Co-authorship network of co-authors of A. Nouailhat

This figure shows the co-authorship network connecting the top 25 collaborators of A. Nouailhat. A scholar is included among the top collaborators of A. Nouailhat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Nouailhat. A. Nouailhat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Balestra, F., G. Ghibaudo, J. Brini, et al.. (1994). Low Frequency Noise in the Base Current of Polysilicon Emitter BJT's after Hot-Carrier Stress. European Solid-State Device Research Conference. 60(4). 429–432. 3 indexed citations
2.
Balestra, F., J. Brini, G. Ghibaudo, et al.. (1993). Low-Frequency Noise Sources in Polysilicon Emiter Bipolar Transistors: Influence of Hot-Electron-Induced Degradation and Post-Stress Recovery. European Solid-State Device Research Conference. 107–110. 2 indexed citations
3.
Nouailhat, A., et al.. (1992). Performance evaluation of CMOS compatible bipolar transistors and vertical junction FETs for advanced VLSI technology. Electronics Letters. 28(23). 2195–2196. 1 indexed citations
4.
Nouailhat, A., et al.. (1991). New Evaluation Method of the Influence of the Interfacial Oxide Layer on the Gain of Polycrystalline Silicon Emitter Bipolar Transistors. 2. 306–309. 1 indexed citations
5.
Giroult-Matlakowski, G., et al.. (1990). Influence of the interfacial oxide layer on the gain of polycrystalline silicon emitter bipolar transistors processed in VLSI BiCMOS technology. Electronics Letters. 26(14). 1002–1004. 3 indexed citations
6.
Chantre, A., et al.. (1989). Physical Analysis of Peripheral Base Currents in an Advanced Polysilicon Self-aligned Bipolar Tranisistor Structure. European Solid-State Device Research Conference. 469–472. 1 indexed citations
7.
Chantre, A., et al.. (1989). IDENTIFICATION AND CONTROL OF PERIPHERAL BASE CURRENTS IN ADVANCED SELF-ALIGNED POLYCIDE-EMITTER BIPOLAR TRANSISTORS. 1. 36–39. 2 indexed citations
8.
Brémond, G., et al.. (1989). Identification of the acceptor level V3+/2+ in GaAs and a new experimental observation of V2 in “low spin” ground state in GaAs. Journal of Electronic Materials. 18(3). 391–397. 4 indexed citations
9.
Marrakchi, G., D. Barbier, G. Guillot, & A. Nouailhat. (1987). A deep level transient spectroscopy study of electron traps in n-type GaAs after pulsed electron beam irradiation. Journal of Applied Physics. 62(7). 2742–2745. 2 indexed citations
10.
Brémond, G., G. Guillot, A. Nouailhat, et al.. (1986). Properties of titanium in InP. Journal of Physics C Solid State Physics. 19(24). 4723–4728. 12 indexed citations
11.
Pelloie, J.L., et al.. (1986). A study of deep levels by transient spectroscopy on p-type liquid-phase-epitaxial GaxIn1−xAsyP1−y grown on semi-insulating InP. Journal of Applied Physics. 59(5). 1536–1543. 13 indexed citations
12.
Nouailhat, A., et al.. (1984). Deep levels related to Co in InP. Journal of Applied Physics. 55(2). 395–401. 10 indexed citations
13.
Loualiche, S., A. Nouailhat, G. Guillot, & M. Lannoo. (1984). Interpretation of deep-level optical spectroscopy and deep-level transient spectroscopy data: Application to irradiation defects in GaAs. Physical review. B, Condensed matter. 30(10). 5822–5834. 51 indexed citations
14.
Vincent, G., et al.. (1982). Quenching effect of luminescence in bulk semi-insulating GaAs. Solid State Communications. 42(1). 67–69. 52 indexed citations
15.
Loualiche, S., G. Guillot, A. Nouailhat, & J. C. Bourgoin. (1982). Defect identification in electron-irradiated GaAs. Physical review. B, Condensed matter. 26(12). 7090–7092. 26 indexed citations
16.
Nouailhat, A., et al.. (1982). Detailed optical characterization of the deep cr level in gaas. Journal de physique. 43(5). 815–825. 19 indexed citations
17.
Nouailhat, A., et al.. (1981). The Free Exciton in KI. II. Coexistence with the Self Trapped Exciton. Journal of the Physical Society of Japan. 50(1). 127–128. 13 indexed citations
18.
Nouailhat, A.. (1978). Electric field effect on the mechanisms of recombination in KI doped with divalent ions. Journal of Luminescence. 17(2). 185–199. 2 indexed citations
19.
Guillot, G., et al.. (1976). Influence of the interstitials on the excitonic luminescence of KI. Journal of Luminescence. 12-13. 327–332. 11 indexed citations
20.
Pellaux, Jean-Paul, et al.. (1973). Study of Vκ centers in CsI crystal. Solid State Communications. 13(4). 479–482. 48 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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