Ki‐Sik Im

1.4k total citations
69 papers, 1.1k citations indexed

About

Ki‐Sik Im is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ki‐Sik Im has authored 69 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Condensed Matter Physics, 57 papers in Electrical and Electronic Engineering and 21 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ki‐Sik Im's work include GaN-based semiconductor devices and materials (62 papers), Semiconductor materials and devices (39 papers) and Advancements in Semiconductor Devices and Circuit Design (31 papers). Ki‐Sik Im is often cited by papers focused on GaN-based semiconductor devices and materials (62 papers), Semiconductor materials and devices (39 papers) and Advancements in Semiconductor Devices and Circuit Design (31 papers). Ki‐Sik Im collaborates with scholars based in South Korea, France and Austria. Ki‐Sik Im's co-authors include Jung‐Hee Lee, S. Cristoloveanu, Dong‐Seok Kim, Young‐Woo Jo, Ki-Won Kim, Jong‐Bong Ha, Jae‐Hoon Lee, Chul‐Ho Won, Hee‐Sung Kang and Jaehoon Lee and has published in prestigious journals such as Applied Physics Letters, IEEE Access and IEEE Transactions on Electron Devices.

In The Last Decade

Ki‐Sik Im

66 papers receiving 1.1k citations

Peers

Ki‐Sik Im

CMP

EEE

EOMM

AMPO

R. Stoklas Slovakia

Minhan Mi China

Takuma Nanjo Japan

Brian L. Swenson United States

Yoshinobu Narita Japan

Yaozong Zhong China

Yunyou Lu Hong Kong

Cory Lund United States

A.P. Zhang United States

J.W. Chung United States

R. Stoklas Slovakia

Ki‐Sik Im

725 ×0.8

CMP

710 ×0.8

EEE

426 ×1.0

EOMM

231 ×1.1

175 ×1.3

AMPO

Citations per year, relative to Ki‐Sik Im Ki‐Sik Im (= 1×) peers R. Stoklas

Countries citing papers authored by Ki‐Sik Im

Since Specialization

Citations

This map shows the geographic impact of Ki‐Sik Im's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ki‐Sik Im with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ki‐Sik Im more than expected).

Fields of papers citing papers by Ki‐Sik Im

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ki‐Sik Im. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ki‐Sik Im. The network helps show where Ki‐Sik Im may publish in the future.

Co-authorship network of co-authors of Ki‐Sik Im

This figure shows the co-authorship network connecting the top 25 collaborators of Ki‐Sik Im. A scholar is included among the top collaborators of Ki‐Sik Im based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ki‐Sik Im. Ki‐Sik Im is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Im, Ki‐Sik, Minho Kim, & Okhyun Nam. (2024). Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer. physica status solidi (a). 221(21). 1 indexed citations

Im, Ki‐Sik. (2023). Impact of Fin Width on Low-Frequency Noise in AlGaN/GaN FinFETs: Evidence for Bulk Conduction. IEEE Access. 11. 10384–10389. 6 indexed citations

Im, Ki‐Sik, Minho Kim, Jin-Seok Choi, et al.. (2022). On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer. Applied Physics Letters. 120(1). 6 indexed citations

Im, Ki‐Sik, et al.. (2022). Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors. Materials. 15(21). 7475–7475. 5 indexed citations

Im, Ki‐Sik, Sung Jin An, Christoforos Theodorou, et al.. (2020). Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs. IEEE Electron Device Letters. 41(6). 832–835. 19 indexed citations

Im, Ki‐Sik. (2020). Mobility Fluctuations in a Normally-Off GaN MOSFET Using Tetramethylammonium Hydroxide Wet Etching. IEEE Electron Device Letters. 42(1). 18–21. 8 indexed citations

Im, Ki‐Sik, M. Siva Pratap Reddy, Christoforos Theodorou, et al.. (2019). Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel. IEEE Transactions on Electron Devices. 66(3). 1243–1248. 18 indexed citations

Lee, J.‐H., et al.. (2019). Low voltage operation of GaN vertical nanowire MOSFET. Solid-State Electronics. 155. 76–81. 1 indexed citations

Im, Ki‐Sik, Jin-Seok Choi, Young-Min Hwang, et al.. (2019). 1/f noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer. Microelectronic Engineering. 215. 110985–110985. 13 indexed citations

10.

Lee, Jae‐Hoon, Ki‐Sik Im, Jong Kyu Kim, & Jung‐Hee Lee. (2018). Performance of Recessed Anode AlGaN/GaN Schottky Barrier Diode Passivated With High-Temperature Atomic Layer-Deposited Al₂O₃ Layer. IEEE Transactions on Electron Devices. 66(1). 324–329. 13 indexed citations

11.

Xu, Yue, S. Cristoloveanu, Maryline Bawedin, Ki‐Sik Im, & Jung‐Hee Lee. (2018). Performance Improvement and Sub-60 mV/Decade Swing in AlGaN/GaN FinFETs by Simultaneous Activation of 2DEG and Sidewall MOS Channels. IEEE Transactions on Electron Devices. 65(3). 915–920. 15 indexed citations

12.

Seo, Jae Hwa, Young Jun Yoon, Dong-Hyeok Son, et al.. (2018). A Novel Analysis of ${L}_{\text{gd}}$ Dependent-1/${f}$ Noise in In_0.08Al_0.92N/GaN. IEEE Electron Device Letters. 39(10). 1552–1555. 3 indexed citations

13.

Reddy, M. Siva Pratap, Won-Sang Park, Ki‐Sik Im, & Jung‐Hee Lee. (2018). Dual-Surface Modification of AlGaN/GaN HEMTs Using TMAH and Piranha Solutions for Enhancing Current and 1/f-Noise Characteristics. IEEE Journal of the Electron Devices Society. 6. 791–796. 12 indexed citations

14.

Im, Ki‐Sik, et al.. (2018). Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs. IEEE Journal of the Electron Devices Society. 6. 354–359. 6 indexed citations

15.

Theodorou, Christoforos, et al.. (2017). Comparison for 1/ ${f}$ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET. IEEE Transactions on Electron Devices. 64(9). 3634–3638. 32 indexed citations

16.

Grill, Alexander, Bernhard Stampfer, Michael Waltl, et al.. (2017). Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs. 3B–5.1. 11 indexed citations

17.

Kang, In Man, In-Tak Cho, Jong‐Ho Lee, et al.. (2016). 1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs. IEEE Electron Device Letters. 38(2). 252–254. 24 indexed citations

18.

Im, Ki‐Sik, et al.. (2016). Performance enhancement of AlGaN/GaN nanochannel omega-FinFET. Solid-State Electronics. 129. 196–199. 3 indexed citations

19.

Kim, Dong‐Seok, Tae‐Hyeon Kim, Chul‐Ho Won, et al.. (2011). Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method. Microelectronic Engineering. 88(7). 1221–1224. 6 indexed citations

20.

Kim, Dong‐Seok, Jong‐Bong Ha, Hee‐Sung Kang, et al.. (2010). Normally-off operation of Al 2 O 3 /GaN MOSFET based on AlGaN/GaN heterostructure with p-GaN buffer layer. 229–231. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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