B. Neinhüs

417 total citations
22 papers, 275 citations indexed

About

B. Neinhüs is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, B. Neinhüs has authored 22 papers receiving a total of 275 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 1 paper in Materials Chemistry. Recurrent topics in B. Neinhüs's work include Advancements in Semiconductor Devices and Circuit Design (19 papers), Semiconductor materials and devices (12 papers) and Radio Frequency Integrated Circuit Design (9 papers). B. Neinhüs is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (19 papers), Semiconductor materials and devices (12 papers) and Radio Frequency Integrated Circuit Design (9 papers). B. Neinhüs collaborates with scholars based in Germany, Netherlands and Austria. B. Neinhüs's co-authors include B. Meinerzhagen, Christoph Jungemann, Stefan Decker, Tibor Grasser, R.W. Dutton, Peter Gräf, A.J. Scholten, L.F. Tiemeijer, F. M. Bufler and Peter Gräf and has published in prestigious journals such as Applied Surface Science, IEEE Transactions on Electron Devices and Solid-State Electronics.

In The Last Decade

B. Neinhüs

20 papers receiving 270 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B. Neinhüs Germany	9	272	73	16	12	4	22	275
D. Trommer Germany	11	337 1.2×	124 1.7×	10 0.6×	6 0.5×	3 0.8×	41	345
Bubai Dutta India	14	339 1.2×	131 1.8×	24 1.5×	14 1.2×	3 0.8×	29	361
S. Murthy United States	6	187 0.7×	106 1.5×	12 0.8×	8 0.7×		14	197
Yasunobu Matsuoka Japan	12	393 1.4×	74 1.0×	28 1.8×	6 0.5×	2 0.5×	59	409
Wendy Vanherle Belgium	7	218 0.8×	107 1.5×	21 1.3×	27 2.3×	2 0.5×	14	220
Masayuki Shigematsu Japan	10	274 1.0×	90 1.2×	7 0.4×	15 1.3×		46	297
K. Henson Belgium	11	275 1.0×	58 0.8×	14 0.9×	19 1.6×		23	279
Masataka Noguchi Japan	9	177 0.7×	82 1.1×	17 1.1×	13 1.1×		25	181
F. Lau Germany	6	183 0.7×	49 0.7×	11 0.7×	27 2.3×	1 0.3×	13	199
Hyang Kyun Kim South Korea	7	317 1.2×	117 1.6×	10 0.6×	5 0.4×		8	324

Countries citing papers authored by B. Neinhüs

Since Specialization

Citations

This map shows the geographic impact of B. Neinhüs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Neinhüs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Neinhüs more than expected).

Fields of papers citing papers by B. Neinhüs

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Neinhüs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Neinhüs. The network helps show where B. Neinhüs may publish in the future.

Co-authorship network of co-authors of B. Neinhüs

This figure shows the co-authorship network connecting the top 25 collaborators of B. Neinhüs. A scholar is included among the top collaborators of B. Neinhüs based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Neinhüs. B. Neinhüs is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Grasser, Tibor, Christoph Jungemann, B. Meinerzhagen, & B. Neinhüs. (2005). Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium. TechConnect Briefs. 3(2005). 25–28. 1 indexed citations

Jungemann, Christoph, Tibor Grasser, B. Neinhüs, & B. Meinerzhagen. (2005). Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium. IEEE Transactions on Electron Devices. 52(11). 2404–2408. 53 indexed citations

Meinerzhagen, B., et al.. (2004). Numerical simulation of strained Si/SiGe devices: the hierarchical approach. Applied Surface Science. 224(1-4). 235–240.

Neinhüs, B., et al.. (2004). Evaluation of compact noise modeling for Si/SiGe HBTs based on hierarchical hydrodynamic noise simulation. Applied Surface Science. 224(1-4). 350–353.

Jungemann, Christoph, B. Neinhüs, B. Meinerzhagen, & R.W. Dutton. (2004). Investigation of Compact Models for RF Noise in SiGe HBTs by Hydrodynamic Device Simulation. IEEE Transactions on Electron Devices. 51(6). 956–961. 18 indexed citations

Decker, Stefan, et al.. (2003). Comprehensive hydrodynamic simulation of an industrial SiGe heterobipolar transistor. 1. 105–108. 1 indexed citations

Jungemann, Christoph, et al.. (2003). Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile. e82 c. 219–222. 4 indexed citations

Scholten, A.J., L.F. Tiemeijer, R. van Langevelde, et al.. (2003). Compact modeling of drain and gate current noise for RF CMOS. 129–132. 22 indexed citations

Jungemann, Christoph, B. Neinhüs, Stefan Decker, & B. Meinerzhagen. (2002). Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and, HD models based on MC generated noise parameters. 21.2.1–21.2.4. 7 indexed citations

10.

Jungemann, Christoph, B. Neinhüs, Stefan Decker, & B. Meinerzhagen. (2002). Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results. IEEE Transactions on Electron Devices. 49(7). 1258–1264. 29 indexed citations

11.

Jungemann, Christoph, B. Neinhüs, & B. Meinerzhagen. (2002). Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices. I. Theory. IEEE Transactions on Electron Devices. 49(7). 1250–1257. 43 indexed citations

12.

Jungemann, Christoph, B. Neinhüs, & B. Meinerzhagen. (2002). Spatial analysis of the electron transit time in a silicon/germanium heterojunction bipolar transistor by drift-diffusion, hydrodynamic, and full-band Monte Carlo device simulation. 42–45. 1 indexed citations

13.

Decker, Stefan, et al.. (2001). Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs. TechConnect Briefs. 1(2001). 458–461. 19 indexed citations

14.

Jungemann, Christoph, B. Neinhüs, & B. Meinerzhagen. (2001). Investigation of the Local ForceApproximation in Numerical DeviceSimulation by Full‐bandMonte Carlo Simulation. VLSI design. 13(1-4). 281–285. 1 indexed citations

15.

Jungemann, Christoph, B. Neinhüs, & B. Meinerzhagen. (2001). Comparative study of electron transit times evaluated by DD, HD, and MC device simulation for a SiGe HBT. IEEE Transactions on Electron Devices. 48(10). 2216–2220. 23 indexed citations

16.

Decker, Stefan, B. Heinemann, Christoph Jungemann, B. Meinerzhagen, & B. Neinhüs. (2000). Investigation of High Frequency Noise in a SiGe HBT Based on Shockley’s Impedance Field Method and the Hydrodynamic Model. TechConnect Briefs. 364–367. 2 indexed citations

17.

Neinhüs, B., et al.. (2000). A CPU Efficient Electron Mobility Model for MOSFET Simulation with Quantum Corrected Charge Densities. 332–335. 5 indexed citations

18.

Decker, Stefan, et al.. (1999). A robust curve tracing scheme for the simulation of bipolar breakdown characteristics with nonlocal impact ionization models. European Solid-State Device Research Conference. 1. 492–495. 1 indexed citations

19.

Neinhüs, B., Stefan Decker, Peter Gräf, F. M. Bufler, & B. Meinerzhagen. (1998). Consistent Hydrodynamic and Monte‐Carlo Simulationof SiGe HBTs Based on Table Modelsthe Relaxation Times. VLSI design. 8(1-4). 387–391. 24 indexed citations

20.

Neinhüs, B., Peter Gräf, Stefan Decker, & B. Meinerzhagen. (1997). Examination of theTransient Drift-Diffusion and Hydrodynamic Modeling Accuracy for SiGe HBTs by 2D Monte-Carlo Device Simulation. European Solid-State Device Research Conference. 188–191. 6 indexed citations

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