Seonghoon Jin

1.6k total citations
59 papers, 1.2k citations indexed

About

Seonghoon Jin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Seonghoon Jin has authored 59 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 57 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 9 papers in Biomedical Engineering. Recurrent topics in Seonghoon Jin's work include Advancements in Semiconductor Devices and Circuit Design (50 papers), Semiconductor materials and devices (47 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). Seonghoon Jin is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (50 papers), Semiconductor materials and devices (47 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). Seonghoon Jin collaborates with scholars based in United States, South Korea and Switzerland. Seonghoon Jin's co-authors include Massimo V. Fischetti, Ting-wei Tang, Hong Shick Min, Terrance P. O’Regan, Woosung Choi, Sudarshan Narayanan, Yan Zhang, Jiseok Kim, Sung‐Min Hong and Keun‐Ho Lee and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Seonghoon Jin

56 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Seonghoon Jin United States 17 1.2k 414 327 182 24 59 1.2k
M. Cassé France 23 2.0k 1.8× 501 1.2× 289 0.9× 151 0.8× 43 1.8× 178 2.1k
T. Poiroux France 25 2.0k 1.7× 458 1.1× 181 0.6× 109 0.6× 19 0.8× 125 2.1k
Sheng‐Lyang Jang Taiwan 21 2.1k 1.8× 469 1.1× 129 0.4× 35 0.2× 41 1.7× 302 2.1k
S. Perisanu France 13 329 0.3× 180 0.4× 450 1.4× 285 1.6× 11 0.5× 38 633
A. Murthy United States 12 1.5k 1.3× 415 1.0× 204 0.6× 191 1.0× 21 0.9× 13 1.6k
Santiago J. Cartamil-Bueno Netherlands 10 257 0.2× 187 0.5× 329 1.0× 225 1.2× 9 0.4× 11 504
J. Salvia United States 17 934 0.8× 684 1.7× 736 2.3× 25 0.1× 13 0.5× 38 1.0k
C. Kuo United States 7 1.3k 1.1× 224 0.5× 117 0.4× 121 0.7× 20 0.8× 13 1.4k
Abhisek Dixit India 21 1.5k 1.3× 189 0.5× 131 0.4× 73 0.4× 60 2.5× 107 1.6k

Countries citing papers authored by Seonghoon Jin

Since Specialization
Citations

This map shows the geographic impact of Seonghoon Jin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Seonghoon Jin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Seonghoon Jin more than expected).

Fields of papers citing papers by Seonghoon Jin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Seonghoon Jin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Seonghoon Jin. The network helps show where Seonghoon Jin may publish in the future.

Co-authorship network of co-authors of Seonghoon Jin

This figure shows the co-authorship network connecting the top 25 collaborators of Seonghoon Jin. A scholar is included among the top collaborators of Seonghoon Jin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Seonghoon Jin. Seonghoon Jin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Park, Hong-Hyun, et al.. (2025). Quantum transport through a constriction in nanosheet gate-all-around transistors. Communications Engineering. 4(1). 92–92.
2.
Jin, Seonghoon, Kyungmin Lee, Woosung Choi, et al.. (2024). A New Anisotropic Driving Force Model for SiC Device Simulations. IEEE Transactions on Electron Devices. 71(3). 2024–2029. 2 indexed citations
3.
4.
Choi, Woosung, Heeso Noh, Hong-Hyun Park, et al.. (2024). Hierarchical Simulation of Monolithic CFETs Using Atomistic and Continuum Models. 1–4. 1 indexed citations
5.
Pham, Anh-Tuan, et al.. (2021). Critical Backscattering Length in Nanotransistors. IEEE Electron Device Letters. 43(2). 180–183. 4 indexed citations
6.
Vörös, Márton, et al.. (2021). First-principle Extraction of Surface Roughness in Si/Oxide Interfaces. 120–123. 1 indexed citations
7.
Jiang, Zhengping, Jing Wang, Hong-Hyun Park, et al.. (2017). Comprehensive Simulation Study of Direct Source-to-Drain Tunneling in Ultra-Scaled Si, Ge, and III-V DG-FETs. IEEE Transactions on Electron Devices. 64(3). 945–952. 11 indexed citations
8.
Pham, Anh-Tuan, Hesameddin Ilatikhameneh, Hong-Hyun Park, et al.. (2017). Universality of Short-Channel Effects on Ultrascaled MOSFET Performance. IEEE Electron Device Letters. 39(2). 168–171. 13 indexed citations
9.
Jin, Seonghoon, et al.. (2017). Band-to-Band Tunneling in SiGe: Influence of Alloy Scattering. IEEE Electron Device Letters. 38(4). 422–425. 2 indexed citations
10.
Pham, Anh-Tuan, Zhengping Jiang, Seonghoon Jin, et al.. (2016). On the efficient methods to solve multi-subband BTE in 1D gas systems: Decoupling approximations versus the accurate approach. 25. 189–192. 2 indexed citations
11.
12.
Jeong, Changwook, Hong-Hyun Park, Soo‐Young Park, et al.. (2013). Physical understanding of alloy scattering in SiGe channel for high-performance strained pFETs. Scholarworks@UNIST (Ulsan National Institute of Science and Technology). 12.2.1–12.2.4. 9 indexed citations
13.
Jin, Seonghoon, Sung‐Min Hong, & Christoph Jungemann. (2011). An Efficient Approach to Include Full-Band Effects in Deterministic Boltzmann Equation Solver Based on High-Order Spherical Harmonics Expansion. IEEE Transactions on Electron Devices. 58(5). 1287–1294. 23 indexed citations
14.
Jin, Seonghoon, Andreas Wettstein, Woosung Choi, F. M. Bufler, & E. Lyumkis. (2009). Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation. 1–4. 21 indexed citations
15.
Fischetti, Massimo V., Seonghoon Jin, Ting-wei Tang, et al.. (2009). Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source. Scholarworks (University of Massachusetts Amherst). 1–4. 11 indexed citations
16.
Fischetti, Massimo V., Terrance P. O’Regan, Sudarshan Narayanan, et al.. (2007). Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length. IEEE Transactions on Electron Devices. 54(9). 2116–2136. 94 indexed citations
17.
Jin, Seonghoon, et al.. (2006). NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices. JSTS Journal of Semiconductor Technology and Science. 6(1). 1–9. 3 indexed citations
18.
Jin, Seonghoon, Young Min Park, & Hong Shick Min. (2006). Influence of Electron-Phonon Interactions on the Electronic Transport in Nanowire Transistors. 35–38. 5 indexed citations
19.
Jin, Seonghoon, et al.. (2006). A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions. Journal of Applied Physics. 99(12). 158 indexed citations
20.
Jin, Seonghoon, et al.. (2004). Simulation of Quantum Effects in the Nano-scale Semiconductor Device. JSTS Journal of Semiconductor Technology and Science. 4(1). 32–40. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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