F.-J. Tegude

514 total citations
33 papers, 383 citations indexed

About

F.-J. Tegude is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, F.-J. Tegude has authored 33 papers receiving a total of 383 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in F.-J. Tegude's work include Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (15 papers) and Semiconductor Quantum Structures and Devices (14 papers). F.-J. Tegude is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (15 papers) and Semiconductor Quantum Structures and Devices (14 papers). F.-J. Tegude collaborates with scholars based in Germany, United Kingdom and Türkiye. F.-J. Tegude's co-authors include W. Prost, U. Auer, K. Goser, C. Pacha, Peter Glösekötter, I. Regolin, Christoph Gutsche, R. Reuter, R. Duschl and K. Eberl and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

F.-J. Tegude

30 papers receiving 359 citations

Peers

Countries citing papers authored by F.-J. Tegude

Since Specialization

Citations

This map shows the geographic impact of F.-J. Tegude's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F.-J. Tegude with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F.-J. Tegude more than expected).

Fields of papers citing papers by F.-J. Tegude

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F.-J. Tegude. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F.-J. Tegude. The network helps show where F.-J. Tegude may publish in the future.

Co-authorship network of co-authors of F.-J. Tegude

This figure shows the co-authorship network connecting the top 25 collaborators of F.-J. Tegude. A scholar is included among the top collaborators of F.-J. Tegude based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F.-J. Tegude. F.-J. Tegude is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures 2011 ·Nanotechnology ·Andrey Lysov, (unknown), Christoph Gutsche, I. Regolin, (unknown), M. Geller, W. Prost, F.-J. Tegude	25
2	P -type doping of GaAs nanowires 2008 ·Applied Physics Letters ·D. Stichtenoth, (unknown), Christoph Gutsche, I. Regolin, F.-J. Tegude, W. Prost, M. Seibt, Carsten Ronning	36
3	Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers 2007 ·Semiconductors ·(unknown), (unknown), (unknown), (unknown), (unknown), W. Prost, F.-J. Tegude	3
4	Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications 2007 ·Conference proceedings ·(unknown), M. Weiß, Sascha Fedderwitz, (unknown), W. Prost, (unknown), F.-J. Tegude	6
5	Optoelectronic 1:2 demultiplexing based on resonant tunnelling diodes and pin -photodetectors 2006 ·Electronics Letters ·(unknown), W. Prost, F.-J. Tegude	2
6	Design and modelling of a III/V mobile-gate with optical input on a silicon substrate 2005 ·W. Prost, (unknown), (unknown), (unknown), (unknown), (unknown), Johan Driesen, A. Che Mofor, A. Bakin, (unknown), S. Neumann, Andreas Stöhr, D. Jäger, T.M. McGinnity, A. Schlachetzki, F.-J. Tegude	1
7	Buffer optimization for INP-ON-SI [001] quasi-substrates 2005 ·(unknown), A. Che Mofor, A. Bakin, S. Neumann, (unknown), H.‐H. Wehmann, W. Prost, A. Schlachetzki, F.-J. Tegude	2
8	Growth and characterization of InAlP/InGaAs double barrier RTDs 2004 ·Journal of Crystal Growth ·S. Neumann, (unknown), W. Prost, F.-J. Tegude	1
9	Influence of layer structure on the current-voltage characteristics of Si∕SiGe interband tunneling diodes 2004 ·Journal of Applied Physics ·(unknown), W. Prost, F.-J. Tegude, M. Stoffel, R. Duschl, M. W. Dashiell, Oliver G. Schmidt	0
10	Experimental threshold logic implementations based on resonant tunnelling diodes 2003 ·W. Prost, (unknown), Peter Glösekötter, C. Pacha, (unknown), (unknown), K. Goser, F.-J. Tegude	3
11	Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE 2002 ·Journal of Crystal Growth ·S. Neumann, A. Bakin, (unknown), W. Prost, (unknown), A. Schlachetzki, F.-J. Tegude	7
12	InP-based HFETs and RTDs for high speed digital circuitry 2002 ·W. Prost, U. Auer, C. Pacha, (unknown), G. Janßen, (unknown), (unknown), (unknown), K. Goser, F.-J. Tegude	4
13	InP-based logic gates for low power monolithic optoelectronic circuits [InGaAs/InAlAs/InP] 2002 ·(unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), F.-J. Tegude	1
14	InAlAs/InGaAs/InP dual-gate-HFET's: new aspects and properties 2002 ·F.-J. Tegude, (unknown), R. Reuter, (unknown)	0
15	Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes 2001 ·IEEE Electron Device Letters ·U. Auer, W. Prost, (unknown), F.-J. Tegude, R. Duschl, K. Eberl	26
16	Threshold logic circuit design of parallel adders using resonant tunneling devices 2000 ·IEEE Transactions on Very Large Scale Integration (VLSI) Systems ·C. Pacha, U. Auer, (unknown), Peter Glösekötter, (unknown), W. Prost, F.-J. Tegude, K. Goser	107
17	InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources 2000 ·Journal of Crystal Growth ·(unknown), (unknown), W. Prost, F.-J. Tegude	15
18	NAND/NOR logic circuit using single InP-based RTBT 1998 ·Electronics Letters ·(unknown), G. Janßen, U. Auer, W. Prost, F.-J. Tegude	2
19	Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture 1996 ·Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) ·H.‐G. Bach, A. Umbach, G. Unterbörsch, W. Passenberg, G.G. Mekonnen, W. Schlaak, (unknown), W. Ebert, (unknown), Stefan van Waasen, (unknown), G. Janßen, R. Reuter, U. Auer, F.-J. Tegude	1
20	RF Investigations on HEMT's at Cryogenic Temperatures Down to 20 K using an On-Wafer Microwave Measurement Setup 1992 ·(unknown), (unknown), R. Reuter, Johannes Kraus, (unknown), (unknown), F.-J. Tegude	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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