Avid Kamgar

990 total citations
43 papers, 751 citations indexed

About

Avid Kamgar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Avid Kamgar has authored 43 papers receiving a total of 751 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in Avid Kamgar's work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). Avid Kamgar is often cited by papers focused on Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). Avid Kamgar collaborates with scholars based in United States, Germany and Taiwan. Avid Kamgar's co-authors include J. F. Koch, D. C. Tsui, P. Kneschaurek, S. J. Allen, L. J. Sham, G. Dorda, T. T. Sheng, M. D. Sturge, S.J. Hillenius and F. A. Baiocchi and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Avid Kamgar

38 papers receiving 677 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Avid Kamgar United States	15	517	460	168	87	49	43	751
Jiro Ōsaka Japan	13	438 0.8×	498 1.1×	158 0.9×	112 1.3×	40 0.8×	39	690
Bob Wilson	2	455 0.9×	455 1.0×	109 0.6×	76 0.9×	36 0.7×	4	570
J. Komeno Japan	17	550 1.1×	586 1.3×	192 1.1×	117 1.3×	21 0.4×	60	727
E. D. Beebe United States	14	634 1.2×	662 1.4×	97 0.6×	117 1.3×	39 0.8×	30	843
Yoshifumi Mori Japan	17	739 1.4×	632 1.4×	297 1.8×	128 1.5×	39 0.8×	46	871
J. Woodhead United Kingdom	16	576 1.1×	573 1.2×	134 0.8×	108 1.2×	31 0.6×	61	739
P. Roentgen Switzerland	12	431 0.8×	467 1.0×	100 0.6×	95 1.1×	24 0.5×	37	570
M. Baudet France	12	337 0.7×	463 1.0×	151 0.9×	57 0.7×	23 0.5×	25	526
E. Koppensteiner Austria	13	276 0.5×	294 0.6×	191 1.1×	80 0.9×	38 0.8×	27	458
T. Murotani Japan	18	672 1.3×	537 1.2×	193 1.1×	62 0.7×	59 1.2×	56	782

Countries citing papers authored by Avid Kamgar

Since Specialization

Citations

This map shows the geographic impact of Avid Kamgar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Avid Kamgar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Avid Kamgar more than expected).

Fields of papers citing papers by Avid Kamgar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Avid Kamgar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Avid Kamgar. The network helps show where Avid Kamgar may publish in the future.

Co-authorship network of co-authors of Avid Kamgar

This figure shows the co-authorship network connecting the top 25 collaborators of Avid Kamgar. A scholar is included among the top collaborators of Avid Kamgar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Avid Kamgar. Avid Kamgar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Celler, G. K., et al.. (2003). 6.2 GHz digital CMOS circuits in thin SIMOX films. 139–140. 1 indexed citations

Kamgar, Avid, et al.. (2003). Ultra-high speed CMOS circuits in thin SIMOX films. 8. 829–832. 2 indexed citations

Kamgar, Avid, et al.. (2002). Impact of nitrogen implant prior to the gate oxide growth on transient enhanced diffusion. 695–698. 8 indexed citations

Baumann, F.H., et al.. (2000). A Closer “Look” at Modern Gate Oxides. MRS Proceedings. 611. 8 indexed citations

Cheung, Kin P. & Avid Kamgar. (2000). ESD protection in deep submicron CMOS technology - Does the transient matter?. 524–527. 2 indexed citations

Jacobson, D. C., et al.. (1995). High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 416–419. 7 indexed citations

Kamgar, Avid, F. A. Baiocchi, A. B. Emerson, et al.. (1989). Self-aligned TiN barrier formation by rapid thermal nitridation of TiSi2 in ammonia. Journal of Applied Physics. 66(6). 2395–2401. 8 indexed citations

Kamgar, Avid, F. A. Baiocchi, & T. T. Sheng. (1986). Kinetics of arsenic activation and clustering in high dose implanted silicon. Applied Physics Letters. 48(16). 1090–1092. 22 indexed citations

Kamgar, Avid. (1984). Si MOS devices at low temperatures. 83–91.

10.

Kamgar, Avid, Wolf Fïchtner, T. T. Sheng, & D. C. Jacobson. (1984). Junction leakage studies in rapid thermal annealed diodes. Applied Physics Letters. 45(7). 754–756. 23 indexed citations

11.

Kamgar, Avid & R.L. Johnston. (1983). Delay times in Si MOSFETS in the 4.2–400 K temperature range. Solid-State Electronics. 26(4). 291–294. 6 indexed citations

12.

Kamgar, Avid, et al.. (1982). The shubnikov-De Haas effect in micron and submicron Si MOSFETs. Surface Science Letters. 113(1-3). A34–A34.

13.

Kamgar, Avid, et al.. (1982). Recrystallization of polysilicon films using incoherent light. Materials Letters. 1(3-4). 91–94. 24 indexed citations

14.

Kamgar, Avid. (1979). Temperature dependence of many-body effects in Si accumulation layers: An experimental observation. Solid State Communications. 29(10). 719–722. 4 indexed citations

15.

Kamgar, Avid, M. D. Sturge, & D. C. Tsui. (1978). Photoconductivity and absorption measurements on (100) and (911) Si MOSFETs. Surface Science. 73. 166–169. 5 indexed citations

16.

Tsui, D. C., S. J. Allen, R. A. Logan, Avid Kamgar, & S. N. Coppersmith. (1978). High frequency conductivity in silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlattice. Surface Science. 73. 419–433. 57 indexed citations

17.

Tsui, D. C., M. D. Sturge, Avid Kamgar, & S. J. Allen. (1978). Surface Band Structure of Electron Inversion Layers on Vicinal Planes of Si(100). Physical Review Letters. 40(25). 1667–1670. 28 indexed citations

18.

Sham, L. J., S. J. Allen, Avid Kamgar, & D. C. Tsui. (1978). Valley-Valley Splitting in Inversion Layers on a High-Index Surface of Silicon. Physical Review Letters. 40(7). 472–475. 104 indexed citations

19.

Kneschaurek, P., Avid Kamgar, & J. F. Koch. (1976). Electronic levels in surface space charge layers on Si(100). Physical review. B, Solid state. 14(4). 1610–1622. 87 indexed citations

20.

Kamgar, Avid, P. Kneschaurek, G. Dorda, & J. F. Koch. (1974). Resonance Spectroscopy of Electronic Levels in a Surface Accumulation Layer. Physical Review Letters. 32(22). 1251–1254. 73 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact