D.J. Dumin

2.0k total citations
75 papers, 1.6k citations indexed

About

D.J. Dumin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D.J. Dumin has authored 75 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Electrical and Electronic Engineering, 31 papers in Materials Chemistry and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D.J. Dumin's work include Semiconductor materials and devices (58 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Thin-Film Transistor Technologies (29 papers). D.J. Dumin is often cited by papers focused on Semiconductor materials and devices (58 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Thin-Film Transistor Technologies (29 papers). D.J. Dumin collaborates with scholars based in United States, Japan and Italy. D.J. Dumin's co-authors include R.S. Scott, Jay R. Maddux, P. H. Robinson, G. L. Pearson, George Brown, Ömer Oralkan, B. Moore, Lie Liu, Deniz Wong and T. Robinson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

D.J. Dumin

72 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D.J. Dumin United States 23 1.5k 466 283 153 86 75 1.6k
G. Kamarinos France 19 1.2k 0.8× 412 0.9× 244 0.9× 136 0.9× 53 0.6× 113 1.3k
C. Mazuré France 17 1.0k 0.7× 296 0.6× 200 0.7× 220 1.4× 60 0.7× 98 1.2k
P. Fazan United States 17 1.2k 0.8× 282 0.6× 188 0.7× 186 1.2× 123 1.4× 115 1.3k
D. Monroe United States 16 1.6k 1.0× 264 0.6× 585 2.1× 201 1.3× 34 0.4× 39 1.7k
R. R. Razouk United States 13 1.2k 0.8× 559 1.2× 420 1.5× 141 0.9× 71 0.8× 25 1.3k
O. Kienzle Germany 18 630 0.4× 657 1.4× 635 2.2× 157 1.0× 81 0.9× 38 1.1k
Christophe Longeaud France 21 1.5k 1.0× 1.2k 2.6× 292 1.0× 102 0.7× 65 0.8× 123 1.7k
M. Ghezzo United States 20 1.3k 0.9× 212 0.5× 349 1.2× 89 0.6× 147 1.7× 73 1.4k
W. S. Lau Singapore 17 759 0.5× 391 0.8× 153 0.5× 85 0.6× 166 1.9× 94 906
Max J. Schulz Germany 11 894 0.6× 248 0.5× 320 1.1× 74 0.5× 110 1.3× 27 1.0k

Countries citing papers authored by D.J. Dumin

Since Specialization
Citations

This map shows the geographic impact of D.J. Dumin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.J. Dumin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.J. Dumin more than expected).

Fields of papers citing papers by D.J. Dumin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.J. Dumin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.J. Dumin. The network helps show where D.J. Dumin may publish in the future.

Co-authorship network of co-authors of D.J. Dumin

This figure shows the co-authorship network connecting the top 25 collaborators of D.J. Dumin. A scholar is included among the top collaborators of D.J. Dumin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.J. Dumin. D.J. Dumin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dumin, D.J., et al.. (2003). Polarity dependence of thin oxide wearout. 28–33. 3 indexed citations
2.
Dumin, D.J., et al.. (2003). Correlation of wearout and breakdown in sub-10 nm silicon oxide. 718–721.
3.
4.
Dumin, D.J.. (2002). Oxide Reliability. 51 indexed citations
5.
Dumin, D.J., et al.. (2002). The use of low-level pre-tunneling currents to characterize thin oxide wearout and breakdown. 75. 189–194. 1 indexed citations
6.
Robinson, T., et al.. (2002). Differentiation between electric breakdowns and dielectric breakdown in thin silicon oxides. 146–151. 1 indexed citations
7.
Dumin, D.J., et al.. (2000). The field, time and fluence dependencies of trap generation in silicon oxides between 5 and 13.5 nm thick. Semiconductor Science and Technology. 15(8). 854–861. 7 indexed citations
8.
Oralkan, Ömer, et al.. (1999). Electric breakdowns and breakdown mechanisms in ultra-thin silicon oxides. Microelectronics Reliability. 39(2). 171–179. 11 indexed citations
9.
Oralkan, Ömer, et al.. (1998). The Search for Cathode and Anode Traps in High‐Voltage Stressed Silicon Oxides. Journal of The Electrochemical Society. 145(4). 1292–1296. 1 indexed citations
10.
Scott, R.S., et al.. (1996). Limitations on oxide thicknesses in flash EEPROM applications. 93–99. 21 indexed citations
11.
Dumin, D.J., et al.. (1995). Effects of nitrogen incorporation during growth on thin oxide wearout and breakdown. Solid-State Electronics. 38(6). 1161–1164. 1 indexed citations
12.
Dumin, D.J.. (1995). Wearout and Breakdown in Thin Silicon Oxide. Journal of The Electrochemical Society. 142(4). 1272–1277. 21 indexed citations
13.
Dumin, D.J., et al.. (1994). Low-level leakage currents in thin silicon oxide films. Journal of Applied Physics. 76(1). 319–327. 39 indexed citations
14.
Richardson, James T., D.J. Dumin, G. Q. Lo, et al.. (1992). Comparison of the Density and Distribution of Traps Generated by High Voltage Stress in Silicon Oxide and Silicon Oxynitrides. MRS Proceedings. 284. 4 indexed citations
15.
Dumin, D.J., et al.. (1991). Extrapolation of high-voltage stress measurements to low-voltage operation for thin silicon-oxide films. IEEE Transactions on Reliability. 40(1). 102–109. 22 indexed citations
16.
Yoshida, Takeshi, et al.. (1984). VB-7 MOS transistors fabricated on multiple silicon-insulator layers. IEEE Transactions on Electron Devices. 31(12). 1983–1984. 2 indexed citations
17.
Dumin, D.J.. (1970). Deep levels within the forbidden gap of silicon-on-sapphire films. Solid-State Electronics. 13(4). 415–424. 30 indexed citations
18.
Dumin, D.J.. (1970). Growth and Properties of Thin Germanium Films. Journal of The Electrochemical Society. 117(1). 95–95. 10 indexed citations
19.
Dumin, D.J. & P. H. Robinson. (1968). Electrically and optically active defects in silicon-on-sapphire films. Journal of Crystal Growth. 3-4. 214–218. 19 indexed citations
20.
Dumin, D.J. & J. F. Gibbons. (1963). Application of Quantized Trapped Flux in a Superconducting Memory. Journal of Applied Physics. 34(5). 1566–1567. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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