F. Schäffler

8.9k total citations · 1 hit paper
284 papers, 7.1k citations indexed

About

F. Schäffler is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F. Schäffler has authored 284 papers receiving a total of 7.1k indexed citations (citations by other indexed papers that have themselves been cited), including 233 papers in Electrical and Electronic Engineering, 219 papers in Atomic and Molecular Physics, and Optics and 81 papers in Materials Chemistry. Recurrent topics in F. Schäffler's work include Semiconductor Quantum Structures and Devices (142 papers), Semiconductor materials and devices (95 papers) and Advancements in Semiconductor Devices and Circuit Design (67 papers). F. Schäffler is often cited by papers focused on Semiconductor Quantum Structures and Devices (142 papers), Semiconductor materials and devices (95 papers) and Advancements in Semiconductor Devices and Circuit Design (67 papers). F. Schäffler collaborates with scholars based in Austria, Germany and United States. F. Schäffler's co-authors include G. Abstreiter, Günter Hesser, M. Mühlberger, Thomas Fromherz, H.-J. Herzog, Moritz Brehm, Maksym V. Kovalenko, G. Springholz, Wolfgang Heiß and D. Többen and has published in prestigious journals such as Journal of the American Chemical Society, Physical Review Letters and Advanced Materials.

In The Last Decade

F. Schäffler

282 papers receiving 6.9k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

High-mobility Si and Ge structures

1997 619 citations F. Schäffler profile →

Peers

Countries citing papers authored by F. Schäffler

Since Specialization

Citations

This map shows the geographic impact of F. Schäffler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Schäffler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Schäffler more than expected).

Fields of papers citing papers by F. Schäffler

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Schäffler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Schäffler. The network helps show where F. Schäffler may publish in the future.

Co-authorship network of co-authors of F. Schäffler

This figure shows the co-authorship network connecting the top 25 collaborators of F. Schäffler. A scholar is included among the top collaborators of F. Schäffler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Schäffler. F. Schäffler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Hole spin resonance in Ge double quantum dots 2018 ·arXiv (Cornell University) ·Hannes Watzinger, Josip Kukučka, Lada Vukušić, Fei Gao, Ting Wang, F. Schäffler, Jianjun Zhang, Georgios Katsaros	2
2	A germanium hole spin qubit 2018 ·Nature Communications ·Hannes Watzinger, Josip Kukučka, Lada Vukušić, Fei Gao, Ting Wang, F. Schäffler, Jianjun Zhang, Georgios Katsaros	181
3	Room-Temperature Group-IV LED Based on Defect-Enhanced Ge Quantum Dots 2017 ·ACS Photonics ·Patrick Rauter, (unknown), F. Schäffler, Thomas Fromherz, (unknown), Moritz Brehm	28
4	Realization of high-Q/V photonic crystal cavities defined by an effective Aubry-André-Harper bichromatic potential 2017 ·APL Photonics ·Angelica Simbula, (unknown), (unknown), Filippo Alpeggiani, Lucio Claudio Andreani, F. Schäffler, Thomas Fromherz, Mattéo Galli, Dario Gerace	26
5	Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction 2015 ·Microscopy and Microanalysis ·Heiko Groiß, Martin Gläser, Anna Marzegalli, Fabio Isa, Giovanni Isella, Leo Miglio, F. Schäffler	5
6	Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates 2015 ·Nanotechnology ·Moritz Brehm, Martyna Grydlik, Takeshi Tayagaki, Gregor Langer, F. Schäffler, Oliver G. Schmidt	15
7	Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates 2013 ·Nanotechnology ·Martyna Grydlik, Gregor Langer, Thomas Fromherz, F. Schäffler, Moritz Brehm	67
8	Unexpected Dominance of Vertical Dislocations in High‐Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning 2013 ·Advanced Materials ·Anna Marzegalli, Fabio Isa, Heiko Groiß, E. Müller, C.V. Falub, A. G. Taboada, Philippe Niedermann, Giovanni Isella, F. Schäffler, Francesco Montalenti, H. von Känel, Leo Miglio	54
9	One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si (1 1 10) 2012 ·Physical Review Letters ·(unknown), (unknown), Dan Matei, (unknown), F. Schäffler, Leo Miglio, G. Springholz	14
10	Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits 2012 ·Nanoscale Research Letters ·Martyna Grydlik, Moritz Brehm, F. Schäffler	11
11	Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates 2011 ·Nanotechnology ·Florian Hackl, Martyna Grydlik, Moritz Brehm, Heiko Groiß, F. Schäffler, Thomas Fromherz, G. Bauer	31
12	Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 2010 ·Physical Review Letters ·(unknown), Francesco Montalenti, Armando Rastelli, N. Hrauda, (unknown), Heiko Groiß, J. Stangl, Fabio Pezzoli, F. Schäffler, Oliver G. Schmidt, Leo Miglio, G. Bauer	27
13	Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates 2009 ·Physical Review Letters ·Tobias U. Schülli, Guglielmo Vastola, Marie‐Ingrid Richard, Ângelo Malachias, G. Renaud, Filip Uhlı́k, Francesco Montalenti, (unknown), Leo Miglio, F. Schäffler, G. Bauer	74
14	Exchange‐Coupled Bimagnetic Wüstite/Metal Ferrite Core/Shell Nanocrystals: Size, Shape, and Compositional Control 2009 ·Small ·Maryna I. Bodnarchuk, Maksym V. Kovalenko, Heiko Groiß, Roland Resel, M. Reissner, Günter Hesser, R. T. Lechner, Walter Steiner, F. Schäffler, Wolfgang Heiß	73
15	Physics of semiconductors : 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 24-28 July 2006 2007 ·American Institute of Physics eBooks ·W. Jantsch, F. Schäffler	1
16	Intervalley Gap Anomaly of Two-Dimensional Electrons in Silicon 2006 ·Physical Review Letters ·Keji Lai, W. Pan, D. C. Tsui, S. A. Lyon, M. Mühlberger, F. Schäffler	19
17	Thermally stimulated relaxation of misfit strains in Si1−xGex/Si(100) heterostructures with different buffer layers 2005 ·Crystallography Reports ·T. G. Yugova, M. G. Mil’vidskiĭ, (unknown), F. Schäffler	1
18	Spin Manipulation of Free Two-Dimensional Electrons inSi/SiGeQuantum Wells 2005 ·Physical Review Letters ·Alexei M. Tyryshkin, S. A. Lyon, W. Jantsch, F. Schäffler	68
19	Two-Flux Composite Fermion Series of the Fractional Quantum Hall States in Strained Si 2004 ·Physical Review Letters ·Keji Lai, W. Pan, D. C. Tsui, S. A. Lyon, M. Mühlberger, F. Schäffler	54
20	Metastability of Si1−yCy epilayers under 2MeV α-particle irradiation 2000 ·Micron ·M. Berti, D. De Salvador, A. V. Drigo, (unknown), J. Stangl, F. Schäffler, S. Zerlauth, G. Bauer, A. Armigliato	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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