D. Többen

751 total citations
20 papers, 558 citations indexed

About

D. Többen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, D. Többen has authored 20 papers receiving a total of 558 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in D. Többen's work include Quantum and electron transport phenomena (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Semiconductor Quantum Structures and Devices (11 papers). D. Többen is often cited by papers focused on Quantum and electron transport phenomena (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Semiconductor Quantum Structures and Devices (11 papers). D. Többen collaborates with scholars based in Germany, United States and Austria. D. Többen's co-authors include F. Schäffler, G. Abstreiter, B. Holländer, H.-J. Herzog, A. Zrenner, A. K. Stamper, S. Nguyen, Markus Holzmann, D. Wharam and Ż. Wilamowski and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

D. Többen

20 papers receiving 531 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Többen Germany 11 459 370 102 67 37 20 558
T. Takebe Japan 14 458 1.0× 371 1.0× 212 2.1× 115 1.7× 79 2.1× 40 588
L. G. Meiners United States 15 568 1.2× 392 1.1× 199 2.0× 39 0.6× 51 1.4× 27 623
Jorge Santiago United States 11 210 0.5× 218 0.6× 108 1.1× 80 1.2× 12 0.3× 32 379
C. Anayama Japan 11 303 0.7× 295 0.8× 71 0.7× 40 0.6× 73 2.0× 25 378
M. Rouzeyre France 12 281 0.6× 251 0.7× 126 1.2× 59 0.9× 14 0.4× 38 382
G. Strauch Germany 11 218 0.5× 112 0.3× 92 0.9× 41 0.6× 75 2.0× 36 316
Kazunori Moriki Japan 13 270 0.6× 135 0.4× 165 1.6× 31 0.5× 20 0.5× 37 363
N. Hayafuji Japan 12 410 0.9× 355 1.0× 75 0.7× 61 0.9× 66 1.8× 40 468
M. L. Lovejoy United States 13 572 1.2× 244 0.7× 131 1.3× 38 0.6× 70 1.9× 42 654
P. V. Shapkin Russia 11 432 0.9× 230 0.6× 239 2.3× 46 0.7× 9 0.2× 59 491

Countries citing papers authored by D. Többen

Since Specialization
Citations

This map shows the geographic impact of D. Többen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Többen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Többen more than expected).

Fields of papers citing papers by D. Többen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Többen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Többen. The network helps show where D. Többen may publish in the future.

Co-authorship network of co-authors of D. Többen

This figure shows the co-authorship network connecting the top 25 collaborators of D. Többen. A scholar is included among the top collaborators of D. Többen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Többen. D. Többen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wilamowski, Ż., et al.. (2001). Screening Breakdown on the Route toward the Metal-Insulator Transition in Modulation Doped Si/SiGe Quantum Wells. Physical Review Letters. 87(2). 39 indexed citations
2.
Schnabel, R., L. A. Clevenger, G. Costrini, et al.. (2000). Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond (invited). Microelectronic Engineering. 50(1-4). 265–270. 5 indexed citations
3.
Xia, Li-Qun, et al.. (1999). High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicate Glass: A Solution for Next Generation Shallow Trench Isolation. Journal of The Electrochemical Society. 146(3). 1181–1185. 9 indexed citations
4.
Nguyen, S., et al.. (1999). Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits. IBM Journal of Research and Development. 43(1.2). 5–38. 74 indexed citations
5.
Holzmann, Markus, D. Többen, G. Abstreiter, et al.. (1996). Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures. Surface Science. 361-362. 673–676. 2 indexed citations
6.
Többen, D., et al.. (1996). Influence of the Cure Process on the Properties of Hydrogen Silsesquioxane Spin-On-Glass. MRS Proceedings. 443. 15 indexed citations
7.
Többen, D., D. Wharam, G. Abstreiter, J. P. Kotthaus, & F. Schäffler. (1996). Quantized conductance in a split-gate device and impurity-related magnetotransport phenomena. Solid-State Electronics. 40(1-8). 405–408. 1 indexed citations
8.
Holzmann, Markus, D. Többen, & G. Abstreiter. (1996). Transport in silicon/germanium nanostructures. Applied Surface Science. 102. 230–236. 3 indexed citations
9.
Többen, D., Markus Holzmann, G. Abstreiter, et al.. (1995). Antidot superlattices in two-dimensional hole gases confined in strained germanium layers. Semiconductor Science and Technology. 10(10). 1413–1417. 5 indexed citations
10.
Többen, D., et al.. (1995). In-plane-gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation. Applied Physics Letters. 67(11). 1579–1581. 10 indexed citations
11.
Többen, D., D. Wharam, G. Abstreiter, J. P. Kotthaus, & F. Schäffler. (1995). Transport properties of a Si/SiGe quantum point contact in the presence of impurities. Physical review. B, Condensed matter. 52(7). 4704–4707. 14 indexed citations
12.
Holzmann, Markus, D. Többen, G. Abstreiter, et al.. (1995). One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures. Applied Physics Letters. 66(7). 833–835. 9 indexed citations
13.
Nützel, J. F., et al.. (1995). Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates. Journal of Crystal Growth. 150. 1011–1014. 15 indexed citations
14.
Többen, D., et al.. (1995). Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3heterostructure. Semiconductor Science and Technology. 10(5). 711–714. 34 indexed citations
15.
Többen, D., Markus Holzmann, Stephen J. Kuhn, et al.. (1994). Electron transport through antidot superlattices in Si/Si0.7Ge0.3heterostructures. Physical review. B, Condensed matter. 50(12). 8853–8856. 16 indexed citations
16.
Többen, D., et al.. (1994). High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance. Solid-State Electronics. 37(4-6). 949–952. 32 indexed citations
17.
Holzmann, Markus, D. Többen, G. Abstreiter, & F. Schäffler. (1994). Field-effect induced electron channels in a Si/Si0.7Ge0.3 heterostructure. Journal of Applied Physics. 76(6). 3917–3919. 7 indexed citations
18.
Többen, D., F. Schäffler, A. Zrenner, & G. Abstreiter. (1992). Magnetotransport studies of remote doped Si/Si1−xGex heterostructures grown on relaxed SiGe buffer layers. Thin Solid Films. 222(1-2). 15–19. 4 indexed citations
19.
Schäffler, F., D. Többen, H.-J. Herzog, G. Abstreiter, & B. Holländer. (1992). High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer. Semiconductor Science and Technology. 7(2). 260–266. 211 indexed citations
20.
Többen, D., F. Schäffler, A. Zrenner, & G. Abstreiter. (1992). Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/Si1−xGexheterostructures. Physical review. B, Condensed matter. 46(7). 4344–4347. 53 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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