G. Polupan

572 total citations
86 papers, 413 citations indexed

About

G. Polupan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. Polupan has authored 86 papers receiving a total of 413 indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 49 papers in Materials Chemistry and 27 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. Polupan's work include Semiconductor Quantum Structures and Devices (24 papers), ZnO doping and properties (23 papers) and Advanced Semiconductor Detectors and Materials (19 papers). G. Polupan is often cited by papers focused on Semiconductor Quantum Structures and Devices (24 papers), ZnO doping and properties (23 papers) and Advanced Semiconductor Detectors and Materials (19 papers). G. Polupan collaborates with scholars based in Mexico, Ukraine and United States. G. Polupan's co-authors include T.V. Torchynska, J.L. Casas Espínola, L. Khomenkova, A. Escobosa, A. Cano, Alexander V. Kolobov, Ignacio Carvajal-Mariscal, N. Korsunska, J. Aguilar‐Hernández and S. Ostapenko and has published in prestigious journals such as International Journal of Heat and Mass Transfer, Energy and Applied Surface Science.

In The Last Decade

G. Polupan

78 papers receiving 406 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Polupan Mexico 10 272 255 96 94 54 86 413
Doo‐Jin Choi South Korea 11 291 1.1× 347 1.4× 71 0.7× 27 0.3× 88 1.6× 42 533
Chun Gao China 8 265 1.0× 206 0.8× 45 0.5× 22 0.2× 33 0.6× 16 466
Matthias Kröll Germany 9 200 0.7× 353 1.4× 230 2.4× 99 1.1× 51 0.9× 20 462
S. Saadaoui Saudi Arabia 13 122 0.4× 231 0.9× 97 1.0× 161 1.7× 58 1.1× 50 432
Ananya Renuka Balakrishna United States 12 160 0.6× 193 0.8× 68 0.7× 15 0.2× 86 1.6× 29 369
Chuck Hsu Taiwan 13 228 0.8× 306 1.2× 63 0.7× 66 0.7× 32 0.6× 23 390
Sung Ju Tark South Korea 12 193 0.7× 358 1.4× 88 0.9× 72 0.8× 38 0.7× 34 455
Marek E. Schmidt Japan 12 194 0.7× 256 1.0× 146 1.5× 116 1.2× 35 0.6× 40 415
L. C. Burton United States 12 344 1.3× 363 1.4× 62 0.6× 91 1.0× 18 0.3× 53 473
Kazuhiko Tsutsumi Japan 11 121 0.4× 192 0.8× 123 1.3× 147 1.6× 57 1.1× 51 338

Countries citing papers authored by G. Polupan

Since Specialization
Citations

This map shows the geographic impact of G. Polupan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Polupan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Polupan more than expected).

Fields of papers citing papers by G. Polupan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Polupan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Polupan. The network helps show where G. Polupan may publish in the future.

Co-authorship network of co-authors of G. Polupan

This figure shows the co-authorship network connecting the top 25 collaborators of G. Polupan. A scholar is included among the top collaborators of G. Polupan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Polupan. G. Polupan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Torchynska, T.V., et al.. (2023). Two excitation pathways of Pr3+ ion emission in HfO2:Si:Pr films depending on crystalline phase transformations in annealing. Journal of Luminescence. 258. 119789–119789. 2 indexed citations
3.
Torchynska, T.V., et al.. (2023). Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing. Journal of Materials Science Materials in Electronics. 34(14). 1 indexed citations
4.
Torchynska, T.V., et al.. (2021). Raman scattering, emission and crystalline phase evolutions in Nd-doped Si-rich HfO2:N films. Journal of Materials Science Materials in Electronics. 32(13). 17473–17481. 5 indexed citations
5.
Polupan, G., et al.. (2020). Emission and HR-XRD varying in GaAs/AlGaInAs heterostructures with InAs quantum dots at annealing. Journal of Materials Science Materials in Electronics. 31(3). 2643–2649. 5 indexed citations
6.
Torchynska, T.V., et al.. (2020). Transmittance, Absorbance and Emission of Ga related Defects in Ga-doped ZnO Nanocrystal Films. MRS Advances. 5(59-60). 3015–3022. 5 indexed citations
7.
Torchynska, T.V., et al.. (2018). Silver related emitting defects and aging ZnO nanocrystals. Materials Chemistry and Physics. 211. 462–467. 6 indexed citations
8.
Torchynska, T.V., et al.. (2017). Emission transformation in CdSe/ZnS quantum dots conjugated to biomolecules. Journal of Photochemistry and Photobiology B Biology. 170. 309–313. 6 indexed citations
9.
Torchynska, T.V., et al.. (2016). Surface modification in mixture of ZnO + 3%C nanocrystals stimulated by mechanical processing. AIMS Materials Science. 3(1). 204–213. 1 indexed citations
10.
Torchynska, T.V., et al.. (2016). Radiative defects, emission and structure of ZnO nanocrystals obtained by electrochemical method. Materials Research Bulletin. 85. 161–167. 11 indexed citations
11.
Polupan, G., et al.. (2016). Aspects of emission variation in CdSeTe/ZnS quantum dots conjugated to antibodies. Journal of Materials Science Materials in Electronics. 28(10). 7047–7052. 4 indexed citations
12.
Polupan, G., et al.. (2015). Estudio Numérico del Efecto de la Presión en el Proceso de Mezcla Metano-Oxígeno en un Arreglo de Chorros 4-Lug Bolt. Información tecnológica. 26(2). 153–162. 3 indexed citations
13.
Polupan, G., et al.. (2012). Emission and elastic strain in InAs dot-in-a well InGaAs/GaAs structures. Journal of Luminescence. 132(5). 1270–1273. 1 indexed citations
14.
Carvajal-Mariscal, Ignacio, et al.. (2010). Tube Banks Heat Transfer Enhancement Using Conical Fins. 1745–1750. 1 indexed citations
15.
Polupan, G., et al.. (2008). Analytical and experimental research for decreasing nitrogen oxides emissions. Applied Thermal Engineering. 29(8-9). 1614–1621. 18 indexed citations
16.
Torchynska, T.V. & G. Polupan. (2008). Exciton related photoluminescence stimulation in SiC nanocrystals. Superlattices and Microstructures. 45(4-5). 222–227. 9 indexed citations
17.
Torchynska, T.V., et al.. (2005). Photoluminescence and photocurrent of Schottky diodes based on silicon nanocrystallites. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(8). 3019–3022. 1 indexed citations
18.
Torchynska, T.V. & G. Polupan. (2004). High efficiency solar cells for space applications. Superficies y Vacío. 17(3). 21–25. 11 indexed citations
19.
Polupan, G., et al.. (2003). Study of the 90° Elbows Performance as Phase Separators in an Air-Water Two-Phase Flow. 1439–1444. 1 indexed citations
20.
Torchynska, T.V., et al.. (1999). Mechanism of injection-enhanced defect transformation in LPE GaAs structures. Physica B Condensed Matter. 273-274. 1037–1040. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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