Albert A. Burk

2.4k citations

85 papers · 2.0k indexed · h-index 25

Impact in

Electrical and Electronic Engineering top 2%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Electromagnetic Compatibility and Noise Suppression
- Multilevel Inverters and Converters
- Advanced DC-DC Converters
- HVDC Systems and Fault Protection
- Silicon and Solar Cell Technologies
Condensed Matter Physics top 5%

Papers in

Electrical and Electronic Engineering 84
- Silicon Carbide Semiconductor Technologies 78
- Semiconductor materials and devices 37
- Silicon and Solar Cell Technologies 17
- Electromagnetic Compatibility and Noise Suppression 14
- HVDC Systems and Fault Protection 13
- Multilevel Inverters and Converters 12
Electronic, Optical and Magnetic Materials 10
- Copper Interconnects and Reliability 9

Co-authors: Michael O’Loughlin John W. Palmour L.B. Rowland Jim Richmond Lin Cheng Anant Agarwal Charles Scozzie Edward Van Brunt
Journals: Materials science forum (36 papers)Journal of Crystal Growth (4 papers)IEEE Electron Device Letters (2 papers)Applied Physics Letters (2 papers)Journal of Applied Physics (1 paper)
Partner nations: United States China Germany

In The Last Decade

Albert A. Burk

83 papers receiving 1.9k citations

Peers

Countries citing papers authored by Albert A. Burk

Since Specialization

Citations

This map shows the geographic impact of Albert A. Burk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Albert A. Burk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Albert A. Burk more than expected).

Fields of papers citing papers by Albert A. Burk

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Albert A. Burk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Albert A. Burk. The network helps show where Albert A. Burk may publish in the future.

Co-authors

The 25 scholars most cited alongside Albert A. Burk, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Albert A. Burk Line = papers co-authored together Albert A. Burk links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor Materials science forum ·Sei‐Hyung Ryu, Daniel J. Lichtenwalner, Edward Van Brunt, Craig Capell, Michael O’Loughlin, Charlotte Jonas, 昭博髙﨑, TM Benson, Jim Richmond, Albert A. Burk, Brett Hull, Heather O’Brien, Aderinto Ogunniyi, Aivars J. Lelis, Jeff B. Casady, David Grider, Scott T. Allen, John W. Palmour	2017	10
2	Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices Materials science forum ·Michael O’Loughlin, Albert A. Burk, D. Tsvetkov, J.H. ZHANG, John W. Palmour	2016	8
3	Next-Generation Planar SiC MOSFETs from 900 V to 15 kV Materials science forum ·Scott T. Allen, Vipindas Pala, زهرا شهبانی, Brett Hull, Lin Cheng, Sei‐Hyung Ryu, Jim Richmond, Michael O’Loughlin, Albert A. Burk, John W. Palmour	2015	17
4	10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems Vipindas Pala, Edward Van Brunt, Lin Cheng, Michael O’Loughlin, Jim Richmond, Albert A. Burk, Scott T. Allen, David Grider, John W. Palmour, Charles Scozzie	2014	127
5	22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation Edward Van Brunt, Scott T. Allen, Albert A. Burk, John W. Palmour, Charles Scozzie, Lin Cheng, Michael O’Loughlin, Craig Capell, Charlotte Jonas, Азамат Бакиров, Jim Richmond, Vipindas Pala, Sei‐Hyung Ryu	2014	68
6	Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV John W. Palmour, Lin Cheng, Vipindas Pala, Edward Van Brunt, Daniel J. Lichtenwalner, Chen Liu, Jim Richmond, Michael O’Loughlin, Sei‐Hyung Ryu, Scott T. Allen, Albert A. Burk, Charles Scozzie	2014	241
7	Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings Materials science forum ·Lin Cheng, John W. Palmour, Anant Agarwal, Scott T. Allen, Edward Van Brunt, G. Roger Vázquez, Vipindas Pala, Nicoleta Galatanu, Alex Q. Huang, Michael O’Loughlin, Albert A. Burk, David Grider, Charles Scozzie	2014	30
8	15 kV, Large Area (1 cm<sup>2</sup>), 4H-SiC p-Type Gate Turn-Off Thyristors Materials science forum ·Lin Cheng, Anant Agarwal, Craig Capell, Michael O’Loughlin, Азамат Бакиров, Jincai Zhang, Jim Richmond, Albert A. Burk, John W. Palmour, Aderinto Ogunniyi, Heather O’Brien, Charles Scozzie	2013	37
9	Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers Materials science forum ·Nadeemullah A. Mahadik, Robert E. Stahlbush, Joshua D. Caldwell, Michael O’Loughlin, Albert A. Burk	2012	4
10	SiC super GTO thyristor technology development: Present status and future perspective Q. Zhanga, Anant Agarwal, Craig Capell, Lin Cheng, Michael O’Loughlin, Albert A. Burk, John W. Palmour, V.A.K. Temple, Aderinto Ogunniyi, Heather O’Brien, Charles Scozzie	2011	28
11	10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC Materials science forum ·准宮下, Robert Callanan, Anant Agarwal, Albert A. Burk, Michael O’Loughlin, John W. Palmour, Charles Scozzie	2010	8
12	9 kV, 1 cm×1 cm SiC super gto technology development for pulse power Anant Agarwal, Craig Capell, Pedro José Silva Carvalho, Jim Richmond, Robert Callanan, Michael O’Loughlin, Albert A. Burk, Charles L. Melcher, John W. Palmour, V.A.K. Temple, Heather O’Brien, Charles Scozzie	2009	31
13	Defect Status in SiC Manufacturing Materials science forum ·Pragati Samal, R.T. Leonard, Michael J. Paisley, 陈衍夏, Michael O’Loughlin, Albert A. Burk, Adrian R. Powell, D.P. Malta, Koji Matuzono, M.F. Brady, Seyed Kazem Amirkhalili, V. F. Tsvetkov, H. McD. Hobgood, Joseph J. Sumakeris, C. Basceri, Sellars Jh, Calvin H. Carter, Cengiz M. Balkaş	2009	17
14	Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective Superlattices and Microstructures ·St.G. Müller, M.F. Brady, Albert A. Burk, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Joseph J. Sumakeris, V. F. Tsvetkov, C.H. Carter	2006	20
15	A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures Anant Agarwal, R.R. Siergiej, S. R. Seshadri, Mark White, P.G. McMullin, Albert A. Burk, L.B. Rowland, C.D. Brandt, R.H. Hopkins	2002	19
16	Multi-Wafer VPE Growth of Highly Uniform SiC Epitaxial Layers MRS Proceedings ·Michael O’Loughlin, N. K. THAKARE S. K. KHASBARDAR, Albert A. Burk	1999	3
17	Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC Materials science forum ·L.B. Rowland, Albert A. Burk, C.D. Brandt	1998	7
18	Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures MRS Proceedings ·Anant Agarwal, R.R. Siergiej, S. R. Seshadri, Michael White, P.G. McMullin, Albert A. Burk, L.B. Rowland, C.D. Brandt, R.H. Hopkins	1996	16
19	High power silicon carbide IMPATT diode development G.W. Eldridge, D.L. Barrett, Albert A. Burk, H. McD. Hobgood, R.R. Siergiej, C.D. Brandt, M. A. Tischler, Griff L. Bilbro, R.J. Trew, William H. Clark	1993	1
20	Application of an electrochemical arsine generator on a high throughput MOVPE reactor Journal of Crystal Growth ·Albert A. Burk	1992	3

About Albert A. Burk

Albert A. Burk is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Ceramics and Composites, having authored 85 papers that have together received 2.0k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (78 papers), Semiconductor materials and devices (37 papers), Silicon and Solar Cell Technologies (17 papers), Electromagnetic Compatibility and Noise Suppression (14 papers), HVDC Systems and Fault Protection (13 papers), Multilevel Inverters and Converters (12 papers), Semiconductor materials and interfaces (10 papers) and Copper Interconnects and Reliability (9 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.8k citations), Condensed Matter Physics (201 citations), Ceramics and Composites (81 citations), Electronic, Optical and Magnetic Materials (215 citations) and Atomic and Molecular Physics, and Optics (265 citations). Albert A. Burk has collaborated with scholars based in United States, China and Germany. Frequent co-authors include Michael O’Loughlin, John W. Palmour, L.B. Rowland, Jim Richmond, Lin Cheng, Anant Agarwal, Charles Scozzie, Edward Van Brunt, Scott T. Allen and Sei‐Hyung Ryu. Their work appears in journals such as Materials science forum, Journal of Crystal Growth, IEEE Electron Device Letters, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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