R.T. Leonard

557 total citations
20 papers, 444 citations indexed

About

R.T. Leonard is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R.T. Leonard has authored 20 papers receiving a total of 444 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R.T. Leonard's work include Silicon Carbide Semiconductor Technologies (15 papers), Silicon and Solar Cell Technologies (6 papers) and Copper Interconnects and Reliability (4 papers). R.T. Leonard is often cited by papers focused on Silicon Carbide Semiconductor Technologies (15 papers), Silicon and Solar Cell Technologies (6 papers) and Copper Interconnects and Reliability (4 papers). R.T. Leonard collaborates with scholars based in China, United States and United Kingdom. R.T. Leonard's co-authors include H. McD. Hobgood, M.F. Brady, V. F. Tsvetkov, Adrian R. Powell, Calvin H. Carter, D.P. Malta, Jason R. Jenny, R Glass, S. Müller and C.C. Koch and has published in prestigious journals such as Applied Physics Letters, Scripta Materialia and JOM.

In The Last Decade

R.T. Leonard

20 papers receiving 422 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R.T. Leonard China	12	367	76	69	68	64	20	444
D. Henshall United States	10	478 1.3×	78 1.0×	59 0.9×	61 0.9×	77 1.2×	11	522
Hiroshi Tsuge Japan	12	415 1.1×	88 1.2×	59 0.9×	112 1.6×	43 0.7×	49	482
Calvin H. Carter China	16	621 1.7×	148 1.9×	34 0.5×	114 1.7×	96 1.5×	23	671
Takashi Aigo Japan	12	436 1.2×	115 1.5×	53 0.8×	90 1.3×	43 0.7×	38	481
St.G. Müller Germany	12	553 1.5×	123 1.6×	72 1.0×	68 1.0×	110 1.7×	23	631
M. H. Hong United States	9	319 0.9×	105 1.4×	95 1.4×	70 1.0×	120 1.9×	18	452
E. Pettenpaul Germany	8	288 0.8×	65 0.9×	36 0.5×	34 0.5×	100 1.6×	15	351
Tianxing Ma United States	11	340 0.9×	100 1.3×	78 1.1×	30 0.4×	124 1.9×	23	449
Maher Soueidan France	11	249 0.7×	59 0.8×	79 1.1×	72 1.1×	75 1.2×	34	329
Christian Brylinski France	13	418 1.1×	109 1.4×	24 0.3×	97 1.4×	136 2.1×	51	489

Countries citing papers authored by R.T. Leonard

Since Specialization

Citations

This map shows the geographic impact of R.T. Leonard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.T. Leonard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.T. Leonard more than expected).

Fields of papers citing papers by R.T. Leonard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.T. Leonard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.T. Leonard. The network helps show where R.T. Leonard may publish in the future.

Co-authorship network of co-authors of R.T. Leonard

This figure shows the co-authorship network connecting the top 25 collaborators of R.T. Leonard. A scholar is included among the top collaborators of R.T. Leonard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.T. Leonard. R.T. Leonard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Williams, M. B., Linda Cahalan, Josué J. López, et al.. (2023). Dynamic Behavior Characterization of Aluminum Alloy 7020 Manufactured Using the Additive Friction Stir Deposition Process. JOM. 75(11). 4868–4880. 21 indexed citations

Leonard, R.T., Michael J. Paisley, Joseph J. Sumakeris, et al.. (2017). Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization. Materials science forum. 897. 226–229. 2 indexed citations

Yang, Yu, Fangzhen Wu, Joseph J. Sumakeris, et al.. (2016). Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method. Materials science forum. 858. 15–18. 10 indexed citations

Sumakeris, Joseph J., R.T. Leonard, Adrian R. Powell, et al.. (2016). Dislocation Characterization in 4H-SiC Crystals. Materials science forum. 858. 393–396. 10 indexed citations

Powell, Adrian R., Joseph J. Sumakeris, Michael J. Paisley, et al.. (2016). Bulk Growth of Large Area SiC Crystals. Materials science forum. 858. 5–10. 52 indexed citations

Leonard, R.T., Michael J. Paisley, Michael O’Loughlin, et al.. (2009). Defect Status in SiC Manufacturing. Materials science forum. 615-617. 3–6. 17 indexed citations

Leonard, R.T., Adrian R. Powell, C. Basceri, et al.. (2008). 100 mm 4HN-SiC Wafers with Zero Micropipe Density. Materials science forum. 600-603. 7–10. 45 indexed citations

Burk, Albert A., Michael O’Loughlin, Joseph J. Sumakeris, et al.. (2008). SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices. Materials science forum. 600-603. 77–82. 7 indexed citations

Müller, St.G., M.F. Brady, Albert A. Burk, et al.. (2006). Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective. Superlattices and Microstructures. 40(4-6). 195–200. 20 indexed citations

10.

Burk, Albert A., Michael O’Loughlin, Michael J. Paisley, et al.. (2006). SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers. Materials science forum. 527-529. 159–162. 4 indexed citations

11.

Powell, Adrian R., R.T. Leonard, M.F. Brady, et al.. (2004). Large Diameter 4H-SiC Substrates for Commercial Power Applications. Materials science forum. 457-460. 41–46. 20 indexed citations

12.

Hobgood, H. McD., M.F. Brady, Jason R. Jenny, et al.. (2004). Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances. Materials science forum. 457-460. 3–8. 32 indexed citations

13.

Powell, Adrian R., Joseph J. Sumakeris, R.T. Leonard, et al.. (2004). Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications. MRS Proceedings. 815. 8 indexed citations

14.

Müller, S., M.F. Brady, R Glass, et al.. (2003). Sublimation-Grown Semi-Insulating SiC for High Frequency Devices. Materials science forum. 433-436. 39–44. 47 indexed citations

15.

Müller, S., M.F. Brady, R Glass, et al.. (2002). High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production. Materials science forum. 389-393. 23–28. 37 indexed citations

16.

Hobgood, H. McD., M.F. Brady, R Glass, et al.. (2000). Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications. Materials science forum. 338-342. 3–8. 65 indexed citations

17.

Leonard, R.T. & C.C. Koch. (1997). X-ray intensity decrease from absorption effects in mechanically milled systems. Scripta Materialia. 36(1). 41–46. 13 indexed citations

18.

Leonard, R.T. & S. M. Bedair. (1996). Photoassisted dry etching of GaN. Applied Physics Letters. 68(6). 794–796. 22 indexed citations

19.

Leonard, R.T. & C.C. Koch. (1992). Nanoscale composites of Si/Sn and Ge/Sn synthesized by mechanical attrition. Nanostructured Materials. 1(6). 471–478. 11 indexed citations

20.

Abrams, Paul, R.T. Leonard, & Benjamin D. Wright. (1977). Power-driven catheter-withdrawal machine for use in urethral pressure-profile measurement. Medical & Biological Engineering & Computing. 15(4). 474–475. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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