Pierre Brosselard

1.3k total citations
76 papers, 965 citations indexed

About

Pierre Brosselard is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Pierre Brosselard has authored 76 papers receiving a total of 965 indexed citations (citations by other indexed papers that have themselves been cited), including 74 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Pierre Brosselard's work include Silicon Carbide Semiconductor Technologies (71 papers), Semiconductor materials and devices (29 papers) and Electromagnetic Compatibility and Noise Suppression (19 papers). Pierre Brosselard is often cited by papers focused on Silicon Carbide Semiconductor Technologies (71 papers), Semiconductor materials and devices (29 papers) and Electromagnetic Compatibility and Noise Suppression (19 papers). Pierre Brosselard collaborates with scholars based in France, Spain and Sweden. Pierre Brosselard's co-authors include Philippe Godignon, X. Jordà, José del R. Millán, Amador Pérez‐Tomás, X. Perpiñà, Dominique Planson, V. Banu, Maxime Berthou, M. Vellvehı́ and Sigo Scharnholz and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Industrial Electronics.

In The Last Decade

Pierre Brosselard

68 papers receiving 936 citations

Peers

Countries citing papers authored by Pierre Brosselard

Since Specialization

Citations

This map shows the geographic impact of Pierre Brosselard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Pierre Brosselard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Pierre Brosselard more than expected).

Fields of papers citing papers by Pierre Brosselard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Pierre Brosselard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Pierre Brosselard. The network helps show where Pierre Brosselard may publish in the future.

Co-authorship network of co-authors of Pierre Brosselard

This figure shows the co-authorship network connecting the top 25 collaborators of Pierre Brosselard. A scholar is included among the top collaborators of Pierre Brosselard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Pierre Brosselard. Pierre Brosselard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications 2025 ·SPIRE - Sciences Po Institutional REpository ·(unknown), Camille Sonneville, (unknown), Pierre Brosselard, Éric Frayssinet, (unknown), Y. Cordier, Farid Medjdoub, Dominique Planson, Cyril Buttay	0
2	Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Pierre Brosselard, Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Camille Sonneville, (unknown), Mihai Lazar, (unknown), Sigo Scharnholz, Hervé Morel	0
3	Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature Sensors 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Dominique Tournier, (unknown), Pascal Bevilacqua, Pierre Brosselard, (unknown)	0
4	4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method 2022 ·Materials science forum ·Dominique Planson, Camille Sonneville, Pascal Bevilacqua, (unknown), (unknown), Dominique Tournier, Pierre Brosselard	0
5	Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes 2018 ·Materials science forum ·(unknown), (unknown), Pascal Bevilacqua, Dominique Planson, (unknown), Pierre Brosselard	1
6	4H-SiC VJFETs with Self-Aligned Contacts 2015 ·Materials science forum ·Konstantinos Zekentes, А. Ставринидис, George Konstantinidis, M. Kayambaki, (unknown), (unknown), Konstantin Vassilevski, Alton B. Horsfall, Nicolas G. Wright, Pierre Brosselard, (unknown), Mihai Lazar, Dominique Planson, Dominique Tournier, Nicolas Camara, (unknown)	2
7	SiC Mosfet for high temperature motor driving Applications 2014 ·(unknown), (unknown), Pierre Brosselard, (unknown)	1
8	Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts 2014 ·Materials science forum ·(unknown), Mihai Lazar, (unknown), (unknown), Véronique Soulière, Anne Henry, Dominique Planson, Gabriel Ferro, L. Kończewicz, Sylvie Contreras, Christian Brylinski, Pierre Brosselard	0
9	Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC 2014 ·Materials science forum ·(unknown), J. Montserrat, Pierre Brosselard, Anne Henry, Philippe Godignon	1
10	Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes 2013 ·Materials science forum ·(unknown), (unknown), (unknown), Dominique Planson, Maxime Berthou, Philippe Godignon, (unknown), Pierre Brosselard	6
11	3D TCAD Simulations for More Efficient SiC Power Devices Design 2013 ·ECS Transactions ·(unknown), Dominique Planson, Pierre Brosselard, Dominique Tournier, Christian Brylinski	2
12	Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications 2012 ·Materials science forum ·Hervé Peyre, Jianwu Sun, (unknown), Sandrine Juillaguet, Jawad Ul‐Hassan, Anne Henry, Sylvie Contreras, Pierre Brosselard, Jean Camassel	1
13	600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide 2012 ·Materials science forum ·(unknown), Farah Laariedh, (unknown), Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad Ul‐Hassan, Anne Henry, Erik Janzén, (unknown), Sigo Scharnholz	3
14	Integration of Temperature and Current Sensors in 4H-SiC VDMOS 2012 ·Materials science forum ·Maxime Berthou, Philippe Godignon, Pierre Brosselard, Dominique Tournier, José del R. Millán	2
15	Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State 2011 ·Materials science forum ·Mihai Lazar, (unknown), Farah Laariedh, Dominique Planson, Pierre Brosselard	5
16	Long term stability of packaged SiC Schottky diodes in the -170°C/+280°C temperature range 2010 ·Philippe Godignon, X. Jordà, V. Banu, M. Vellvehı́, José del R. Millán, Pierre Brosselard, (unknown), (unknown)	6
17	Silicon Carbide and Related Materials 2008 2009 ·Trans Tech Publications Ltd. eBooks ·Amador Pérez‐Tomás, Philippe Godignon, M. Vellvehı́, Pierre Brosselard	15
18	Electrical performance at high temperature and surge current of 1.2 kV power rectifiers: Comparison between Si PiN, 4H-SiC Schottky and JBS diodes 2008 ·José del R. Millán, V. Banu, Pierre Brosselard, X. Jordà, Amador Pérez‐Tomás, Philippe Godignon	9
19	Deep SiC etching with RIE 2006 ·Superlattices and Microstructures ·(unknown), (unknown), Pierre Brosselard, Christophe Raynaud, (unknown), Jean‐Louis Leclercq, (unknown), Sigo Scharnholz, (unknown)	30
20	Fabrication and Characterisation of High-Voltage SiC-Thyristors 2003 ·Materials science forum ·(unknown), Sigo Scharnholz, E. Spahn, Pierre Brosselard, (unknown), (unknown), Dominique Planson, Christophe Raynaud, Bernd Spangenberg, H. Kurz	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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