Robert E. Stahlbush

3.2k citations

143 papers · 2.7k indexed · h-index 29

Impact in

Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Electromagnetic Compatibility and Noise Suppression
Ceramics and Composites top 5%

Papers in

Electrical and Electronic Engineering 137
- Silicon Carbide Semiconductor Technologies 102
- Semiconductor materials and devices 83
- Silicon and Solar Cell Technologies 40
- Thin-Film Transistor Technologies 30
- Integrated Circuits and Semiconductor Failure Analysis 23
- Advancements in Semiconductor Devices and Circuit Design 19
Electronic, Optical and Magnetic Materials 33
- Copper Interconnects and Reliability 30

Co-authors: O. J. Glembocki Joshua D. Caldwell B. J. Mrstik Karl D. Hobart R.K. Lawrence Nadeemullah A. Mahadik M. Fatemi Arthur H. Edwards
Journals: Applied Physics Letters (18 papers)Journal of Electronic Materials (15 papers)IEEE Transactions on Nuclear Science (13 papers)Journal of Applied Physics (12 papers)Journal of The Electrochemical Society (4 papers)
Partner nations: United States China Israel

In The Last Decade

Robert E. Stahlbush

137 papers receiving 2.6k citations

Peers

Countries citing papers authored by Robert E. Stahlbush

Since Specialization

Citations

This map shows the geographic impact of Robert E. Stahlbush's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robert E. Stahlbush with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robert E. Stahlbush more than expected).

Fields of papers citing papers by Robert E. Stahlbush

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Robert E. Stahlbush. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robert E. Stahlbush. The network helps show where Robert E. Stahlbush may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Robert E. Stahlbush, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Robert E. Stahlbush Line = papers co-authored together Robert E. Stahlbush links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Mechanism of novel defect multiplication impacting high power 4H-SiC devices Materials & Design ·Nadeemullah A. Mahadik, Michael Dudley, Balaji Raghothamachar, Schepetilnikov Mikhail, Robert E. Stahlbush, Rebecca Nerenberg, Aivars J. Lelis, W. Sung	2024	1
2	Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability Journal of Applied Physics ·Yasutaka Miyajima, Harvey Guthrey, Steve Johnston, Andrew G. Norman, 忠雄水谷, Gerrit Patrick Van Onsem, Robert E. Stahlbush, Nadeemullah A. Mahadik, Brian P. Gorman, Mowafak Al‐Jassim	2023	5
3	Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers Scripta Materialia ·Nadeemullah A. Mahadik, Robert E. Stahlbush, Michael Dudley, Balaji Raghothamachar, Rebecca Nerenberg, Aivars J. Lelis, Woongje Sung	2023	6
4	Stacking Faults Originating from Star-Defects in 4H-SiC Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum ·Mathew John, Sri Yunita, Robert E. Stahlbush, Harvey Guthrey, Steve Johnston, 忠雄水谷, Claudia Naidu, Brian P. Gorman, Mowafak Al‐Jassim	2023	0
5	Evolution of lattice distortions in 4H-SiC wafers with varying doping Scientific Reports ·Nadeemullah A. Mahadik, Dorothee von Moreau, Stanislav Stoupin, Robert E. Stahlbush, Hyun Ho Yoo, Xueping Xu, Andrew Williams, Gary Ruland	2020	8
6	Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing Materials science forum ·Nadeemullah A. Mahadik, Robert E. Stahlbush, Eugene A. Imhoff, Marko J. Tadjer, Gary Ruland, Nikola Lopac	2016	10
7	Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers Materials science forum ·Nadeemullah A. Mahadik, Robert E. Stahlbush, Anindya Nath, Marko J. Tadjer, Eugene A. Imhoff, Edmonds Ac, Roberta Nipoti	2014	3
8	Multi-Cycle High Temperature Rapid Thermal Annealing for Dislocation Elimination in 4H-SiC Epitaxy ECS Transactions ·Nadeemullah A. Mahadik, Marko J. Tadjer, Robert E. Stahlbush, Eugene A. Imhoff, Boris N. Feigelson	2014	2
9	Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy Journal of Applied Physics ·Gilbert Gimbom, Rachael L. Myers‐Ward, Nadeemullah A. Mahadik, Robert E. Stahlbush, Virginia D. Wheeler, Luke O. Nyakiti, Charles R. Eddy, D. Kurt Gaskill, Hui Song, T. S. Sudarshan, Yoosuf N. Picard, Marek Skowroński	2013	8
10	Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers Materials science forum ·Nadeemullah A. Mahadik, Robert E. Stahlbush, Joshua D. Caldwell, Michael O’Loughlin, Albert A. Burk	2012	4
11	Expansion of Shockley Stacking faults in high doped 4H-SiC epilayers Robert E. Stahlbush, Nadeemullah A. Mahadik, Eugene A. Imhoff, Karl D. Hobart, Rachael L. Myers‐Ward, Charles R. Eddy, D. Kurt Gaskill, Fritz J. Kub	2011	2
12	Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC Journal of Electronic Materials ·Alexander J. Giles, Joshua D. Caldwell, Robert E. Stahlbush, Brett Hull, Nadeemullah A. Mahadik, O. J. Glembocki, Karl D. Hobart, 林初文	2010	10
13	Basal plane dislocation reduction in nitrogen doped 8° 4H-SiC epilayers Virginia D. Wheeler, Brenda L. VanMil, R.L. Myers-Ward, Charles R. Eddy, Robert E. Stahlbush, D. Kurt Gaskill	2009	1
14	Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes Journal of Electronic Materials ·Joshua D. Caldwell, O. J. Glembocki, Robert E. Stahlbush, Karl D. Hobart	2007	22
15	Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy Journal of Applied Physics ·Xuan Zhang, Marek Skowroński, Carmen Dieguez, Robert E. Stahlbush, Joseph J. Sumakeris, Michael J. Paisley, Michael O’Loughlin	2007	62
16	Characterization of defects in the drift region of 4H-SiC pin diodes via optical beam induced current Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Joshua D. Caldwell, Robert E. Stahlbush, O. J. Glembocki, Aina Llenas-Bladé, Karl D. Hobart	2006	10
17	Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy MRS Proceedings ·Indah Dwi Cahyani, Robert E. Stahlbush, Joshua D. Caldwell, Karl D. Hobart, Francis J. Kub, Joseph J. Sumakeris	2006	1
18	Characterization of Light Emission from 4H and 6H SiC MOSFETs MRS Proceedings ·Adriana Briones, Robert E. Stahlbush	2000	6
19	X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates Applied Physics Letters ·M. Fatemi, Robert E. Stahlbush	1991	64
20	Studies of a polymeric chromium phosphinate: Structure and static magnetic properties Physical review. B, Condensed matter ·Robert E. Stahlbush, 郑春松, A. K. Raychaudhuri, J. C. Scott, David T. Grubb, 龍人石橋	1981	5

About Robert E. Stahlbush

Robert E. Stahlbush is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Ceramics and Composites, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 143 papers that have together received 2.7k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (102 papers), Semiconductor materials and devices (83 papers), Silicon and Solar Cell Technologies (40 papers), Thin-Film Transistor Technologies (30 papers), Copper Interconnects and Reliability (30 papers), Semiconductor materials and interfaces (23 papers), Integrated Circuits and Semiconductor Failure Analysis (23 papers) and Advancements in Semiconductor Devices and Circuit Design (19 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.5k citations), Ceramics and Composites (184 citations), Atomic and Molecular Physics, and Optics (557 citations), Electronic, Optical and Magnetic Materials (312 citations) and Materials Chemistry (482 citations). Robert E. Stahlbush has collaborated with scholars based in United States, China and Israel. Frequent co-authors include O. J. Glembocki, Joshua D. Caldwell, B. J. Mrstik, Karl D. Hobart, R.K. Lawrence, Nadeemullah A. Mahadik, M. Fatemi, Arthur H. Edwards, D. Kurt Gaskill and Charles R. Eddy. Their work appears in journals such as Applied Physics Letters, Journal of Electronic Materials, IEEE Transactions on Nuclear Science, Journal of Applied Physics and Journal of The Electrochemical Society.

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