C.D. Brandt

1.3k total citations
49 papers, 1000 citations indexed

About

C.D. Brandt is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, C.D. Brandt has authored 49 papers receiving a total of 1000 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in C.D. Brandt's work include Silicon Carbide Semiconductor Technologies (39 papers), Semiconductor materials and devices (16 papers) and Electromagnetic Compatibility and Noise Suppression (15 papers). C.D. Brandt is often cited by papers focused on Silicon Carbide Semiconductor Technologies (39 papers), Semiconductor materials and devices (16 papers) and Electromagnetic Compatibility and Noise Suppression (15 papers). C.D. Brandt collaborates with scholars based in United States, Germany and China. C.D. Brandt's co-authors include Anant Agarwal, R.R. Siergiej, L.B. Rowland, R.C. Clarke, S. Sriram, Jeff B. Casady, Albert A. Burk, V. Balakrishna, A. M. Hennel and H. C. Gatos and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C.D. Brandt

45 papers receiving 937 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C.D. Brandt United States 18 899 284 177 134 118 49 1000
M. F. MacMillan United States 16 672 0.7× 232 0.8× 155 0.9× 182 1.4× 181 1.5× 50 813
Tamara Isaacs‐Smith United States 19 1.0k 1.1× 305 1.1× 159 0.9× 246 1.8× 259 2.2× 81 1.2k
S. Sriram United States 14 606 0.7× 180 0.6× 99 0.6× 85 0.6× 63 0.5× 53 670
Marilena Vivona Italy 16 763 0.8× 318 1.1× 96 0.5× 129 1.0× 103 0.9× 56 839
K. G. Irvine United States 15 966 1.1× 363 1.3× 338 1.9× 122 0.9× 175 1.5× 35 1.1k
Andrew J. Trunek United States 13 488 0.5× 120 0.4× 136 0.8× 122 0.9× 143 1.2× 53 596
Shoichi Onda Japan 14 643 0.7× 130 0.5× 83 0.5× 167 1.2× 108 0.9× 40 760
K. D. Mynbaev Russia 15 747 0.8× 445 1.6× 167 0.9× 312 2.3× 105 0.9× 139 854
N. Nordell Sweden 20 1.9k 2.1× 654 2.3× 151 0.9× 204 1.5× 298 2.5× 66 2.0k
Masanori Inada Japan 10 519 0.6× 248 0.9× 78 0.4× 447 3.3× 77 0.7× 21 739

Countries citing papers authored by C.D. Brandt

Since Specialization
Citations

This map shows the geographic impact of C.D. Brandt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.D. Brandt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.D. Brandt more than expected).

Fields of papers citing papers by C.D. Brandt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.D. Brandt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.D. Brandt. The network helps show where C.D. Brandt may publish in the future.

Co-authorship network of co-authors of C.D. Brandt

This figure shows the co-authorship network connecting the top 25 collaborators of C.D. Brandt. A scholar is included among the top collaborators of C.D. Brandt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.D. Brandt. C.D. Brandt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Guth, Karsten, et al.. (2003). Improved grain boundary currents in textured YBa2Cu3O thin films on bicrystalline Ni substrates. Superconductor Science and Technology. 17(1). 65–70. 4 indexed citations
2.
Seshadri, S. R., Jeff B. Casady, Anant Agarwal, et al.. (2002). Turn-off characteristics of 1000 V SiC gate-turn-off thyristors. 131–134. 3 indexed citations
3.
Agarwal, Anant, R.R. Siergiej, S. R. Seshadri, et al.. (2002). A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures. 119–122. 19 indexed citations
4.
5.
Sriram, S., T.J. Smith, L.B. Rowland, et al.. (2002). High power operation of 4H-SiC MESFETs at 10 GHz. 138–139. 1 indexed citations
6.
7.
Rowland, L.B., Albert A. Burk, & C.D. Brandt. (1998). Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC. Materials science forum. 264-268. 115–118. 7 indexed citations
8.
Casady, Jeff B., Anant Agarwal, S. R. Seshadri, et al.. (1998). 4H-SiC power devices for use in power electronic motor control. Solid-State Electronics. 42(12). 2165–2176. 48 indexed citations
9.
Siergiej, R.R., Jeff B. Casady, Anant Agarwal, et al.. (1997). 1000 V 4H-SiC gate turn off (GTO) thyristor. 2 xv1i. 363–366. 6 indexed citations
10.
Agarwal, Anant, Jeff B. Casady, L.B. Rowland, et al.. (1997). 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's). IEEE Electron Device Letters. 18(11). 518–520. 67 indexed citations
11.
Sriram, S., R.R. Siergiej, R.C. Clarke, Anant Agarwal, & C.D. Brandt. (1997). SiC for Microwave Power Transistors. physica status solidi (a). 162(1). 441–457. 47 indexed citations
12.
Gaskill, D. Kurt, C.D. Brandt, & R. J. Nemanich. (1996). III-Nitride, SiC and Diamond Materials for Electronic Devices. Symposium Held April 8-12 1996, San Francisco, California, U.S.A. Volume 423.. 1 indexed citations
13.
Perkins, J. F., et al.. (1996). SiC High Temperature Electronics for Next Generation Aircraft Controls Systems. Volume 5: Manufacturing Materials and Metallurgy; Ceramics; Structures and Dynamics; Controls, Diagnostics and Instrumentation; Education; General. 1 indexed citations
14.
Agarwal, Anant, R.R. Siergiej, S. R. Seshadri, et al.. (1996). Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures. MRS Proceedings. 423. 16 indexed citations
15.
Gaskill, D. Kurt, C.D. Brandt, & R. J. Nemanich. (1996). III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. Medical Entomology and Zoology. 4 indexed citations
16.
Hobgood, H. McD., D.L. Barrett, R.C. Clarke, et al.. (1994). Large diameter 6H-SiC for microwave device applications. Journal of Crystal Growth. 137(1-2). 181–186. 72 indexed citations
17.
Eldridge, G.W., D.L. Barrett, Albert A. Burk, et al.. (1993). High power silicon carbide IMPATT diode development. 1 indexed citations
18.
Brandt, C.D., et al.. (1989). Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP. Journal of Applied Physics. 65(9). 3459–3469. 26 indexed citations
19.
Hennel, A. M., et al.. (1987). Optical and electronic properties of vanadium in gallium arsenide. Journal of Applied Physics. 62(1). 163–170. 27 indexed citations
20.
Brandt, C.D., A. M. Hennel, L. M. Pawlowicz, et al.. (1986). New semi-insulating InP: Titanium midgap donors. Applied Physics Letters. 48(17). 1162–1164. 41 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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