Edward Van Brunt

2.0k citations

58 papers · 1.6k indexed · h-index 20

Co-authors: John W. Palmour Scott T. Allen Sei‐Hyung Ryu Jim Richmond Michael O’Loughlin Vipindas Pala Lin Cheng Charles Scozzie
Topics: Silicon Carbide Semiconductor Technologies (57 papers)Multilevel Inverters and Converters (21 papers)Electromagnetic Compatibility and Noise Suppression (17 papers)
Cited by: Electrical and Electronic Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials
Journals: Journal of Applied Physics IEEE Transactions on Electron Devices IEEE Electron Device Letters
Partner nations: United States China Germany

In The Last Decade

Edward Van Brunt

57 papers receiving 1.6k citations

Peers

Countries citing papers authored by Edward Van Brunt

Since Specialization

Citations

This map shows the geographic impact of Edward Van Brunt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Edward Van Brunt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Edward Van Brunt more than expected).

Fields of papers citing papers by Edward Van Brunt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Edward Van Brunt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Edward Van Brunt. The network helps show where Edward Van Brunt may publish in the future.

Co-authorship network of co-authors of Edward Van Brunt

This figure shows the co-authorship network connecting the top 25 collaborators of Edward Van Brunt. A scholar is included among the top collaborators of Edward Van Brunt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Edward Van Brunt. Edward Van Brunt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	UIS Ruggedness of Parallel 4H-SiC MOSFETs 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Philipp Steinmann,(unknown),(unknown),(unknown),Kevin J. Myers,(unknown),Jae Hyung Park,(unknown),(unknown),Edward Van Brunt	1
2	Reliability and Standardization for SiC Power Devices 2023 ·Materials science forum ·D. A. Gajewski,Satyaki Ganguly,Daniel J. Lichtenwalner,Edward Van Brunt,Brett Hull,Scott T. Allen,John W. Palmour	3
3	Implementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC Materials 2023 ·Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum ·Robert L. Leonard,Matthew Conrad,Edward Van Brunt,(unknown),(unknown)	0
4	High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes 2023 ·(unknown),(unknown),Jae Hyung Park,(unknown),(unknown),Shadi Sabri,Edward Van Brunt,Brett Hull,Daniel J. Lichtenwalner,D. A. Gajewski,John W. Palmour	4
5	Reliability studies of SiC vertical power MOSFETs 2018 ·Daniel J. Lichtenwalner,Brett Hull,Edward Van Brunt,Shadi Sabri,D. A. Gajewski,D.E. Grider,Scott T. Allen,John W. Palmour,Akin Akturk,J.M. McGarrity	52
6	Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor 2017 ·Materials science forum ·Sei‐Hyung Ryu,Daniel J. Lichtenwalner,Edward Van Brunt,Craig Capell,Michael O’Loughlin,Charlotte Jonas,(unknown),(unknown),Jim Richmond,Albert A. Burk,Brett Hull,Heather O’Brien,Aderinto Ogunniyi,Aivars J. Lelis,Jeff B. Casady,David Grider,Scott T. Allen,John W. Palmour	10
7	Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodes 2017 ·(unknown),Kasunaidu Vechalapu,Subhashish Bhattacharya,Victor Veliadis,Edward Van Brunt,David Grider,Shadi Sabri,Brett Hull	18
8	Ultra-low (1.25mΩ) On-Resistance 900V SiC 62mm Half- Bridge Power Modules Using New 10mΩ SiC MOSFETs 2016 ·(unknown),Vipindas Pala,Edward Van Brunt,Brett Hull,Sei‐Hyung Ryu,Gangyao Wang,Jim Richmond,Scott T. Allen,D.E. Grider,John W. Palmour,(unknown),Brice McPherson,K.J. Olejniczak,Brandon Passmore,(unknown)	4
9	New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications 2015 ·(unknown),Vipindas Pala,Daniel J. Lichtenwalner,Edward Van Brunt,Brett Hull,Gangyao Wang,Jim Richmond,Scott T. Allen,D.E. Grider,John W. Palmour	79
10	Solid-state Marx generator with 24 KV 4H-SIC IGBTs 2015 ·(unknown),Heather O’Brien,Edward Van Brunt,Aderinto Ogunniyi,Charles Scozzie	9
11	Comparative evaluation of 15 kV SiC MOSFET and 15 kV SiC IGBT for medium voltage converter under same dv/dt conditions 2015 ·Kasunaidu Vechalapu,Subhashish Bhattacharya,Edward Van Brunt,Sei‐Hyung Ryu,D.E. Grider,John W. Palmour	34
12	Development of medium voltage SiC power technology for next generation power electronics 2015 ·Edward Van Brunt,David Grider,Vipindas Pala,Sei‐Hyung Ryu,Jeff B. Casady,John W. Palmour	9
13	27 kV, 20 A 4H-SiC n-IGBTs 2015 ·Materials science forum ·Edward Van Brunt,Lin Cheng,Michael O’Loughlin,Jim Richmond,Vipindas Pala,John W. Palmour,C. W. Tipton,Charles Scozzie	115
14	10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems 2014 ·Vipindas Pala,Edward Van Brunt,Lin Cheng,Michael O’Loughlin,Jim Richmond,Albert A. Burk,Scott T. Allen,David Grider,John W. Palmour,Charles Scozzie	127
15	22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation 2014 ·Edward Van Brunt,Scott T. Allen,Albert A. Burk,John W. Palmour,Charles Scozzie,Lin Cheng,Michael O’Loughlin,Craig Capell,Charlotte Jonas,(unknown),Jim Richmond,Vipindas Pala,Sei‐Hyung Ryu	68
16	Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV 2014 ·John W. Palmour,Lin Cheng,Vipindas Pala,Edward Van Brunt,Daniel J. Lichtenwalner,(unknown),Jim Richmond,Michael O’Loughlin,Sei‐Hyung Ryu,Scott T. Allen,Albert A. Burk,Charles Scozzie	241
17	Experimental switching frequency limits of 15 kV SiC N-IGBT module 2014 ·Arun Kadavelugu,Subhashish Bhattacharya,Sei‐Hyung Ryu,Edward Van Brunt,D.E. Grider,Scott Leslie	26
18	A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers 2013 ·Journal of Electronic Materials ·Edward Van Brunt,Anant Agarwal,(unknown),Lin Cheng,Michael O’Loughlin,John W. Palmour,А. В. Суворов	1
19	Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices 2012 ·IEEE Electron Device Letters ·(unknown),Edward Van Brunt,B. Jayant Baliga,Alex Q. Huang	13
20	Dual-GCT design criteria and voltage scaling 2012 ·Edward Van Brunt,Alex Q. Huang,(unknown),Rik W. De Doncker	4

About Edward Van Brunt

Edward Van Brunt is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Control and Systems Engineering, having authored 58 papers that have together received 1.6k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (57 papers), Multilevel Inverters and Converters (21 papers) and Electromagnetic Compatibility and Noise Suppression (17 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.6k citations), Condensed Matter Physics (56 citations) and Electronic, Optical and Magnetic Materials (70 citations). Edward Van Brunt has collaborated with scholars based in United States, China and Germany. Frequent co-authors include John W. Palmour, Scott T. Allen, Sei‐Hyung Ryu, Jim Richmond, Michael O’Loughlin, Vipindas Pala, Lin Cheng, Charles Scozzie, Albert A. Burk and Daniel J. Lichtenwalner. Their work appears in journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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