Edward Van Brunt

2.0k total citations
58 papers, 1.6k citations indexed

About

Edward Van Brunt is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Control and Systems Engineering. According to data from OpenAlex, Edward Van Brunt has authored 58 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 4 papers in Control and Systems Engineering. Recurrent topics in Edward Van Brunt's work include Silicon Carbide Semiconductor Technologies (57 papers), Multilevel Inverters and Converters (21 papers) and Electromagnetic Compatibility and Noise Suppression (17 papers). Edward Van Brunt is often cited by papers focused on Silicon Carbide Semiconductor Technologies (57 papers), Multilevel Inverters and Converters (21 papers) and Electromagnetic Compatibility and Noise Suppression (17 papers). Edward Van Brunt collaborates with scholars based in United States, China and Germany. Edward Van Brunt's co-authors include John W. Palmour, Scott T. Allen, Sei‐Hyung Ryu, Jim Richmond, Michael O’Loughlin, Vipindas Pala, Lin Cheng, Charles Scozzie, Albert A. Burk and Daniel J. Lichtenwalner and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Edward Van Brunt

57 papers receiving 1.6k citations

Peers

Edward Van Brunt

EEE

AMPO

CSE

EOMM

CMP

Vipindas Pala United States

Jim Richmond United States

Muhammad Nawaz Sweden

Craig Capell United States

Noriyuki Iwamuro Japan

G. Busatto Italy

Xuan Li China

Robert Callanan United States

Tatsuhiko Fujihira Japan

Saeed Jahdi United Kingdom

Vipindas Pala United States

Edward Van Brunt

1.0k ×0.6

EEE

65 ×0.7

AMPO

36 ×0.5

CSE

94 ×1.3

EOMM

76 ×1.4

CMP

Citations per year, relative to Edward Van Brunt Edward Van Brunt (= 1×) peers Vipindas Pala

Countries citing papers authored by Edward Van Brunt

Since Specialization

Citations

This map shows the geographic impact of Edward Van Brunt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Edward Van Brunt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Edward Van Brunt more than expected).

Fields of papers citing papers by Edward Van Brunt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Edward Van Brunt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Edward Van Brunt. The network helps show where Edward Van Brunt may publish in the future.

Co-authorship network of co-authors of Edward Van Brunt

This figure shows the co-authorship network connecting the top 25 collaborators of Edward Van Brunt. A scholar is included among the top collaborators of Edward Van Brunt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Edward Van Brunt. Edward Van Brunt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Steinmann, Philipp, et al.. (2024). UIS Ruggedness of Parallel 4H-SiC MOSFETs. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 361. 65–69. 1 indexed citations

Gajewski, D. A., Satyaki Ganguly, Daniel J. Lichtenwalner, et al.. (2023). Reliability and Standardization for SiC Power Devices. Materials science forum. 1092. 179–186. 3 indexed citations

Leonard, Robert L., et al.. (2023). Implementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC Materials. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 426. 3–9.

Park, Jae Hyung, Shadi Sabri, Edward Van Brunt, et al.. (2023). High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes. 1–4. 4 indexed citations

Lichtenwalner, Daniel J., Brett Hull, Edward Van Brunt, et al.. (2018). Reliability studies of SiC vertical power MOSFETs. 2B.2–1. 52 indexed citations

Ryu, Sei‐Hyung, Daniel J. Lichtenwalner, Edward Van Brunt, et al.. (2017). Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor. Materials science forum. 897. 587–590. 10 indexed citations

Vechalapu, Kasunaidu, Subhashish Bhattacharya, Victor Veliadis, et al.. (2017). Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodes. 208–212. 18 indexed citations

Pala, Vipindas, Edward Van Brunt, Brett Hull, et al.. (2016). Ultra-low (1.25mΩ) On-Resistance 900V SiC 62mm Half- Bridge Power Modules Using New 10mΩ SiC MOSFETs. 1–8. 4 indexed citations

Pala, Vipindas, Daniel J. Lichtenwalner, Edward Van Brunt, et al.. (2015). New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications. 1–8. 79 indexed citations

10.

O’Brien, Heather, et al.. (2015). Solid-state Marx generator with 24 KV 4H-SIC IGBTs. 1–5. 9 indexed citations

11.

Vechalapu, Kasunaidu, Subhashish Bhattacharya, Edward Van Brunt, et al.. (2015). Comparative evaluation of 15 kV SiC MOSFET and 15 kV SiC IGBT for medium voltage converter under same dv/dt conditions. 927–934. 34 indexed citations

12.

Brunt, Edward Van, David Grider, Vipindas Pala, et al.. (2015). Development of medium voltage SiC power technology for next generation power electronics. 72–74. 9 indexed citations

13.

Brunt, Edward Van, Lin Cheng, Michael O’Loughlin, et al.. (2015). 27 kV, 20 A 4H-SiC n-IGBTs. Materials science forum. 821-823. 847–850. 115 indexed citations

14.

Pala, Vipindas, Edward Van Brunt, Lin Cheng, et al.. (2014). 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems. 449–454. 127 indexed citations

15.

Brunt, Edward Van, Scott T. Allen, Albert A. Burk, et al.. (2014). 22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation. 358–361. 68 indexed citations

16.

Palmour, John W., Lin Cheng, Vipindas Pala, et al.. (2014). Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV. 79–82. 241 indexed citations

17.

Kadavelugu, Arun, Subhashish Bhattacharya, Sei‐Hyung Ryu, et al.. (2014). Experimental switching frequency limits of 15 kV SiC N-IGBT module. 3726–3733. 26 indexed citations

18.

Brunt, Edward Van, Anant Agarwal, Lin Cheng, et al.. (2013). A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers. Journal of Electronic Materials. 43(4). 809–813. 1 indexed citations

19.

Brunt, Edward Van, et al.. (2012). Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices. IEEE Electron Device Letters. 33(11). 1592–1594. 13 indexed citations

20.

Brunt, Edward Van, et al.. (2012). Dual-GCT design criteria and voltage scaling. 2596–2603. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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