Robert Callanan

1.4k total citations
35 papers, 1.2k citations indexed

About

Robert Callanan is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Robert Callanan has authored 35 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 4 papers in Electronic, Optical and Magnetic Materials and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Robert Callanan's work include Silicon Carbide Semiconductor Technologies (34 papers), Multilevel Inverters and Converters (18 papers) and Semiconductor materials and devices (16 papers). Robert Callanan is often cited by papers focused on Silicon Carbide Semiconductor Technologies (34 papers), Multilevel Inverters and Converters (18 papers) and Semiconductor materials and devices (16 papers). Robert Callanan collaborates with scholars based in United States, China and United Kingdom. Robert Callanan's co-authors include Anant Agarwal, Mrinal K. Das, John W. Palmour, Alex Q. Huang, Fatima Husna, Qingchun Zhang, Tiefu Zhao, Jun Wang, Sei‐Hyung Ryu and Jun Li and has published in prestigious journals such as IEEE Transactions on Power Electronics, IEEE Transactions on Industry Applications and IEEE Transactions on Electron Devices.

In The Last Decade

Robert Callanan

35 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Robert Callanan United States	19	1.2k	75	69	43	38	35	1.2k
Edward Van Brunt United States	20	1.6k 1.4×	72 1.0×	92 1.3×	45 1.0×	56 1.5×	58	1.6k
Craig Capell United States	20	1.1k 0.9×	87 1.2×	96 1.4×	22 0.5×	26 0.7×	48	1.1k
David Grider United States	16	1.1k 0.9×	85 1.1×	25 0.4×	40 0.9×	22 0.6×	33	1.1k
Saeed Jahdi United Kingdom	15	921 0.8×	51 0.7×	58 0.8×	55 1.3×	81 2.1×	80	957
Victor Veliadis United States	16	751 0.6×	72 1.0×	102 1.5×	25 0.6×	49 1.3×	82	799
Kai Tian China	15	805 0.7×	117 1.6×	27 0.4×	39 0.9×	73 1.9×	35	833
Aderinto Ogunniyi United States	12	730 0.6×	127 1.7×	69 1.0×	19 0.4×	26 0.7×	70	739
Tatsuhiko Fujihira Japan	11	1.0k 0.9×	33 0.4×	84 1.2×	33 0.8×	142 3.7×	32	1.1k
Vipindas Pala United States	13	1.0k 0.9×	36 0.5×	65 0.9×	26 0.6×	76 2.0×	31	1.1k
C. Abbate Italy	15	658 0.6×	31 0.4×	29 0.4×	33 0.8×	125 3.3×	46	674

Countries citing papers authored by Robert Callanan

Since Specialization

Citations

This map shows the geographic impact of Robert Callanan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robert Callanan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robert Callanan more than expected).

Fields of papers citing papers by Robert Callanan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Robert Callanan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robert Callanan. The network helps show where Robert Callanan may publish in the future.

Co-authorship network of co-authors of Robert Callanan

This figure shows the co-authorship network connecting the top 25 collaborators of Robert Callanan. A scholar is included among the top collaborators of Robert Callanan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Robert Callanan. Robert Callanan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Callanan, Robert, et al.. (2013). Third quadrant behavior of SiC MOSFETs. 1250–1253. 33 indexed citations

Ryu, Sei‐Hyung, Lin Cheng, Sarit Dhar, et al.. (2012). Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications. Materials science forum. 717-720. 1059–1064. 10 indexed citations

Ryu, Sei‐Hyung, Lin Cheng, Sarit Dhar, et al.. (2011). 3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications. 227–230. 16 indexed citations

Hull, Brett, et al.. (2011). 1700V 4H-SiC MOSFETs and Schottky diodes for next generation power conversion applications. 1042–1048. 4 indexed citations

Callanan, Robert, Anant Agarwal, Albert A. Burk, et al.. (2010). 10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC. Materials science forum. 645-648. 1025–1028. 8 indexed citations

Palmour, John W., et al.. (2010). SiC power devices for Smart Grid systems. 1006–1013. 36 indexed citations

Zhang, Qingchun, Robert Callanan, Mrinal K. Das, et al.. (2010). SiC Power Devices for Microgrids. IEEE Transactions on Power Electronics. 25(12). 2889–2896. 141 indexed citations

Agarwal, Anant, Robert Callanan, Craig Capell, et al.. (2010). 9 kV, 1 cm2 SiC Gate Turn-Off Thyristors. Materials science forum. 645-648. 1017–1020. 19 indexed citations

Ogunniyi, Aderinto, Heather O’Brien, Aivars J. Lelis, et al.. (2010). The benefits and current progress of SiC SGTOs for pulsed power applications. Solid-State Electronics. 54(10). 1232–1237. 23 indexed citations

10.

Zhang, Jincai, Mrinal K. Das, Sei‐Hyung Ryu, et al.. (2010). 4H-SiC DMOSFETs for power conversion applications successes and ongoing challenges. 197–200. 2 indexed citations

11.

Agarwal, Anant, Craig Capell, Jim Richmond, et al.. (2009). 9 kV, 1 cm×1 cm SiC super gto technology development for pulse power. 264–269. 31 indexed citations

12.

Cheng, Lin, Sei‐Hyung Ryu, Charlotte Jonas, et al.. (2009). 3300 V, 30 A 4H-SiC power DMOSFETs. 1–2. 7 indexed citations

13.

Callanan, Robert, Anant Agarwal, Albert A. Burk, et al.. (2008). Recent progress in SiC DMOSFETs and JBS diodes at Cree. 2885–2890. 81 indexed citations

14.

Agarwal, Anant, Qingchun Zhang, Albert A. Burk, Robert Callanan, & Sudip K. Mazumder. (2008). Prospects of bipolar power devices in silicon carbide. 2879–2884. 7 indexed citations

15.

Zhang, Qingchun, et al.. (2008). 12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC. IEEE Electron Device Letters. 29(9). 1027–1029. 54 indexed citations

16.

Zhang, Qingchun, Alex Q. Huang, Jun Wang, et al.. (2008). Design and Characterization of High-Voltage 4H-SiC p-IGBTs. IEEE Transactions on Electron Devices. 55(8). 1912–1919. 41 indexed citations

17.

Zhang, Qingchun, Charlotte Jonas, Michael O’Loughlin, et al.. (2008). A 10-kV Monolithic Darlington Transistor With $\beta_{ \rm forced}$ of 336 in 4H-SiC. IEEE Electron Device Letters. 30(2). 142–144. 11 indexed citations

18.

Husna, Fatima, Anant Agarwal, Aivars J. Lelis, et al.. (2007). Status of 1200V 4H-SiC Power DMOSFETs. 457 460. 1–2. 10 indexed citations

19.

Jonas, Charlotte, Craig Capell, Qingchun Zhang, et al.. (2007). 1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70. Journal of Electronic Materials. 37(5). 662–665. 19 indexed citations

20.

Jonas, Charlotte, Robert Callanan, Joseph J. Sumakeris, et al.. (2007). New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C. 281–284. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact