Robert Callanan

1.4k citations

35 papers · 1.2k indexed · h-index 19

Impact in

Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Multilevel Inverters and Converters
- Electromagnetic Compatibility and Noise Suppression
- Advanced DC-DC Converters
- Semiconductor materials and devices
- HVDC Systems and Fault Protection
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics
Condensed Matter Physics

Papers in ⓘ

Electrical and Electronic Engineering 35
- Silicon Carbide Semiconductor Technologies 34
- Multilevel Inverters and Converters 18
- Semiconductor materials and devices 16
- Electromagnetic Compatibility and Noise Suppression 8
- HVDC Systems and Fault Protection 5
- Advanced DC-DC Converters 4
- Advancements in Semiconductor Devices and Circuit Design 3
Electronic, Optical and Magnetic Materials 4
- Copper Interconnects and Reliability 3

Co-authors: Anant Agarwal (24 shared papers)Mrinal K. Das (16 shared papers)John W. Palmour (19 shared papers)Fatima Husna (7 shared papers)Alex Q. Huang (5 shared papers)Qingchun Zhang (9 shared papers)Tiefu Zhao (3 shared papers)Jun Wang (3 shared papers)
Journals: IEEE Electron Device Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)Journal of Electronic Materials (1 paper)IEEE Transactions on Industry Applications (1 paper)IEEE Transactions on Power Electronics (1 paper)
Partner nations: United States China United Kingdom

In The Last Decade

Robert Callanan

35 papers receiving 1.1k citations

Peers

Countries citing papers authored by Robert Callanan

Since Specialization

Citations

This map shows the geographic impact of Robert Callanan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robert Callanan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robert Callanan more than expected).

Fields of papers citing papers by Robert Callanan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Robert Callanan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robert Callanan. The network helps show where Robert Callanan may publish in the future.

Co-authors

The 25 scholars most cited alongside Robert Callanan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Robert Callanan Line = papers co-authored together Robert Callanan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 35 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Characterization, Modeling, and Application of 10-kV SiC MOSFET IEEE Transactions on Electron Devices ·Jun Wang, Tiefu Zhao, Jun Li, Alex Q. Huang, Robert Callanan, Fatima Husna, Anant Agarwal	2008	327
2	SiC Power Devices for Microgrids IEEE Transactions on Power Electronics ·Qingchun Zhang, Robert Callanan, Mrinal K. Das, Sei‐Hyung Ryu, Anant Agarwal, John W. Palmour	2010	141
3	Recent progress in SiC DMOSFETs and JBS diodes at Cree Robert Callanan, Anant Agarwal, Albert A. Burk, Mrinal K. Das, Brett Hull, F. Husna, A. Powell, Jim Richmond, Sei‐Hyung Ryu, Qingchun Zhang	2008	81
4	10-kV SiC MOSFET-Based Boost Converter IEEE Transactions on Industry Applications ·Jun Wang, Xiaohu Zhou, Jun Li, Tiefu Zhao, Alex Q. Huang, Robert Callanan, F. Husna, Anant Agarwal	2009	59
5	12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC IEEE Electron Device Letters ·Qingchun Zhang, Mrinal K. Das, Joe Sumakeris, Robert Callanan, Anant Agarwal	2008	54
6	A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching Materials science forum ·Mrinal K. Das, Q. Jon Zhang, Robert Callanan, Craig Capell, Jack Clayton, Matthew Donofrio, Sarah K. Haney, Fatima Husna, Charlotte Jonas, Jim Richmond, Joseph J. Sumakeris	2008	47
7	Design and Characterization of High-Voltage 4H-SiC p-IGBTs IEEE Transactions on Electron Devices ·Qingchun Zhang, Alex Q. Huang, Jun Wang, Charlotte Jonas, Robert Callanan, Joseph J. Sumakeris, Sei‐Hyung Ryu, Mrinal K. Das, Anant Agarwal, John W. Palmour	2008	41
8	SiC power devices for Smart Grid systems John W. Palmour, J. Q. Zhang, Mrinal K. Das, Robert Callanan, Anmol Agarwal, D.E. Grider	2010	36
9	20 A, 1200 V 4H-SiC DMOSFETs for energy conversion systems Brett Hull, Mrinal K. Das, F. Husna, Robert Callanan, Abhishek Agarwal, John W. Palmour	2009	35
10	Third quadrant behavior of SiC MOSFETs Robert Callanan, Julius Rice, John W. Palmour	2013	33
11	9 kV, 1 cm×1 cm SiC super gto technology development for pulse power Anant Agarwal, Craig Capell, Q. Zhang, Jim Richmond, Robert Callanan, Michael O’Loughlin, Albert A. Burk, Charles L. Melcher, John W. Palmour, V.A.K. Temple, Heather O’Brien, Charles Scozzie	2009	31
12	State of the Art 10 kV NMOS Transistors Mrinal K. Das, Robert Callanan, D.C. Capell, Brett Hull, Fatima Husna, James Richmond, Michael O’Loughlin, Michael J. Paisley, A. Powell, Qingchun Zhang	2008	25
13	Performance of 60 A, 1200 V 4H-SiC DMOSFETs Materials science forum ·Brett Hull, Charlotte Jonas, Sei‐Hyung Ryu, Mrinal K. Das, Michael O’Loughlin, Fatima Husna, Robert Callanan, Jim Richmond, Anant Agarwal, John W. Palmour, Charles Scozzie	2009	25
14	The benefits and current progress of SiC SGTOs for pulsed power applications Solid-State Electronics ·Aderinto Ogunniyi, Heather O’Brien, Aivars J. Lelis, Charles Scozzie, William Shaheen, Anant Agarwal, Jincai Zhang, Robert Callanan, V.A.K. Temple	2010	23
15	Design of 400V class inverter drive using SiC 6-in-1 power module Kohei Shirabe, Mahesh Swamy, Jun-Koo Kang, Masaki Hisatsune, Mrinal K. Das, Robert Callanan, Henry Taisun Lin	2013	20
16	Critical Technical Issues in High Voltage SiC Power Devices Materials science forum ·Anant Agarwal, Albert A. Burk, Robert Callanan, Craig Capell, Mrinal K. Das, Sarah K. Haney, Brett Hull, Charlotte Jonas, Michael O’Loughlin, Michael O`Neil, John W. Palmour, Adrian R. Powell, Jim Richmond, Sei‐Hyung Ryu, Robert E. Stahlbush, Joseph J. Sumakeris, Q. Jon Zhang	2008	20
17	1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70 Journal of Electronic Materials ·Charlotte Jonas, Craig Capell, Al Burk, Qingchun Zhang, Robert Callanan, Anant Agarwal, Bruce Geil, Charles Scozzie	2007	19
18	9 kV, 1 cm<sup>2</sup> SiC Gate Turn-Off Thyristors Materials science forum ·Anant Agarwal, Qing Chun Jon Zhang, Robert Callanan, Craig Capell, Albert A. Burk, Michael O’Loughlin, John W. Palmour, V.A.K. Temple, Robert E. Stahlbush, Joshua D. Caldwell, Heather O'Brian, Charles Scozzie	2010	19
19	4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield Qingchun Zhang, Al Burk, Fatima Husna, Robert Callanan, Anant Agarwal, John W. Palmour, Robert E. Stahlbush, Charles Scozzie	2009	18
20	3.7 mΩ-cm<sup>2</sup>, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications Sei‐Hyung Ryu, Lin Cheng, Sarit Dhar, Craig Capell, Charlotte Jonas, Robert Callanan, Anant Agarwal, John W. Palmour, Aivars J. Lelis, Charles Scozzie, Bruce Geil	2011	16

About Robert Callanan

Robert Callanan is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Control and Systems Engineering and Mechanical Engineering, having authored 35 papers that have together received 1.2k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (34 papers), Multilevel Inverters and Converters (18 papers), Semiconductor materials and devices (16 papers), Electromagnetic Compatibility and Noise Suppression (8 papers), HVDC Systems and Fault Protection (5 papers), Advanced DC-DC Converters (4 papers), Copper Interconnects and Reliability (3 papers) and Advancements in Semiconductor Devices and Circuit Design (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.2k citations), Condensed Matter Physics (38 citations), Control and Systems Engineering (75 citations), Ceramics and Composites (16 citations) and Atomic and Molecular Physics, and Optics (69 citations). Robert Callanan has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include Anant Agarwal, Mrinal K. Das, John W. Palmour, Fatima Husna, Alex Q. Huang, Qingchun Zhang, Tiefu Zhao, Jun Wang, Sei‐Hyung Ryu and Jun Li. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Electronic Materials, IEEE Transactions on Industry Applications and IEEE Transactions on Power Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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