Brett Hull

2.8k citations

116 papers · 2.3k indexed · h-index 26

Electrical and Electronic Engineering top 2%
- Silicon Carbide Semiconductor Technologies 110
- Semiconductor materials and devices 48
- Multilevel Inverters and Converters 29
- Electromagnetic Compatibility and Noise Suppression 24
- HVDC Systems and Fault Protection 17
- Advancements in Semiconductor Devices and Circuit Design 15
Condensed Matter Physics top 10%
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 11
Ceramics and Composites
Control and Systems Engineering
- Pulsed Power Technology Applications 11

Co-authors: John W. Palmour Scott T. Allen Jim Richmond Sei‐Hyung Ryu Mrinal K. Das Daniel J. Lichtenwalner Edward Van Brunt D.E. Grider
Cited by: Electrical and Electronic Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials
Journals: Materials science forum (43 papers)Solid-State Electronics (4 papers)Journal of Applied Physics (3 papers)
Partner nations: United States China Russia

In The Last Decade

Brett Hull

115 papers receiving 2.2k citations

Peers

Countries citing papers authored by Brett Hull

Since Specialization

Citations

This map shows the geographic impact of Brett Hull's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Brett Hull with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Brett Hull more than expected).

Fields of papers citing papers by Brett Hull

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Brett Hull. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Brett Hull. The network helps show where Brett Hull may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Brett Hull, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Brett Hull Line = papers co-authored together Brett Hull links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Investigation into Relationship of the Switching Performance and Short-Circuit Withstand Time on 1.2 kV 4H-SiC Power MOSFETs Mark Dodici,Jae Hyung Park,Shadi Sabri,T. Kubo,Brett Hull,Sei‐Hyung Ryu	2024	2
2	Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Jeff Kim,T. Kubo,Shadi Sabri,Brett Hull,Sei‐Hyung Ryu	2024	1
3	Reliability and Standardization for SiC Power Devices Materials science forum ·D. A. Gajewski,Satyaki Ganguly,Daniel J. Lichtenwalner,Edward Van Brunt,Brett Hull,Scott T. Allen,John W. Palmour	2023	3
4	650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout Key engineering materials ·Daniel J. Lichtenwalner,Satyaki Ganguly,T. Kubo,Éric Valdenaire,D. A. Gajewski,Sei‐Hyung Ryu,Brett Hull,Scott T. Allen,John W. Palmour	2023	1
5	Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs Materials science forum ·Daniel J. Lichtenwalner,Sei‐Hyung Ryu,Brett Hull,Scott T. Allen,John W. Palmour	2023	4
6	High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes A. P. K. Wickramage,F. D. Yoder,Jae Hyung Park,Lucimara Santos Silva,Wouters EFM,Shadi Sabri,Edward Van Brunt,Brett Hull,Daniel J. Lichtenwalner,D. A. Gajewski,John W. Palmour	2023	4
7	Reliability of SiC MOSFET with Danfoss Bond Buffer Technology in Automotive Traction Power Modules Hubert Göbel,Martin Becker,Mastunori SAWADA,Brett Hull,Shadi Sabri,Daniel J. Lichtenwalner,Khurshidakhon Egamberdiyeva	2019	10
8	The effects of radiation on the terrestrial operation of SiC MOSFETs Akin Akturk,J.M. McGarrity,Neil Goldsman,Daniel J. Lichtenwalner,Brett Hull,D.E. Grider,R. Wilkins	2018	12
9	Reliability studies of SiC vertical power MOSFETs Daniel J. Lichtenwalner,Brett Hull,Edward Van Brunt,Shadi Sabri,D. A. Gajewski,D.E. Grider,Scott T. Allen,John W. Palmour,Akin Akturk,J.M. McGarrity	2018	52
10	Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor Materials science forum ·Sei‐Hyung Ryu,Daniel J. Lichtenwalner,Edward Van Brunt,Craig Capell,Michael O’Loughlin,Charlotte Jonas,昭博髙﨑,TM Benson,Jim Richmond,Albert A. Burk,Brett Hull,Heather O’Brien,Aderinto Ogunniyi,Aivars J. Lelis,Jeff B. Casady,David Grider,Scott T. Allen,John W. Palmour	2017	10
11	650V, 7mOhm SiC MOSFET Development for Dual-Side Sintered Power Modules in Electric Drive Vehicles R. Kreile,Г. И. Сигейкин,Subhra Moahpatra,B Ptácková,BY RALPH PEMBERTON,Khurshidakhon Egamberdiyeva,Brett Hull,Jincai Zhang,Scott T. Allen,John W. Palmour	2017	1
12	Ultra-low (1.25mΩ) On-Resistance 900V SiC 62mm Half- Bridge Power Modules Using New 10mΩ SiC MOSFETs Khurshidakhon Egamberdiyeva,Vipindas Pala,Edward Van Brunt,Brett Hull,Sei‐Hyung Ryu,Gangyao Wang,Jim Richmond,Scott T. Allen,D.E. Grider,John W. Palmour,Benedikt Römmelt,Brice McPherson,K.J. Olejniczak,Brandon Passmore,А. В. Чабан	2016	4
13	SiC power device reliability D. A. Gajewski,Brett Hull,Daniel J. Lichtenwalner,Sei‐Hyung Ryu,Abdul Ghofur Subrata,A. Naylor,Gangyao Wang,Scott T. Allen,John W. Palmour	2016	49
14	High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation Materials science forum ·Daniel J. Lichtenwalner,Vipindas Pala,Brett Hull,Scott T. Allen,John W. Palmour	2016	19
15	New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications Khurshidakhon Egamberdiyeva,Vipindas Pala,Daniel J. Lichtenwalner,Edward Van Brunt,Brett Hull,Gangyao Wang,Jim Richmond,Scott T. Allen,D.E. Grider,John W. Palmour	2015	79
16	4H-SiC Trench Schottky Diodes for Next Generation Products Materials science forum ·准宮下,河村広美,C.C. Ononuju,Brett Hull,Scott T. Allen,John W. Palmour	2013	16
17	Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p+–n–n+ rectifier diodes Solid-State Electronics ·M. E. Levinshteĭn,T. T. Mnatsakanov,Pavel A. Ivanov,John W. Palmour,Mrinal K. Das,Brett Hull	2007	6
18	High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes Materials science forum ·M. E. Levinshteĭn,Pavel A. Ivanov,Osvaldo Caio Mendes Pacheco,Klaus Onnich,John W. Palmour,Mrinal K. Das,Brett Hull	2006	4
19	Evolution of Drift-Free, High Power 4H-SiC PiN Diodes Materials science forum ·Mrinal K. Das,Joseph J. Sumakeris,Brett Hull,Jim Richmond	2006	8
20	Drift-free 10-kV, 20-A 4H-SiC PiN diodes Journal of Electronic Materials ·Brett Hull,Mrinal K. Das,Joseph J. Sumakeris,Heimir Rafn Bjarkason,Sumi Krishnaswami	2005	7

About Brett Hull

Brett Hull is a scholar working on Electrical and Electronic Engineering, Control and Systems Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Nuclear and High Energy Physics, having authored 116 papers that have together received 2.3k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (110 papers), Semiconductor materials and devices (48 papers), Multilevel Inverters and Converters (29 papers), Electromagnetic Compatibility and Noise Suppression (24 papers), HVDC Systems and Fault Protection (17 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and interfaces (11 papers) and Pulsed Power Technology Applications (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.3k citations), Condensed Matter Physics (111 citations), Electronic, Optical and Magnetic Materials (139 citations), Atomic and Molecular Physics, and Optics (216 citations) and Ceramics and Composites (34 citations). Brett Hull has collaborated with scholars based in United States, China and Russia. Frequent co-authors include John W. Palmour, Scott T. Allen, Jim Richmond, Sei‐Hyung Ryu, Mrinal K. Das, Daniel J. Lichtenwalner, Edward Van Brunt, D.E. Grider, Anant Agarwal and Lin Cheng. Their work appears in journals such as Materials science forum, Solid-State Electronics, Journal of Applied Physics, Semiconductor Science and Technology and IEEE Transactions on Nuclear Science.

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