Charles Scozzie

2.7k citations

139 papers · 2.2k indexed · h-index 25

Electrical and Electronic Engineering top 2%
Atomic and Molecular Physics, and Optics top 10%
Control and Systems Engineering top 5%
Condensed Matter Physics top 10%
Materials Chemistry

Co-authors: John W. Palmour Lin Cheng Anant Agarwal Jim Richmond Michael O’Loughlin Edward Van Brunt Albert A. Burk Vipindas Pala
Topics: Silicon Carbide Semiconductor Technologies (128 papers)Semiconductor materials and devices (66 papers)Electrostatic Discharge in Electronics (38 papers)
Cited by: Electrical and Electronic Engineering Condensed Matter Physics Control and Systems Engineering
Journals: SHILAP Revista de lepidopterologíaJournal of Applied Physics IEEE Transactions on Power Electronics
Partner nations: United States China Germany

In The Last Decade

Charles Scozzie

136 papers receiving 2.0k citations

Peers

Countries citing papers authored by Charles Scozzie

Since Specialization

Citations

This map shows the geographic impact of Charles Scozzie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Charles Scozzie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Charles Scozzie more than expected).

Fields of papers citing papers by Charles Scozzie

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Charles Scozzie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Charles Scozzie. The network helps show where Charles Scozzie may publish in the future.

Co-authorship network of co-authors of Charles Scozzie

This figure shows the co-authorship network connecting the top 25 collaborators of Charles Scozzie. A scholar is included among the top collaborators of Charles Scozzie based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Charles Scozzie. Charles Scozzie is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Solid-state Marx generator with 24 KV 4H-SIC IGBTs 2015 ·(unknown),Heather O’Brien,Edward Van Brunt,Aderinto Ogunniyi,Charles Scozzie	9
2	27 kV, 20 A 4H-SiC n-IGBTs 2015 ·Materials science forum ·Edward Van Brunt,Lin Cheng,Michael O’Loughlin,Jim Richmond,Vipindas Pala,John W. Palmour,C. W. Tipton,Charles Scozzie	115
3	10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems 2014 ·Vipindas Pala,Edward Van Brunt,Lin Cheng,Michael O’Loughlin,Jim Richmond,Albert A. Burk,Scott T. Allen,David Grider,John W. Palmour,Charles Scozzie	127
4	Ultra High Voltage SiC Power Devices and Its Impact on Future Power Delivery System 2014 ·Alex Q. Huang,Lin Cheng,John W. Palmour,Charles Scozzie	7
5	22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation 2014 ·Edward Van Brunt,Scott T. Allen,Albert A. Burk,John W. Palmour,Charles Scozzie,Lin Cheng,Michael O’Loughlin,Craig Capell,Charlotte Jonas,(unknown),Jim Richmond,Vipindas Pala,Sei‐Hyung Ryu	68
6	Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV 2014 ·John W. Palmour,Lin Cheng,Vipindas Pala,Edward Van Brunt,Daniel J. Lichtenwalner,(unknown),Jim Richmond,Michael O’Loughlin,Sei‐Hyung Ryu,Scott T. Allen,Albert A. Burk,Charles Scozzie	241
7	Design of an advanced modular automated evaluation system for experimental high power SGTOs 2013 ·(unknown),Kevin Lawson,Stephen Bayne,Michael Giesselmann,Heather O’Brien,Aderinto Ogunniyi,Charles Scozzie	4
8	Review of high voltage silicon carbide device research at the army research laboratory 2011 ·Heather O’Brien,Aderinto Ogunniyi,Charles Scozzie,(unknown),Anant Agarwal,(unknown),V.A.K. Temple	1
9	SiC super GTO thyristor technology development: Present status and future perspective 2011 ·(unknown),Anant Agarwal,Craig Capell,Lin Cheng,Michael O’Loughlin,Albert A. Burk,John W. Palmour,V.A.K. Temple,Aderinto Ogunniyi,Heather O’Brien,Charles Scozzie	28
10	10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC 2010 ·Materials science forum ·(unknown),Robert Callanan,Anant Agarwal,Albert A. Burk,Michael O’Loughlin,John W. Palmour,Charles Scozzie	8
11	Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations 2010 ·Materials science forum ·Victor Veliadis,(unknown),(unknown),Robert S. Howell,Aivars J. Lelis,Charles Scozzie	4
12	9 kV, 1 cm×1 cm SiC super gto technology development for pulse power 2009 ·Anant Agarwal,Craig Capell,(unknown),Jim Richmond,Robert Callanan,Michael O’Loughlin,Albert A. Burk,Charles L. Melcher,John W. Palmour,V.A.K. Temple,Heather O’Brien,Charles Scozzie	31
13	High energy density capacitors for pulsed power applications 2009 ·F.W. MacDougall,J.B. Ennis,Xiao Hui Yang,Robert Cooper,(unknown),(unknown),(unknown),Mark Schneider,(unknown),(unknown),T. Richard Jow,Janet Ho,Charles Scozzie,S. P. S. Yen	20
14	Silicon diode evaluated as rectifier for wide-pulse switching applications 2009 ·Heather O’Brien,Aderinto Ogunniyi,Charles Scozzie,(unknown),V.A.K. Temple	1
15	4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications 2008 ·SAE International Journal of Aerospace ·Victor Veliadis,(unknown),Ty McNutt,Megan Snook,(unknown),Aivars J. Lelis,Charles Scozzie	3
16	Status of 1200V 4H-SiC Power DMOSFETs 2007 ·(unknown),Fatima Husna,Anant Agarwal,Aivars J. Lelis,Bruce Geil,Charles Scozzie,Mrinal K. Das,Sei‐Hyung Ryu,Sarah K. Haney,Charlotte Jonas,Craig Capell,(unknown),(unknown),Robert Callanan	10
17	Characterization of Ti schottky diodes on epi-regrown 4H-SiC 2006 ·Journal of Electronic Materials ·(unknown),Canhua Li,T. Paul Chow,Ishwara B. Bhat,Kenneth A. Jones,Charles Scozzie,Anant Agarwal	2
18	Emitter Size Effect in 4H-SiC BJT 2006 ·2006 5th International Power Electronics and Motion Control Conference ·Yan Gao,Alex Q. Huang,Sumi Krishnaswami,Anant Agarwal,Charles Scozzie	2
19	Pulsed-laser-deposited AlN films for high-temperature SiC MIS devices 2000 ·MRS Internet Journal of Nitride Semiconductor Research ·R. D. Vispute,A. Patel,(unknown),Bin Ming,R. P. Sharma,T. Venkatesan,Charles Scozzie,Aivars J. Lelis,Tsvetanka Zheleva,Keith Jones	4
20	Analysis of neutron damage in high-temperature silicon carbide JFETs 1994 ·IEEE Transactions on Nuclear Science ·F. B. McLean,J.M. McGarrity,Charles Scozzie,C. W. Tipton,(unknown)	29

About Charles Scozzie

Charles Scozzie is a scholar working on Electrical and Electronic Engineering, Control and Systems Engineering and Condensed Matter Physics, having authored 139 papers that have together received 2.2k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (128 papers), Semiconductor materials and devices (66 papers) and Electrostatic Discharge in Electronics (38 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.1k citations), Condensed Matter Physics (124 citations) and Control and Systems Engineering (189 citations). Charles Scozzie has collaborated with scholars based in United States, China and Germany. Frequent co-authors include John W. Palmour, Lin Cheng, Anant Agarwal, Jim Richmond, Michael O’Loughlin, Edward Van Brunt, Albert A. Burk, Vipindas Pala, Sei‐Hyung Ryu and Aivars J. Lelis. Their work appears in journals such as SHILAP Revista de lepidopterología, Journal of Applied Physics and IEEE Transactions on Power Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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