Charlotte Jonas

861 total citations
37 papers, 697 citations indexed

About

Charlotte Jonas is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Charlotte Jonas has authored 37 papers receiving a total of 697 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 7 papers in Electronic, Optical and Magnetic Materials and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Charlotte Jonas's work include Silicon Carbide Semiconductor Technologies (37 papers), Semiconductor materials and devices (22 papers) and Multilevel Inverters and Converters (19 papers). Charlotte Jonas is often cited by papers focused on Silicon Carbide Semiconductor Technologies (37 papers), Semiconductor materials and devices (22 papers) and Multilevel Inverters and Converters (19 papers). Charlotte Jonas collaborates with scholars based in United States, China and Germany. Charlotte Jonas's co-authors include John W. Palmour, Sei‐Hyung Ryu, Anant Agarwal, Craig Capell, Michael O’Loughlin, Lin Cheng, Robert Callanan, Jim Richmond, Albert A. Burk and Mrinal K. Das and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Journal of Electronic Materials.

In The Last Decade

Charlotte Jonas

37 papers receiving 670 citations

Peers

Charlotte Jonas

EEE

AMPO

EOMM

CSE

ME

Peter A. Losee United States

J. Urresti Spain

Phil Rutter United Kingdom

Aderinto Ogunniyi United States

Ralf Siemieniec Germany

Yuichi Onozawa Japan

Jang‐Kwon Lim Sweden

Kijeong Han United States

Siddharth Potbhare United States

Anup Bhalla United States

Peter A. Losee United States

Charlotte Jonas

562 ×0.8

EEE

39 ×0.8

AMPO

29 ×0.7

EOMM

18 ×0.7

CSE

31 ×2.2

ME

Citations per year, relative to Charlotte Jonas Charlotte Jonas (= 1×) peers Peter A. Losee

Countries citing papers authored by Charlotte Jonas

Since Specialization

Citations

This map shows the geographic impact of Charlotte Jonas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Charlotte Jonas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Charlotte Jonas more than expected).

Fields of papers citing papers by Charlotte Jonas

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Charlotte Jonas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Charlotte Jonas. The network helps show where Charlotte Jonas may publish in the future.

Co-authorship network of co-authors of Charlotte Jonas

This figure shows the co-authorship network connecting the top 25 collaborators of Charlotte Jonas. A scholar is included among the top collaborators of Charlotte Jonas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Charlotte Jonas. Charlotte Jonas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Ryu, Sei‐Hyung, Daniel J. Lichtenwalner, Edward Van Brunt, et al.. (2017). Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor. Materials science forum. 897. 587–590. 10 indexed citations

2.

Jonas, Charlotte, Craig Capell, Peter C. Butler, et al.. (2017). Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed. Materials science forum. 897. 521–524. 11 indexed citations

3.

Ryu, Sei‐Hyung, Craig Capell, Charlotte Jonas, et al.. (2016). An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC N-IGBTs. Materials science forum. 858. 945–948. 10 indexed citations

4.

Pala, Vipindas, Adam Barkley, Brett Hull, et al.. (2015). 900V silicon carbide MOSFETs for breakthrough power supply design. 4145–4150. 19 indexed citations

5.

Brunt, Edward Van, Scott T. Allen, Albert A. Burk, et al.. (2014). 22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation. 358–361. 68 indexed citations

6.

Ryu, Sei‐Hyung, Charlotte Jonas, Craig Capell, et al.. (2014). 1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer. Materials science forum. 778-780. 939–942. 4 indexed citations

7.

Ryu, Sei‐Hyung, Craig Capell, Charlotte Jonas, et al.. (2013). Ultra high voltage IGBTs in 4H-SiC. 36–39. 36 indexed citations

8.

Ryu, Sei‐Hyung, Craig Capell, Charlotte Jonas, et al.. (2013). 15 kV IGBTs in 4H-SiC. Materials science forum. 740-742. 954–957. 16 indexed citations

9.

Ryu, Sei‐Hyung, Lin Cheng, Sarit Dhar, et al.. (2012). Development of 15 kV 4H-SiC IGBTs. Materials science forum. 717-720. 1135–1138. 40 indexed citations

10.

Ryu, Sei‐Hyung, Craig Capell, Lin Cheng, et al.. (2012). High performance, ultra high voltage 4H-SiC IGBTs. 3603–3608. 45 indexed citations

11.

Ryu, Sei‐Hyung, Craig Capell, Charlotte Jonas, et al.. (2012). Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs. 257–260. 58 indexed citations

12.

Ryu, Sei‐Hyung, Lin Cheng, Sarit Dhar, et al.. (2012). Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications. Materials science forum. 717-720. 1059–1064. 10 indexed citations

13.

Ryu, Sei‐Hyung, Lin Cheng, Sarit Dhar, et al.. (2011). 3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications. 227–230. 16 indexed citations

14.

Cheng, Lin, Sei‐Hyung Ryu, Charlotte Jonas, et al.. (2009). 3300 V, 30 A 4H-SiC power DMOSFETs. 1–2. 7 indexed citations

15.

Jonas, Charlotte, et al.. (2008). 12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance. Materials science forum. 600-603. 1187–1190. 27 indexed citations

16.

Husna, Fatima, Anant Agarwal, Aivars J. Lelis, et al.. (2007). Status of 1200V 4H-SiC Power DMOSFETs. 457 460. 1–2. 10 indexed citations

17.

Jonas, Charlotte, Craig Capell, Qingchun Zhang, et al.. (2007). 1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70. Journal of Electronic Materials. 37(5). 662–665. 19 indexed citations

18.

Jonas, Charlotte, et al.. (2007). 9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on. Materials science forum. 556-557. 771–774. 13 indexed citations

19.

Zhang, Qingchun, Charlotte Jonas, Sei‐Hyung Ryu, Anant Agarwal, & John W. Palmour. (2006). Design and Fabrications of High Voltage IGBTs on 4H-SiC. 1–4. 27 indexed citations

20.

Ryu, Sei‐Hyung, et al.. (2006). 950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs. MRS Proceedings. 911. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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