L.B. Rowland

4.2k citations

80 papers · 3.4k indexed · h-index 32

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 33
Electronic, Optical and Magnetic Materials top 2%
- Copper Interconnects and Reliability 12
Electrical and Electronic Engineering top 2%
- Silicon Carbide Semiconductor Technologies 55
- Semiconductor materials and devices 36
- HVDC Systems and Fault Protection 7
- Multilevel Inverters and Converters 7
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 9
Materials Chemistry top 5%
Mechanics of Materials
- Metal and Thin Film Mechanics 13

Co-authors: K. Doverspike D. Kurt Gaskill Marek Skowroński S. R. Seshadri Anant Agarwal Weijin Qian Albert A. Burk Adrian R. Powell
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Journal of Electronic Materials (8 papers)Applied Physics Letters (7 papers)Journal of Crystal Growth (6 papers)
Partner nations: United States Israel Germany

In The Last Decade

L.B. Rowland

77 papers receiving 3.3k citations

Peers

Countries citing papers authored by L.B. Rowland

Since Specialization

Citations

This map shows the geographic impact of L.B. Rowland's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.B. Rowland with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.B. Rowland more than expected).

Fields of papers citing papers by L.B. Rowland

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L.B. Rowland. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.B. Rowland. The network helps show where L.B. Rowland may publish in the future.

Co-authorship network

The 25 scholars most cited alongside L.B. Rowland, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L.B. Rowland Line = papers co-authored together L.B. Rowland links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	6H and 4H-SiC Avalanche Photodiodes Materials science forum ·L.B. Rowland,P. Chelkowski,Jody Fronheiser,Alexey Vert,Peter M. Sandvik,Emilie Carey-Hock,Wang Rui-ying,Bart Van Zeghbroeck,William Clapton	2009	1
2	An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers Materials science forum ·René Bloch,P.J. McNally,Na Ren,A Konnova Tatiana,A.N. Danilewsky,T. Tuomi,Ilaria Rossetto,V. Dědkové,R. Simon,Stanislav I. Soloviev,L.B. Rowland,Peter M. Sandvik	2007	1
3	9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias Electronics Letters ·S. A. Derry,L.B. Rowland,E.B. Kaminsky,Jesse B. Tucker,J. Kretchmer,A. Fuschi,J. W. Cook,Jiang Huo	2003	24
4	Temperature-dependent electroluminescence in InGaN/GaN multiple-quantum-well light-emitting diodes Journal of Electronic Materials ·X. A. Cao,S. F. LeBoeuf,L.B. Rowland,Y. Rachel Zhang	2003	21
5	Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes Applied Physics Letters ·X. A. Cao,S. F. LeBoeuf,L.B. Rowland,Chunhui Yan,徐生忠	2003	114
6	Turn-off characteristics of 1000 V SiC gate-turn-off thyristors S. R. Seshadri,Jeff B. Casady,Anant Agarwal,R.R. Siergiej,L.B. Rowland,Phillip Sanger,C.D. Brandt,Gregorio Indelicato,Hu Kanghua,Rostan Rodrigues,Mandy Brown	2002	3
7	SiC materials-progress, status, and potential roadblocks Proceedings of the IEEE ·Adrian R. Powell,L.B. Rowland	2002	167
8	A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures Anant Agarwal,R.R. Siergiej,S. R. Seshadri,Mark White,P.G. McMullin,Albert A. Burk,L.B. Rowland,C.D. Brandt,R.H. Hopkins	2002	19
9	Stacking-fault formation and propagation in 4H-SiC PiN diodes Journal of Electronic Materials ·Robert E. Stahlbush,M. Fatemi,J.B. Fedison,S. D. Arthur,L.B. Rowland,Timothy Skinner	2002	26
10	Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy Materials science forum ·L.B. Rowland,Greg Dunne,Jaime A. Freitas	2000	3
11	Demonstration of an SiC neutron detector for high-radiation environments IEEE Transactions on Electron Devices ·S. R. Seshadri,A.R. Dulloo,F.H. Ruddy,J.G. Seidel,L.B. Rowland	1999	118
12	Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC Materials science forum ·L.B. Rowland,Albert A. Burk,C.D. Brandt	1998	7
13	Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T Journal of Applied Physics ·Numan Romero,Robert P. Devaty,W. J. Choyke,D. W. Langer,L.B. Rowland	1998	43
14	4H-SiC power devices for use in power electronic motor control Solid-State Electronics ·Jeff B. Casady,Anant Agarwal,S. R. Seshadri,R.R. Siergiej,L.B. Rowland,M. F. MacMillan,David C. Sheridan,Phillip Sanger,C.D. Brandt	1998	48
15	1000 V 4H-SiC gate turn off (GTO) thyristor R.R. Siergiej,Jeff B. Casady,Anant Agarwal,L.B. Rowland,S. R. Seshadri,S. S. Mani,Phillip Sanger,C.D. Brandt	1997	6
16	Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures MRS Proceedings ·Anant Agarwal,R.R. Siergiej,S. R. Seshadri,Michael White,P.G. McMullin,Albert A. Burk,L.B. Rowland,C.D. Brandt,R.H. Hopkins	1996	16
17	Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization Journal of Crystal Growth ·R. F. Davis,Satoru Tanaka,L.B. Rowland,R. S. Kern,Zlatko Sitar,任素芳,C. Wang	1996	16
18	Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films Materials science forum ·F. K. Koschnick,T R Dharshan,E. R. Glaser,K. Doverspike,L.B. Rowland,D. Kurt Gaskill,D. K. Wickenden	1995	5
19	The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire Journal of Electronic Materials ·K. Doverspike,L.B. Rowland,D. Kurt Gaskill,Jaime A. Freitas	1995	52
20	Effect of Aluminum Nitride Buffer Layer Temperature on Gallium Nitride Grown by OMVPE MRS Proceedings ·L.B. Rowland,K. Doverspike,D. Kurt Gaskill,Jaime A. Freitas	1994	15

About L.B. Rowland

L.B. Rowland is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 80 papers that have together received 3.4k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (55 papers), Semiconductor materials and devices (36 papers), GaN-based semiconductor devices and materials (33 papers), Metal and Thin Film Mechanics (13 papers), Copper Interconnects and Reliability (12 papers), Semiconductor Quantum Structures and Devices (9 papers), HVDC Systems and Fault Protection (7 papers) and Multilevel Inverters and Converters (7 papers). The work is most often cited by research in Condensed Matter Physics (1.8k citations), Electronic, Optical and Magnetic Materials (935 citations) and Electrical and Electronic Engineering (2.3k citations). L.B. Rowland has collaborated with scholars based in United States, Israel and Germany. Frequent co-authors include K. Doverspike, D. Kurt Gaskill, Marek Skowroński, S. R. Seshadri, Anant Agarwal, Weijin Qian, Albert A. Burk, Adrian R. Powell, C.D. Brandt and G. Kelner. Their work appears in journals such as Journal of Electronic Materials, Applied Physics Letters, Journal of Crystal Growth, IEEE Electron Device Letters and Journal of materials research/Pratt's guide to venture capital sources.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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