L.B. Rowland

4.2k total citations
80 papers, 3.4k citations indexed

About

L.B. Rowland is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, L.B. Rowland has authored 80 papers receiving a total of 3.4k indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Electrical and Electronic Engineering, 33 papers in Condensed Matter Physics and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in L.B. Rowland's work include Silicon Carbide Semiconductor Technologies (55 papers), Semiconductor materials and devices (36 papers) and GaN-based semiconductor devices and materials (33 papers). L.B. Rowland is often cited by papers focused on Silicon Carbide Semiconductor Technologies (55 papers), Semiconductor materials and devices (36 papers) and GaN-based semiconductor devices and materials (33 papers). L.B. Rowland collaborates with scholars based in United States, Israel and Germany. L.B. Rowland's co-authors include K. Doverspike, D. Kurt Gaskill, Marek Skowroński, S. R. Seshadri, Anant Agarwal, Weijin Qian, Albert A. Burk, Adrian R. Powell, C.D. Brandt and S.C. Binari and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

L.B. Rowland

77 papers receiving 3.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L.B. Rowland United States 32 2.3k 1.8k 935 906 865 80 3.4k
S. Misawa Japan 30 2.0k 0.9× 1.4k 0.8× 854 0.9× 1.1k 1.2× 956 1.1× 95 3.4k
E. N. Mokhov Russia 25 1.6k 0.7× 890 0.5× 537 0.6× 1.0k 1.1× 494 0.6× 214 2.4k
J. Z. Domagała Poland 24 1.0k 0.4× 931 0.5× 748 0.8× 1.4k 1.5× 862 1.0× 249 2.3k
J. A. Edmond United States 26 1.8k 0.8× 982 0.5× 670 0.7× 876 1.0× 786 0.9× 60 2.6k
S. Yu. Karpov Russia 32 1.8k 0.8× 2.7k 1.5× 1.0k 1.1× 1.3k 1.4× 1.5k 1.7× 184 3.8k
Jun Suda Japan 42 5.7k 2.4× 2.6k 1.5× 1.7k 1.8× 1.4k 1.6× 1.4k 1.7× 401 6.9k
B. Sverdlov United States 24 2.4k 1.0× 2.3k 1.3× 1.1k 1.2× 1.4k 1.6× 1.5k 1.8× 86 4.1k
F. Sèmond France 35 2.1k 0.9× 2.6k 1.4× 1.3k 1.3× 1.4k 1.6× 1.8k 2.1× 170 4.3k
Albert G. Baca United States 36 2.6k 1.1× 2.5k 1.4× 1.4k 1.5× 1.1k 1.2× 1.1k 1.3× 162 3.9k
Mao Lin United States 18 2.2k 0.9× 2.6k 1.5× 1.1k 1.2× 1.5k 1.7× 1.4k 1.6× 34 4.1k

Countries citing papers authored by L.B. Rowland

Since Specialization
Citations

This map shows the geographic impact of L.B. Rowland's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.B. Rowland with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.B. Rowland more than expected).

Fields of papers citing papers by L.B. Rowland

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L.B. Rowland. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.B. Rowland. The network helps show where L.B. Rowland may publish in the future.

Co-authorship network of co-authors of L.B. Rowland

This figure shows the co-authorship network connecting the top 25 collaborators of L.B. Rowland. A scholar is included among the top collaborators of L.B. Rowland based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L.B. Rowland. L.B. Rowland is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rowland, L.B., et al.. (2009). 6H and 4H-SiC Avalanche Photodiodes. Materials science forum. 615-617. 869–872. 1 indexed citations
2.
McNally, P.J., Na Ren, A.N. Danilewsky, et al.. (2007). An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers. Materials science forum. 556-557. 227–230. 1 indexed citations
3.
Rowland, L.B., et al.. (2004). Self-heating effects in AlGaN/GaN high-power HEMTs. 39. 15–16. 3 indexed citations
4.
Cao, X. A., et al.. (2003). Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes. Applied Physics Letters. 82(21). 3614–3616. 114 indexed citations
5.
Cao, X. A., et al.. (2003). Temperature-dependent electroluminescence in InGaN/GaN multiple-quantum-well light-emitting diodes. Journal of Electronic Materials. 32(5). 316–321. 21 indexed citations
6.
Rowland, L.B., et al.. (2003). 9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias. Electronics Letters. 39(2). 245–247. 24 indexed citations
7.
Powell, Adrian R. & L.B. Rowland. (2002). SiC materials-progress, status, and potential roadblocks. Proceedings of the IEEE. 90(6). 942–955. 167 indexed citations
8.
Seshadri, S. R., Jeff B. Casady, Anant Agarwal, et al.. (2002). Turn-off characteristics of 1000 V SiC gate-turn-off thyristors. 131–134. 3 indexed citations
9.
Agarwal, Anant, R.R. Siergiej, S. R. Seshadri, et al.. (2002). A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures. 119–122. 19 indexed citations
10.
Stahlbush, Robert E., et al.. (2002). Stacking-fault formation and propagation in 4H-SiC PiN diodes. Journal of Electronic Materials. 31(7). 827–827. 26 indexed citations
11.
Rowland, L.B., Greg Dunne, & Jaime A. Freitas. (2000). Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy. Materials science forum. 338-342. 161–164. 3 indexed citations
12.
Rowland, L.B., Albert A. Burk, & C.D. Brandt. (1998). Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC. Materials science forum. 264-268. 115–118. 7 indexed citations
13.
Casady, Jeff B., Anant Agarwal, S. R. Seshadri, et al.. (1998). 4H-SiC power devices for use in power electronic motor control. Solid-State Electronics. 42(12). 2165–2176. 48 indexed citations
14.
Burk, Albert A. & L.B. Rowland. (1997). Homoepitaxial VPE Growth of SiC Active Layers. physica status solidi (b). 202(1). 263–279. 31 indexed citations
15.
Siergiej, R.R., Jeff B. Casady, Anant Agarwal, et al.. (1997). 1000 V 4H-SiC gate turn off (GTO) thyristor. 2 xv1i. 363–366. 6 indexed citations
16.
Agarwal, Anant, R.R. Siergiej, S. R. Seshadri, et al.. (1996). Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures. MRS Proceedings. 423. 16 indexed citations
17.
Koschnick, F. K., E. R. Glaser, K. Doverspike, et al.. (1995). Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films. Materials science forum. 196-201. 37–42. 5 indexed citations
18.
Doverspike, K., L.B. Rowland, D. Kurt Gaskill, & Jaime A. Freitas. (1995). The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire. Journal of Electronic Materials. 24(4). 269–273. 52 indexed citations
19.
Rowland, L.B., K. Doverspike, D. Kurt Gaskill, & Jaime A. Freitas. (1994). Effect of Aluminum Nitride Buffer Layer Temperature on Gallium Nitride Grown by OMVPE. MRS Proceedings. 339. 15 indexed citations
20.
Rowland, L.B., et al.. (1993). Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy. Journal of materials research/Pratt's guide to venture capital sources. 8(9). 2310–2314. 42 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by S. Misawa Breakdown of academic impact, for papers by E. N. Mokhov Breakdown of academic impact, for papers by J. Z. Domagała Breakdown of academic impact, for papers by J. A. Edmond Breakdown of academic impact, for papers by S. Yu. Karpov Breakdown of academic impact, for papers by Jun Suda Breakdown of academic impact, for papers by B. Sverdlov Breakdown of academic impact, for papers by F. Sèmond Breakdown of academic impact, for papers by Albert G. Baca Breakdown of academic impact, for papers by Mao Lin
Rankless by CCL
2026