C.H. Carter

817 total citations
14 papers, 644 citations indexed

About

C.H. Carter is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C.H. Carter has authored 14 papers receiving a total of 644 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 3 papers in Condensed Matter Physics and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C.H. Carter's work include Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (9 papers) and Silicon and Solar Cell Technologies (3 papers). C.H. Carter is often cited by papers focused on Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (9 papers) and Silicon and Solar Cell Technologies (3 papers). C.H. Carter collaborates with scholars based in United States, United Kingdom and China. C.H. Carter's co-authors include John W. Palmour, Scott T. Allen, Karen Moore, C.E. Weitzel, M. Bhatnagar, J. A. Edmond, Hoyoul Kong, Ranbir Singh, R Glass and Olof Kordina and has published in prestigious journals such as IEEE Transactions on Electron Devices, Physica B Condensed Matter and Diamond and Related Materials.

In The Last Decade

C.H. Carter

13 papers receiving 616 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C.H. Carter United States	8	588	157	106	83	70	14	644
Calvin H. Carter China	16	621 1.1×	148 0.9×	96 0.9×	114 1.4×	79 1.1×	23	671
H. Mitlehner Germany	14	882 1.5×	141 0.9×	83 0.8×	69 0.8×	49 0.7×	43	923
S. Sriram United States	14	606 1.0×	180 1.1×	85 0.8×	63 0.8×	99 1.4×	53	670
Masahiro Nagano Japan	14	670 1.1×	203 1.3×	97 0.9×	132 1.6×	41 0.6×	46	724
V. E. Chelnokov Russia	13	531 0.9×	171 1.1×	164 1.5×	78 0.9×	32 0.5×	47	627
Anatoly M. Strel’chuk Russia	14	672 1.1×	244 1.6×	103 1.0×	54 0.7×	53 0.8×	95	712
G. Augustine United States	12	629 1.1×	138 0.9×	104 1.0×	115 1.4×	86 1.2×	36	692
Mitsuhiro Shigeta Japan	10	384 0.7×	204 1.3×	97 0.9×	70 0.8×	51 0.7×	28	460
D. Stephani Germany	17	986 1.7×	179 1.1×	75 0.7×	126 1.5×	27 0.4×	61	1.0k
A. Powell United Kingdom	13	549 0.9×	225 1.4×	117 1.1×	69 0.8×	38 0.5×	32	639

Countries citing papers authored by C.H. Carter

Since Specialization

Citations

This map shows the geographic impact of C.H. Carter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.H. Carter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.H. Carter more than expected).

Fields of papers citing papers by C.H. Carter

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.H. Carter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.H. Carter. The network helps show where C.H. Carter may publish in the future.

Co-authorship network of co-authors of C.H. Carter

This figure shows the co-authorship network connecting the top 25 collaborators of C.H. Carter. A scholar is included among the top collaborators of C.H. Carter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.H. Carter. C.H. Carter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Müller, St.G., M.F. Brady, Albert A. Burk, et al.. (2006). Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective. Superlattices and Microstructures. 40(4-6). 195–200. 20 indexed citations

Malta, D.P., Jason R. Jenny, V. F. Tsvetkov, et al.. (2006). High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications. MRS Proceedings. 911. 1 indexed citations

Palmour, John W., C.E. Weitzel, Kevin J. Nordquist, & C.H. Carter. (2005). 4H-silicon carbide mesfet with 2.8 W/mm rf power density. 27–28.

Powell, Adrian R., Joseph J. Sumakeris, R.T. Leonard, et al.. (2004). Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications. MRS Proceedings. 815. 8 indexed citations

Palmour, John W., Scott T. Allen, S.T. Sheppard, et al.. (2003). Progress in SiC and GaN microwave devices fabricated on semi-insulating 4H-SiC substrates. 38–41. 6 indexed citations

Allen, Scott T., et al.. (2002). Silicon carbide MESFETs for high-power S-band applications. 1. 57–60. 9 indexed citations

Allen, Scott T., John W. Palmour, V. F. Tsvetkov, et al.. (2002). 4H-SiC MESFET's on high resistivity substrates with 30 GHz f/sub max/. 102–103. 2 indexed citations

Palmour, John W., Ranbir Singh, R Glass, Olof Kordina, & C.H. Carter. (2002). Silicon carbide for power devices. 25–32. 45 indexed citations

Palmour, John W., Lori A. Lipkin, Ranbir Singh, et al.. (1997). SiC device technology: remaining issues. Diamond and Related Materials. 6(10). 1400–1404. 22 indexed citations

10.

Allen, Scott T., John W. Palmour, C.H. Carter, et al.. (1996). Silicon carbide MESFET's with 2 W/mm and 50% P.A.E. at 1.8 GHz. 681–684 vol.2. 5 indexed citations

11.

Weitzel, C.E., John W. Palmour, C.H. Carter, et al.. (1996). Silicon carbide high-power devices. IEEE Transactions on Electron Devices. 43(10). 1732–1741. 365 indexed citations

12.

Dmitriev, V., N.I. Kuznetsov, K. G. Irvine, & C.H. Carter. (1995). Electric Breakdown in Nitride PN Junctions. MRS Proceedings. 395. 8 indexed citations

13.

Palmour, John W., J. A. Edmond, Hoyoul Kong, & C.H. Carter. (1993). 6H-silicon carbide devices and applications. Physica B Condensed Matter. 185(1-4). 461–465. 146 indexed citations

14.

Palmour, John W., J. A. Edmond, & C.H. Carter. (1993). Demonstrating the potential of 6-H silicon carbide for power devices. IEEE Transactions on Electron Devices. 40(11). 2129–2130. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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