J. Kretchmer

1.6k citations

42 papers · 1.3k indexed · h-index 21

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Thin-Film Transistor Technologies

Papers in

Condensed Matter Physics 12
- GaN-based semiconductor devices and materials 12
Electrical and Electronic Engineering 38
- Silicon Carbide Semiconductor Technologies 31
- Semiconductor materials and devices 22
- Silicon and Solar Cell Technologies 7
- Electrostatic Discharge in Electronics 5
- Thin-Film Transistor Technologies 4

Co-authors: M. Ghezzo X. A. Cao D.M. Brown S. F. LeBoeuf E. Downey D. Walker E. B. Stokes Peter M. Sandvik
Journals: Solid-State Electronics (8 papers)Journal of Electronic Materials (6 papers)IEEE Electron Device Letters (3 papers)Journal of Applied Physics (3 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: United States India Canada

In The Last Decade

J. Kretchmer

41 papers receiving 1.2k citations

Peers

Countries citing papers authored by J. Kretchmer

Since Specialization

Citations

This map shows the geographic impact of J. Kretchmer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Kretchmer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Kretchmer more than expected).

Fields of papers citing papers by J. Kretchmer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Kretchmer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Kretchmer. The network helps show where J. Kretchmer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Kretchmer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Kretchmer Line = papers co-authored together J. Kretchmer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates Applied Physics Letters ·X. A. Cao, S. F. LeBoeuf, Mark P. D’Evelyn, S. D. Arthur, J. Kretchmer, Chunhui Yan, Laura S. van Veenhuisen	2004	85
2	Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodes Journal of Electronic Materials ·Валерий Дмитриевич Работягов, X. A. Cao, S. F. LeBoeuf, S. D. Arthur, J. Kretchmer, Mark P. D’Evelyn	2004	4
3	Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405nm Journal of Crystal Growth ·X. A. Cao, Chunhui Yan, Mark P. D’Evelyn, S. F. LeBoeuf, J. Kretchmer, R. E. Klinger, S. D. Arthur, Валерий Дмитриевич Работягов	2004	5
4	9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias Electronics Letters ·S. A. Derry, L.B. Rowland, E.B. Kaminsky, Jesse B. Tucker, J. Kretchmer, A. Fuschi, J. W. Cook, Jiang Huo	2003	24
5	Microwave power SiC MESFETs and GaN HEMTs Solid-State Electronics ·Davis Aaron Preston Knittle, L.B. Rowland, E.B. Kaminsky, J. Kretchmer, Richard Beaupre, J. L. Garrett, Jesse B. Tucker, Jiang Huo, S. Li, A. Fuschi	2003	35
6	Silicon carbide GTOs: static and dynamic characterization Ahmed Elasser, - Yon Machmudi, Edgar Saúl Vargas Martínez, Johannessen Ho, M. Ghezzo, J. Kretchmer, J.B. Fedison, T. Paul Chow	2002	3
7	A fully planarized, 6H-SiC UMOS insulated-gate bipolar transistor Olga Lidia Lópes-Gonzáles, T. P. Chow, M. Ghezzo, J. Kretchmer, Tingting Sui	2002	5
8	Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes Solid-State Electronics ·X. A. Cao, S. F. LeBoeuf, Prima Yani N Sherly, Peter M. Sandvik, E. B. Stokes, Abasifreke Ebong, D. Walker, J. Kretchmer, J. Y. Lin, H. X. Jiang	2002	32
9	On development of 600-850 V 6H-SiC LDMOS transistors using silane-ambient implant anneal Igor Sankin, Jeff B. Casady, Grace A. DeSalvo, W. C.-Y. Lee, J. Kretchmer, J. Orr, António Augusto Ribeiro de Brito, Michael S. Mazzola, Stephen E. Saddow	2002	1
10	Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes Solid-State Electronics ·X. A. Cao, E. B. Stokes, Peter Sandvik, N. R. Taskar, J. Kretchmer, D. Walker	2002	35
11	On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal Solid-State Electronics ·Igor Sankin, Jeff B. Casady, Grace A. DeSalvo, W. C.-Y. Lee, J. Kretchmer, J. Orr, António Augusto Ribeiro de Brito, Michael S. Mazzola, Stephen E. Saddow	2001	5
12	Switching characteristics of silicon carbide power PiN diodes Solid-State Electronics ·Ahmed Elasser, M. Ghezzo, I Sayek, J. Kretchmer, Edgar Saúl Vargas Martínez, D.M. Brown, T. Paul Chow	2000	11
13	Characterization of phosphorus implantation in 4H-SiC Journal of Electronic Materials ·V. Khemka, R. N. Patel, Olga Lidia Lópes-Gonzáles, T. Paul Chow, M. Ghezzo, J. Kretchmer	1999	42
14	Donor ion-implantation doping into SiC Journal of Electronic Materials ·Mulpuri V. Rao, Jesse B. Tucker, O. W. Holland, N. A. Papanicolaou, 刘加华, J. Kretchmer, M. Ghezzo	1999	16
15	Comparison of aluminum- and boron-implanted vertical 6H-SiC p+n junction diodes Solid-State Electronics ·Olga Lidia Lópes-Gonzáles, V. Khemka, R. Tyagi, T. Paul Chow, M. Ghezzo, Philip G. Neudeck, J. Kretchmer, Tingting Sui, D.M. Brown	1998	9
16	Nitrogen and aluminum implantation in high resistivity silicon carbide Journal of Applied Physics ·Daiane Andrade Melo, Mulpuri V. Rao, O. W. Holland, G. Kelner, 刘加华, J. Kretchmer, M. Ghezzo	1997	31
17	Al, Al/C and Al/Si implantations in 6H-SiC Journal of Electronic Materials ·Mulpuri V. Rao, Peter R. Griffiths, 覃玉荣, O. W. Holland, M. Ghezzo, J. Kretchmer, G. Kelner, Jaime A. Freitas	1996	33
18	Silicon carbide MOSFET technology Solid-State Electronics ·D.M. Brown, E. Downey, M. Ghezzo, J. Kretchmer, Chika Okasaka, Tingting Sui, 昭三平林	1996	65
19	Nitrogen-implanted SiC diodes using high-temperature implantation IEEE Electron Device Letters ·M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, Tingting Sui, D.L. Polla, H. Bakhru	1992	61
20	"Insulated gate bipolar transistor (IGBT) with a trench gate structure " H.-R. Chang, B. Jayant Baliga, J. Kretchmer, S. Faessel	1987	33

About J. Kretchmer

J. Kretchmer is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Bioengineering, having authored 42 papers that have together received 1.3k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (31 papers), Semiconductor materials and devices (22 papers), GaN-based semiconductor devices and materials (12 papers), Silicon and Solar Cell Technologies (7 papers), Semiconductor Quantum Structures and Devices (5 papers), Ga2O3 and related materials (5 papers), Electrostatic Discharge in Electronics (5 papers) and Thin-Film Transistor Technologies (4 papers). The work is most often cited by research in Condensed Matter Physics (449 citations), Electrical and Electronic Engineering (1.0k citations), Electronic, Optical and Magnetic Materials (217 citations), Atomic and Molecular Physics, and Optics (354 citations) and Ceramics and Composites (57 citations). J. Kretchmer has collaborated with scholars based in United States, India and Canada. Frequent co-authors include M. Ghezzo, X. A. Cao, D.M. Brown, S. F. LeBoeuf, E. Downey, D. Walker, E. B. Stokes, Peter M. Sandvik, T. Paul Chow and Mulpuri V. Rao. Their work appears in journals such as Solid-State Electronics, Journal of Electronic Materials, IEEE Electron Device Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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