Craig Capell

1.3k total citations
48 papers, 1.1k citations indexed

About

Craig Capell is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Craig Capell has authored 48 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Craig Capell's work include Silicon Carbide Semiconductor Technologies (48 papers), Semiconductor materials and devices (18 papers) and Multilevel Inverters and Converters (16 papers). Craig Capell is often cited by papers focused on Silicon Carbide Semiconductor Technologies (48 papers), Semiconductor materials and devices (18 papers) and Multilevel Inverters and Converters (16 papers). Craig Capell collaborates with scholars based in United States, China and Germany. Craig Capell's co-authors include John W. Palmour, Anant Agarwal, Sei‐Hyung Ryu, Michael O’Loughlin, Charles Scozzie, Charlotte Jonas, Jim Richmond, Lin Cheng, Albert A. Burk and Allen R. Hefner and has published in prestigious journals such as IEEE Electron Device Letters, Journal of Electronic Materials and Microelectronics Reliability.

In The Last Decade

Craig Capell

48 papers receiving 1.1k citations

Peers

Craig Capell

EEE

AMPO

CSE

EOMM

CMP

Aderinto Ogunniyi United States

Edward Van Brunt United States

Robert Callanan United States

Vipindas Pala United States

Scott Leslie United States

Tatsuhiko Fujihira Japan

Saeed Jahdi United Kingdom

C. Abbate Italy

Marina Antoniou United Kingdom

Shi Pu United States

Aderinto Ogunniyi United States

Craig Capell

730 ×0.7

EEE

69 ×0.7

AMPO

127 ×1.5

CSE

34 ×0.7

EOMM

26 ×1.0

CMP

Citations per year, relative to Craig Capell Craig Capell (= 1×) peers Aderinto Ogunniyi

Countries citing papers authored by Craig Capell

Since Specialization

Citations

This map shows the geographic impact of Craig Capell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Craig Capell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Craig Capell more than expected).

Fields of papers citing papers by Craig Capell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Craig Capell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Craig Capell. The network helps show where Craig Capell may publish in the future.

Co-authorship network of co-authors of Craig Capell

This figure shows the co-authorship network connecting the top 25 collaborators of Craig Capell. A scholar is included among the top collaborators of Craig Capell based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Craig Capell. Craig Capell is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ryu, Sei‐Hyung, Daniel J. Lichtenwalner, Edward Van Brunt, et al.. (2017). Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor. Materials science forum. 897. 587–590. 10 indexed citations

Ryu, Sei‐Hyung, Craig Capell, Charlotte Jonas, et al.. (2016). An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC N-IGBTs. Materials science forum. 858. 945–948. 10 indexed citations

Pala, Vipindas, Adam Barkley, Brett Hull, et al.. (2015). 900V silicon carbide MOSFETs for breakthrough power supply design. 4145–4150. 19 indexed citations

Brunt, Edward Van, Scott T. Allen, Albert A. Burk, et al.. (2014). 22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation. 358–361. 68 indexed citations

Cheng, Lin, Anant Agarwal, Craig Capell, et al.. (2013). 15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors. Materials science forum. 740-742. 978–981. 37 indexed citations

Ryu, Sei‐Hyung, Lin Cheng, Sarit Dhar, et al.. (2012). Development of 15 kV 4H-SiC IGBTs. Materials science forum. 717-720. 1135–1138. 40 indexed citations

Ryu, Sei‐Hyung, Craig Capell, Lin Cheng, et al.. (2012). High performance, ultra high voltage 4H-SiC IGBTs. 3603–3608. 45 indexed citations

Agarwal, Anant, Craig Capell, Lin Cheng, et al.. (2012). 12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination. Materials science forum. 717-720. 1151–1154. 20 indexed citations

Agarwal, Anant, Craig Capell, Lin Cheng, et al.. (2011). SiC super GTO thyristor technology development: Present status and future perspective. 1530–1535. 28 indexed citations

10.

Das, Mrinal K., Craig Capell, David Grider, et al.. (2011). 10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications. 2689–2692. 204 indexed citations

11.

Richmond, Jim, et al.. (2010). A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed. Materials science forum. 645-648. 1045–1048. 1 indexed citations

12.

Agarwal, Anant, Craig Capell, Jim Richmond, et al.. (2009). 9 kV, 1 cm×1 cm SiC super gto technology development for pulse power. 264–269. 31 indexed citations

13.

Husna, Fatima, Anant Agarwal, Aivars J. Lelis, et al.. (2007). Status of 1200V 4H-SiC Power DMOSFETs. 457 460. 1–2. 10 indexed citations

14.

Jonas, Charlotte, Craig Capell, Qingchun Zhang, et al.. (2007). 1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70. Journal of Electronic Materials. 37(5). 662–665. 19 indexed citations

15.

Agarwal, Anant, Fatima Husna, Jeremy S. Haley, et al.. (2006). First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs. Materials science forum. 527-529. 1413–1416. 1 indexed citations

16.

Krishnaswami, Sumi, Anant Agarwal, Craig Capell, et al.. (2005). 1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs. Materials science forum. 483-485. 901–904. 14 indexed citations

17.

Agarwal, Anant, Sei‐Hyung Ryu, Craig Capell, et al.. (2004). SiC BJT Technology for Power Switching and RF Applications. Materials science forum. 457-460. 1141–1144. 12 indexed citations

18.

Agarwal, Anant, Sei‐Hyung Ryu, Jim Richmond, et al.. (2004). Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC. 135–138. 16 indexed citations

19.

Agarwal, Anant, et al.. (2003). Power Amplification in UHF Band Using SiC RF Power BJTs. Materials science forum. 433-436. 785–788. 1 indexed citations

20.

Agarwal, Anant, et al.. (2003). Power amplification in UHF band using SiC RF power BJTs. 25. 41–49. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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