Daniel J. Lichtenwalner

3.3k citations

120 papers · 2.5k indexed · h-index 28

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Radiation Effects in Electronics
Electronic, Optical and Magnetic Materials top 10%

Papers in

Electrical and Electronic Engineering 101
- Semiconductor materials and devices 70
- Silicon Carbide Semiconductor Technologies 49
- Advancements in Semiconductor Devices and Circuit Design 27
- Ferroelectric and Negative Capacitance Devices 13
- Radiation Effects in Electronics 11
Electronic, Optical and Magnetic Materials 23
- Copper Interconnects and Reliability 17

Co-authors: Angus I. Kingon Orlando Auciello John W. Palmour R. Dat Brett Hull Scott T. Allen Veena Misra Edward Van Brunt
Journals: Applied Physics Letters (18 papers)Journal of Applied Physics (6 papers)IEEE Transactions on Electron Devices (4 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (4 papers)Integrated ferroelectrics (4 papers)
Partner nations: United States China Germany

In The Last Decade

Daniel J. Lichtenwalner

114 papers receiving 2.4k citations

Peers

Countries citing papers authored by Daniel J. Lichtenwalner

Since Specialization

Citations

This map shows the geographic impact of Daniel J. Lichtenwalner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel J. Lichtenwalner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel J. Lichtenwalner more than expected).

Fields of papers citing papers by Daniel J. Lichtenwalner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel J. Lichtenwalner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel J. Lichtenwalner. The network helps show where Daniel J. Lichtenwalner may publish in the future.

Co-authors

The 25 scholars most cited alongside Daniel J. Lichtenwalner, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Daniel J. Lichtenwalner Line = papers co-authored together Daniel J. Lichtenwalner links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Hemant Dixit, Daniel J. Lichtenwalner, Małgorzata Koszarek, Jeff Kim, 秀文竹井, Sei‐Hyung Ryu	2024	1
2	Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Ayan Biswas, Daniel J. Lichtenwalner, Suman Das, Svetozar Ivanov, Satyaki Ganguly, D. A. Gajewski	2024	1
3	Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC Journal of Electronic Materials ·Suman Das, Daniel J. Lichtenwalner, Hemant Dixit, Steven P. Rogers, Małgorzata Koszarek, Sei‐Hyung Ryu	2024	2
4	Reliability and Standardization for SiC Power Devices Materials science forum ·D. A. Gajewski, Satyaki Ganguly, Daniel J. Lichtenwalner, Edward Van Brunt, Brett Hull, Scott T. Allen, John W. Palmour	2023	3
5	650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout Key engineering materials ·Daniel J. Lichtenwalner, Satyaki Ganguly, T. Kubo, Éric Valdenaire, D. A. Gajewski, Sei‐Hyung Ryu, Brett Hull, Scott T. Allen, John W. Palmour	2023	1
6	Temperature Dependent Mobility Model for Predictive TCAD Simulations of 4H-SiC Materials science forum ·Hemant Dixit, Daniel J. Lichtenwalner, Asghar Nikpour, Jae Hyung Park, S. J. Rogers, Alfons Navarro Ponz, Sei‐Hyung Ryu	2023	2
7	Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs Materials science forum ·Daniel J. Lichtenwalner, Sei‐Hyung Ryu, Brett Hull, Scott T. Allen, John W. Palmour	2023	4
8	Temperature Dependent Electrical Properties of N-Type 4H-SiC Substrates Materials science forum ·Daniel J. Lichtenwalner, Jae Hyung Park, Steven P. Rogers, Hemant Dixit, Hubert SERVE, Alfons Navarro Ponz, Sei‐Hyung Ryu	2023	1
9	Reliability of SiC MOSFET with Danfoss Bond Buffer Technology in Automotive Traction Power Modules Hubert Göbel, Martin Becker, Mastunori SAWADA, Brett Hull, Shadi Sabri, Daniel J. Lichtenwalner, Khurshidakhon Egamberdiyeva	2019	10
10	The effects of radiation on the terrestrial operation of SiC MOSFETs Akin Akturk, J.M. McGarrity, Neil Goldsman, Daniel J. Lichtenwalner, Brett Hull, D.E. Grider, R. Wilkins	2018	12
11	Reliability studies of SiC vertical power MOSFETs Daniel J. Lichtenwalner, Brett Hull, Edward Van Brunt, Shadi Sabri, D. A. Gajewski, D.E. Grider, Scott T. Allen, John W. Palmour, Akin Akturk, J.M. McGarrity	2018	52
12	Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor Materials science forum ·Sei‐Hyung Ryu, Daniel J. Lichtenwalner, Edward Van Brunt, Craig Capell, Michael O’Loughlin, Charlotte Jonas, 昭博髙﨑, TM Benson, Jim Richmond, Albert A. Burk, Brett Hull, Heather O’Brien, Aderinto Ogunniyi, Aivars J. Lelis, Jeff B. Casady, David Grider, Scott T. Allen, John W. Palmour	2017	10
13	SiC power device reliability D. A. Gajewski, Brett Hull, Daniel J. Lichtenwalner, Sei‐Hyung Ryu, Abdul Ghofur Subrata, A. Naylor, Gangyao Wang, Scott T. Allen, John W. Palmour	2016	49
14	High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation Materials science forum ·Daniel J. Lichtenwalner, Vipindas Pala, Brett Hull, Scott T. Allen, John W. Palmour	2016	19
15	New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications Khurshidakhon Egamberdiyeva, Vipindas Pala, Daniel J. Lichtenwalner, Edward Van Brunt, Brett Hull, Gangyao Wang, Jim Richmond, Scott T. Allen, D.E. Grider, John W. Palmour	2015	79
16	Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV John W. Palmour, Lin Cheng, Vipindas Pala, Edward Van Brunt, Daniel J. Lichtenwalner, Chen Liu, Jim Richmond, Michael O’Loughlin, Sei‐Hyung Ryu, Scott T. Allen, Albert A. Burk, Charles Scozzie	2014	241
17	Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs Materials science forum ·Sarah K. Haney, Veena Misra, Daniel J. Lichtenwalner, Anant Agarwal	2013	3
18	Origin of multiplexing capabilities of multifrequency magnetic ratchets Physical Review E ·Ammar K.M.Al-Ba'aj, Mukarram Tahir, Daniel J. Lichtenwalner, Benjamin B. Yellen	2012	8
19	Resolution of the transfer direction of field-evaporated gold atoms for nanofabrication and microelectromechanical system applications Applied Physics Letters ·M.F. Sultanova, 缪素华, Daniel J. Lichtenwalner, J. Krim, Angus I. Kingon	2011	11
20	Investigation of the ablated flux characteristics during pulsed laser ablation deposition of multicomponent oxides Journal of Applied Physics ·Daniel J. Lichtenwalner, Orlando Auciello, R. Dat, Angus I. Kingon	1993	69

About Daniel J. Lichtenwalner

Daniel J. Lichtenwalner is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 120 papers that have together received 2.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (70 papers), Silicon Carbide Semiconductor Technologies (49 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers), Copper Interconnects and Reliability (17 papers), Electronic and Structural Properties of Oxides (16 papers), Ferroelectric and Negative Capacitance Devices (13 papers), Radiation Effects in Electronics (11 papers) and Ferroelectric and Piezoelectric Materials (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.0k citations), Electronic, Optical and Magnetic Materials (337 citations), Materials Chemistry (845 citations), Atomic and Molecular Physics, and Optics (360 citations) and Condensed Matter Physics (133 citations). Daniel J. Lichtenwalner has collaborated with scholars based in United States, China and Germany. Frequent co-authors include Angus I. Kingon, Orlando Auciello, John W. Palmour, R. Dat, Brett Hull, Scott T. Allen, Veena Misra, Edward Van Brunt, Rahul Suri and Jesse S. Jur. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and Integrated ferroelectrics.

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