G.W. Eldridge

502 total citations
27 papers, 349 citations indexed

About

G.W. Eldridge is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, G.W. Eldridge has authored 27 papers receiving a total of 349 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in G.W. Eldridge's work include Semiconductor materials and devices (13 papers), Semiconductor materials and interfaces (10 papers) and Silicon Carbide Semiconductor Technologies (7 papers). G.W. Eldridge is often cited by papers focused on Semiconductor materials and devices (13 papers), Semiconductor materials and interfaces (10 papers) and Silicon Carbide Semiconductor Technologies (7 papers). G.W. Eldridge collaborates with scholars based in United States. G.W. Eldridge's co-authors include R.N. Thomas, D.L. Barrett, H. McD. Hobgood, Anant Agarwal, S. R. Seshadri, Lars Wåhlin, R.L. Messham, R.C. Clarke, T.T. Braggins and M.C. Driver and has published in prestigious journals such as Applied Physics Letters, Proceedings of the IEEE and Journal of The Electrochemical Society.

In The Last Decade

G.W. Eldridge

25 papers receiving 318 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G.W. Eldridge United States 12 297 181 102 28 26 27 349
P. E. R. Nordquist United States 7 261 0.9× 130 0.7× 67 0.7× 28 1.0× 15 0.6× 21 301
M. Hockly United Kingdom 9 240 0.8× 246 1.4× 91 0.9× 32 1.1× 22 0.8× 20 318
A. Piotrowska Poland 8 303 1.0× 298 1.6× 91 0.9× 36 1.3× 13 0.5× 24 387
Fumiaki Hyuga Japan 12 283 1.0× 249 1.4× 81 0.8× 30 1.1× 27 1.0× 37 348
V. G. Riggs United States 11 337 1.1× 299 1.7× 49 0.5× 22 0.8× 22 0.8× 12 383
S. Tohno Japan 12 245 0.8× 156 0.9× 165 1.6× 11 0.4× 31 1.2× 41 339
A. Poudoulec France 11 302 1.0× 218 1.2× 53 0.5× 38 1.4× 37 1.4× 32 414
M. K. Linnarsson Sweden 10 341 1.1× 115 0.6× 73 0.7× 50 1.8× 68 2.6× 17 408
A. Pesek Austria 12 208 0.7× 203 1.1× 156 1.5× 61 2.2× 21 0.8× 27 331
W. Nijman Netherlands 8 245 0.8× 246 1.4× 100 1.0× 37 1.3× 26 1.0× 12 347

Countries citing papers authored by G.W. Eldridge

Since Specialization
Citations

This map shows the geographic impact of G.W. Eldridge's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.W. Eldridge with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.W. Eldridge more than expected).

Fields of papers citing papers by G.W. Eldridge

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.W. Eldridge. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.W. Eldridge. The network helps show where G.W. Eldridge may publish in the future.

Co-authorship network of co-authors of G.W. Eldridge

This figure shows the co-authorship network connecting the top 25 collaborators of G.W. Eldridge. A scholar is included among the top collaborators of G.W. Eldridge based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G.W. Eldridge. G.W. Eldridge is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Kolodzey, J., C.P. Swann, G. DeSalvo, et al.. (2002). A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation. Journal of Electronic Materials. 31(5). 346–350. 11 indexed citations
3.
Bojko, R., R.R. Siergiej, G.W. Eldridge, et al.. (2002). Recent progress in 4H-SiC static induction transistors for high frequency power generation. 96–97. 6 indexed citations
4.
Agarwal, Anant, et al.. (2002). Ion-implanted static induction transistors in 4H-SiC. 94–95. 2 indexed citations
5.
Adam, J.D., et al.. (2002). Monolithic integration of an X-band circulator with GaAs MMICs. 97–98. 13 indexed citations
6.
Kolodzey, J., et al.. (2001). The electrical characteristics of silicon carbide alloyed with germanium. Applied Surface Science. 175-176. 505–511. 14 indexed citations
7.
Seshadri, S. R., G.W. Eldridge, & Anant Agarwal. (1998). Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H–SiC. Applied Physics Letters. 72(16). 2026–2028. 38 indexed citations
8.
Buhay, H., J.D. Adam, N Doyle, et al.. (1995). Thick yttrium-iron-garnet (YIG) films produced by pulsed laser deposition (PLD) for integration applications. IEEE Transactions on Magnetics. 31(6). 3832–3834. 30 indexed citations
9.
Eldridge, G.W., D.L. Barrett, Albert A. Burk, et al.. (1993). High power silicon carbide IMPATT diode development. 1 indexed citations
10.
Eldridge, G.W., et al.. (1992). Carrier diffusion effects in III–V semiconductor structures measured by the point contact current voltage technique. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(1). 463–467. 1 indexed citations
11.
Thomas, R.N., et al.. (1988). Status of device-qualified GaAs substrate technology for GaAs integrated circuits. Proceedings of the IEEE. 76(7). 778–791. 13 indexed citations
12.
Clarke, R.C., D.L. Barrett, G.W. Eldridge, & R.N. Thomas. (1987). Subsurface Damage in Semi-Insulating GaAs Substrates. 41–44. 1 indexed citations
13.
Thomas, R.N., et al.. (1986). Growth and properties of large-diameter indium lattice-hardened GaAs crystals. Journal of Crystal Growth. 76(2). 217–232. 30 indexed citations
14.
Barrett, D.L., et al.. (1985). Effect of Dislocations on Gallium Arsenide FETs. 1 indexed citations
15.
Barrett, D.L., et al.. (1984). Low dislocation, semi-insulating In-doped GaAs crystals. Journal of Crystal Growth. 70(1-2). 179–184. 42 indexed citations
16.
Clarke, R.C. & G.W. Eldridge. (1984). Transient capless annealing of ion-implanted GaAs. IEEE Transactions on Electron Devices. 31(8). 1077–1082. 8 indexed citations
17.
Driver, M.C., G.W. Eldridge, & J.E. Degenford. (1982). Broadband monolithic integrated power amplifiers in gallium arsenide. Microwave journal. 25. 87–94. 1 indexed citations
18.
Schroder, D.K., et al.. (1981). Low leakage current GaAs diodes. IEEE Transactions on Electron Devices. 28(7). 796–800. 12 indexed citations
19.
Thomas, R.N., H. McD. Hobgood, G.W. Eldridge, D.L. Barrett, & T.T. Braggins. (1981). Growth and characterization of large diameter undoped semi-insulating GaAs for direct ion implanted FET technology. Solid-State Electronics. 24(5). 387–399. 30 indexed citations
20.
Eldridge, G.W., et al.. (1975). Photoluminescence of Epitaxial ZnSe Layers Grown on Ge. Journal of The Electrochemical Society. 122(10). 1365–1370. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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