Aderinto Ogunniyi

893 total citations
70 papers, 739 citations indexed

About

Aderinto Ogunniyi is a scholar working on Electrical and Electronic Engineering, Control and Systems Engineering and Aerospace Engineering. According to data from OpenAlex, Aderinto Ogunniyi has authored 70 papers receiving a total of 739 indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Electrical and Electronic Engineering, 34 papers in Control and Systems Engineering and 9 papers in Aerospace Engineering. Recurrent topics in Aderinto Ogunniyi's work include Silicon Carbide Semiconductor Technologies (66 papers), Electrostatic Discharge in Electronics (36 papers) and Pulsed Power Technology Applications (34 papers). Aderinto Ogunniyi is often cited by papers focused on Silicon Carbide Semiconductor Technologies (66 papers), Electrostatic Discharge in Electronics (36 papers) and Pulsed Power Technology Applications (34 papers). Aderinto Ogunniyi collaborates with scholars based in United States, China and Russia. Aderinto Ogunniyi's co-authors include Heather O’Brien, Aivars J. Lelis, Daniel B. Habersat, Moshe Gurfinkel, Ronald Green, Neil Goldsman, John S. Suehle, Charles Scozzie, Stephen Bayne and Anant Agarwal and has published in prestigious journals such as IEEE Transactions on Power Electronics, IEEE Transactions on Electron Devices and Review of Scientific Instruments.

In The Last Decade

Aderinto Ogunniyi

67 papers receiving 715 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Aderinto Ogunniyi United States 12 730 127 69 34 26 70 739
Craig Capell United States 20 1.1k 1.5× 87 0.7× 96 1.4× 49 1.4× 26 1.0× 48 1.1k
Saeed Jahdi United Kingdom 15 921 1.3× 51 0.4× 58 0.8× 35 1.0× 81 3.1× 80 957
C. Abbate Italy 15 658 0.9× 31 0.2× 29 0.4× 24 0.7× 125 4.8× 46 674
Charlotte Jonas United States 16 693 0.9× 27 0.2× 50 0.7× 42 1.2× 10 0.4× 37 697
Marina Antoniou United Kingdom 16 780 1.1× 24 0.2× 74 1.1× 42 1.2× 34 1.3× 95 802
Shi Pu United States 14 715 1.0× 20 0.2× 41 0.6× 11 0.3× 71 2.7× 27 736
Alexander Bolotnikov United States 14 442 0.6× 13 0.1× 64 0.9× 40 1.2× 29 1.1× 36 471
Per Ranstad Sweden 13 543 0.7× 44 0.3× 18 0.3× 10 0.3× 11 0.4× 41 549
Umamaheswara Vemulapati Switzerland 12 610 0.8× 35 0.3× 42 0.6× 28 0.8× 38 1.5× 41 628
Xiaorui Xu China 10 247 0.3× 65 0.5× 33 0.5× 63 1.9× 100 3.8× 39 299

Countries citing papers authored by Aderinto Ogunniyi

Since Specialization
Citations

This map shows the geographic impact of Aderinto Ogunniyi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Aderinto Ogunniyi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Aderinto Ogunniyi more than expected).

Fields of papers citing papers by Aderinto Ogunniyi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Aderinto Ogunniyi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Aderinto Ogunniyi. The network helps show where Aderinto Ogunniyi may publish in the future.

Co-authorship network of co-authors of Aderinto Ogunniyi

This figure shows the co-authorship network connecting the top 25 collaborators of Aderinto Ogunniyi. A scholar is included among the top collaborators of Aderinto Ogunniyi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Aderinto Ogunniyi. Aderinto Ogunniyi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bayne, Stephen, et al.. (2021). SiC GTOs Thyristor for Long Term Reliability on Pulsed Power Application Test. 1–4. 1 indexed citations
2.
Bayne, Stephen, et al.. (2020). Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions. IEEE Transactions on Plasma Science. 48(11). 3962–3967. 11 indexed citations
3.
Ogunniyi, Aderinto, Heather O’Brien, Sei‐Hyung Ryu, & Jim Richmond. (2019). High-Power Pulsed Evaluation of High-Voltage SiC N-GTO. 425–429. 4 indexed citations
4.
O’Brien, Heather, et al.. (2017). SiC MOSFETs designed and evaluated for linear mode operation. 153–157. 2 indexed citations
5.
Ryu, Sei‐Hyung, Daniel J. Lichtenwalner, Edward Van Brunt, et al.. (2017). Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor. Materials science forum. 897. 587–590. 10 indexed citations
6.
Bayne, Stephen, et al.. (2017). An open circuit voltage decay system for performing injection dependent lifetime spectroscopy. Review of Scientific Instruments. 88(9). 95105–95105. 4 indexed citations
7.
Ogunniyi, Aderinto, et al.. (2016). Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs. Zenodo (CERN European Organization for Nuclear Research). 55–58. 3 indexed citations
8.
9.
O’Brien, Heather, et al.. (2015). Solid-state Marx generator with 24 KV 4H-SIC IGBTs. 1–5. 9 indexed citations
10.
Pushpakaran, Bejoy N., Stephen Bayne, & Aderinto Ogunniyi. (2014). Thermal analysis of 4H-SiC DMOSFET structure under resistive switching. 523–526. 4 indexed citations
11.
Ogunniyi, Aderinto, et al.. (2014). Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors. 705–708. 8 indexed citations
12.
Lawson, Kevin, Stephen Bayne, Michael Giesselmann, et al.. (2013). Design of an advanced modular automated evaluation system for experimental high power SGTOs. 1–4. 4 indexed citations
13.
Cheng, Lin, Anant Agarwal, Craig Capell, et al.. (2013). 15 kV, Large Area (1 cm<sup>2</sup>), 4H-SiC p-Type Gate Turn-Off Thyristors. Materials science forum. 740-742. 978–981. 37 indexed citations
14.
Agarwal, Anant, Craig Capell, Lin Cheng, et al.. (2011). SiC super GTO thyristor technology development: Present status and future perspective. 1530–1535. 28 indexed citations
15.
O’Brien, Heather, et al.. (2011). Review of high voltage silicon carbide device research at the army research laboratory. 1–1. 1 indexed citations
16.
O’Brien, Heather, et al.. (2009). Wide-pulse evaluation of 0.5 cm<sup>2</sup> silicon carbide SGTO. 260–263. 8 indexed citations
17.
O’Brien, Heather, et al.. (2009). Silicon diode evaluated as rectifier for wide-pulse switching applications. 627–630. 1 indexed citations
18.
Lelis, Aivars J., Daniel B. Habersat, Ronald Green, et al.. (2008). Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements. IEEE Transactions on Electron Devices. 55(8). 1835–1840. 267 indexed citations
19.
Lelis, Aivars J., Daniel B. Habersat, Aderinto Ogunniyi, et al.. (2008). Effect of SiC Power DMOSFET Threshold-Voltage Instability. MRS Proceedings. 1069. 4 indexed citations
20.
Lelis, Aivars J., Daniel B. Habersat, Aderinto Ogunniyi, et al.. (2007). Time dependence of bias-stress induced threshold-voltage instability measurements. 1–2. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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