M.F. Brady

1.1k total citations
23 papers, 838 citations indexed

About

M.F. Brady is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Ceramics and Composites. According to data from OpenAlex, M.F. Brady has authored 23 papers receiving a total of 838 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 6 papers in Electronic, Optical and Magnetic Materials and 3 papers in Ceramics and Composites. Recurrent topics in M.F. Brady's work include Silicon Carbide Semiconductor Technologies (19 papers), Semiconductor materials and devices (7 papers) and Copper Interconnects and Reliability (6 papers). M.F. Brady is often cited by papers focused on Silicon Carbide Semiconductor Technologies (19 papers), Semiconductor materials and devices (7 papers) and Copper Interconnects and Reliability (6 papers). M.F. Brady collaborates with scholars based in China, United States and United Kingdom. M.F. Brady's co-authors include V. F. Tsvetkov, R Glass, H. McD. Hobgood, Arthur R. Smith, R. M. Feenstra, V. Ramachandran, David W. Greve, D. Henshall, Jason R. Jenny and St.G. Müller and has published in prestigious journals such as Computers in Human Behavior, Green Chemistry and Journal of Crystal Growth.

In The Last Decade

M.F. Brady

23 papers receiving 797 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.F. Brady China 16 683 187 141 115 114 23 838
Sandrine Juillaguet France 18 872 1.3× 312 1.7× 283 2.0× 318 2.8× 171 1.5× 121 1.1k
J. Wójcik Canada 16 434 0.6× 446 2.4× 96 0.7× 72 0.6× 24 0.2× 94 720
Tamara Isaacs‐Smith United States 19 1.0k 1.5× 246 1.3× 305 2.2× 259 2.3× 159 1.4× 81 1.2k
Valdas Jokubavičius Sweden 15 535 0.8× 405 2.2× 114 0.8× 210 1.8× 47 0.4× 61 747
M. G. Mynbaeva Russia 13 421 0.6× 335 1.8× 65 0.5× 153 1.3× 226 2.0× 73 569
R. Bożek Poland 18 616 0.9× 1.0k 5.5× 345 2.4× 195 1.7× 178 1.6× 76 1.3k
Yogendra Prasad Yadava Brazil 14 205 0.3× 288 1.5× 26 0.2× 164 1.4× 201 1.8× 92 680
M. Wzorek Poland 14 405 0.6× 228 1.2× 177 1.3× 157 1.4× 83 0.7× 71 544
Kok Wai Chew Singapore 14 558 0.8× 350 1.9× 54 0.4× 39 0.3× 29 0.3× 74 783
Yukihiko Watanabe Japan 12 494 0.7× 69 0.4× 118 0.8× 88 0.8× 66 0.6× 38 563

Countries citing papers authored by M.F. Brady

Since Specialization
Citations

This map shows the geographic impact of M.F. Brady's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.F. Brady with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.F. Brady more than expected).

Fields of papers citing papers by M.F. Brady

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.F. Brady. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.F. Brady. The network helps show where M.F. Brady may publish in the future.

Co-authorship network of co-authors of M.F. Brady

This figure shows the co-authorship network connecting the top 25 collaborators of M.F. Brady. A scholar is included among the top collaborators of M.F. Brady based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.F. Brady. M.F. Brady is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Brady, M.F., et al.. (2022). Aptitude Requirements for Human Operators in Human–Automation Interaction. 12(1). 50–62. 2 indexed citations
2.
Leonard, R.T., Michael J. Paisley, Michael O’Loughlin, et al.. (2009). Defect Status in SiC Manufacturing. Materials science forum. 615-617. 3–6. 17 indexed citations
3.
Leonard, R.T., Adrian R. Powell, C. Basceri, et al.. (2008). 100 mm 4HN-SiC Wafers with Zero Micropipe Density. Materials science forum. 600-603. 7–10. 45 indexed citations
4.
Müller, St.G., M.F. Brady, Albert A. Burk, et al.. (2006). Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective. Superlattices and Microstructures. 40(4-6). 195–200. 20 indexed citations
5.
Greenwell, H. Chris, William Jones, Dennis N. Stamires, Paul O’Connor, & M.F. Brady. (2006). A one-pot synthesis of hybrid organo-layered double hydroxide catalyst precursors. Green Chemistry. 8(12). 1067–1067. 25 indexed citations
6.
Burk, Albert A., Michael O’Loughlin, Michael J. Paisley, et al.. (2006). SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers. Materials science forum. 527-529. 159–162. 4 indexed citations
7.
Burk, Albert A., Michael O’Loughlin, Michael J. Paisley, et al.. (2005). Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor. Materials science forum. 483-485. 137–140. 10 indexed citations
8.
Müller, St.G., Joseph J. Sumakeris, M.F. Brady, et al.. (2004). Defects in SiC substrates and epitaxial layers affecting semiconductor device performance. The European Physical Journal Applied Physics. 27(1-3). 29–35. 19 indexed citations
9.
Hobgood, H. McD., M.F. Brady, Jason R. Jenny, et al.. (2004). Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances. Materials science forum. 457-460. 3–8. 32 indexed citations
10.
Powell, Adrian R., R.T. Leonard, M.F. Brady, et al.. (2004). Large Diameter 4H-SiC Substrates for Commercial Power Applications. Materials science forum. 457-460. 41–46. 20 indexed citations
11.
Powell, Adrian R., Joseph J. Sumakeris, R.T. Leonard, et al.. (2004). Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications. MRS Proceedings. 815. 8 indexed citations
12.
Müller, S., M.F. Brady, R Glass, et al.. (2003). Sublimation-Grown Semi-Insulating SiC for High Frequency Devices. Materials science forum. 433-436. 39–44. 47 indexed citations
13.
Müller, S., M.F. Brady, R Glass, et al.. (2002). High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production. Materials science forum. 389-393. 23–28. 37 indexed citations
14.
Carter, Calvin H., R Glass, M.F. Brady, et al.. (2001). Large Diameter, Low Defect Silicon Carbide Boule Growth. Materials science forum. 353-356. 3–6. 14 indexed citations
15.
Müller, St.G., R Glass, H. McD. Hobgood, et al.. (2001). Progress in the industrial production of SiC substrates for semiconductor devices. Materials Science and Engineering B. 80(1-3). 327–331. 36 indexed citations
16.
Mitchel, W. C., A. Saxler, R. Perrin, et al.. (2000). Vanadium-free Semi-insulating 4H-SiC Substrates. Materials science forum. 338-342. 21–24. 18 indexed citations
17.
Hobgood, H. McD., M.F. Brady, R Glass, et al.. (2000). Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications. Materials science forum. 338-342. 3–8. 65 indexed citations
18.
Müller, St.G., R Glass, H. McD. Hobgood, et al.. (2000). The status of SiC bulk growth from an industrial point of view. Journal of Crystal Growth. 211(1-4). 325–332. 92 indexed citations
19.
Ramachandran, V., M.F. Brady, Arthur R. Smith, R. M. Feenstra, & David W. Greve. (1998). Preparation of atomically flat surfaces on silicon carbide using hydrogen etching. Journal of Electronic Materials. 27(4). 308–312. 173 indexed citations
20.
Tsvetkov, V. F., D. Henshall, M.F. Brady, R Glass, & C. H. Carter. (1998). A Theoretical and Empirical Perspective of SiC Bulk Growth. MRS Proceedings. 512. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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