S. Feste

511 total citations
27 papers, 391 citations indexed

About

S. Feste is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Feste has authored 27 papers receiving a total of 391 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 14 papers in Biomedical Engineering and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Feste's work include Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (15 papers) and Nanowire Synthesis and Applications (11 papers). S. Feste is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (15 papers) and Nanowire Synthesis and Applications (11 papers). S. Feste collaborates with scholars based in Germany, Switzerland and France. S. Feste's co-authors include S. Mantl, Joachim Knoch, Dan Buca, Qing‐Tai Zhao, Christian G. Schroer, Michael Drakopoulos, T. F. Günzler, O. Kurapova, B. Lengeler and A. Snigirev and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

S. Feste

26 papers receiving 380 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Feste Germany 12 259 148 117 103 57 27 391
Megan O. Hill United States 10 170 0.7× 164 1.1× 49 0.4× 133 1.3× 49 0.9× 15 320
Åke Andersson Sweden 7 242 0.9× 67 0.5× 136 1.2× 94 0.9× 36 0.6× 29 326
Naresh Kujala United States 11 91 0.4× 39 0.3× 194 1.7× 42 0.4× 57 1.0× 29 255
Rainer Wanzenberg Germany 5 97 0.4× 36 0.2× 66 0.6× 43 0.4× 27 0.5× 32 183
Simone Sala Sweden 9 47 0.2× 71 0.5× 181 1.5× 46 0.4× 68 1.2× 22 271
Michele Swiggers United States 7 151 0.6× 27 0.2× 108 0.9× 59 0.6× 62 1.1× 7 257
N. Hartmann Germany 3 58 0.2× 33 0.2× 49 0.4× 73 0.7× 35 0.6× 3 155
W. Brefeld Germany 8 110 0.4× 45 0.3× 130 1.1× 38 0.4× 32 0.6× 24 226
T. M. Levin United States 7 83 0.3× 23 0.2× 50 0.4× 58 0.6× 35 0.6× 21 189
Yuya Kubota Japan 8 63 0.2× 23 0.2× 66 0.6× 79 0.8× 24 0.4× 40 202

Countries citing papers authored by S. Feste

Since Specialization
Citations

This map shows the geographic impact of S. Feste's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Feste with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Feste more than expected).

Fields of papers citing papers by S. Feste

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Feste. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Feste. The network helps show where S. Feste may publish in the future.

Co-authorship network of co-authors of S. Feste

This figure shows the co-authorship network connecting the top 25 collaborators of S. Feste. A scholar is included among the top collaborators of S. Feste based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Feste. S. Feste is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schmidt, Heidemarie, et al.. (2013). Kelvin probe force microscopy for characterizing doped semiconductors for future sensor applications in nano- and biotechnology. Applied Surface Science. 281. 24–29. 5 indexed citations
2.
Zhao, Qing‐Tai, S. Feste, Lars Knoll, et al.. (2011). NiSi nano-contacts to strained and unstrained silicon nanowires. 1–3. 3 indexed citations
3.
Pud, Sergii, M. V. Petrychuk, S. Feste, et al.. (2011). Noise spectroscopy of traps in silicon nanowire field-effect transistors. 242–245. 2 indexed citations
4.
5.
Lupták, R., J. M. J. Lopes, St. Lenk, et al.. (2011). Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 01A301–01A301. 5 indexed citations
6.
Zhao, Qing‐Tai, S. Feste, Lars Knoll, et al.. (2010). Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts. Nanotechnology. 21(10). 105701–105701. 19 indexed citations
7.
Feste, S., Joachim Knoch, Dan Buca, et al.. (2010). Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation. Journal of Applied Physics. 107(4). 18 indexed citations
8.
9.
Feste, S. & S. Mantl. (2009). Physical investigations of novel materials and structures for Nano-MOSFETs. RWTH Publications (RWTH Aachen). 1 indexed citations
10.
Feste, S., et al.. (2009). Silicon nanowire FETs with uniaxial tensile strain. Solid-State Electronics. 53(12). 1257–1262. 23 indexed citations
11.
12.
Feste, S., et al.. (2009). Strained and unstrained Si nanowire FETs. 323–326. 4 indexed citations
13.
Feste, S., et al.. (2009). Impact of variability on the performance of SOI Schottky barrier MOSFETs. Solid-State Electronics. 53(4). 418–423. 16 indexed citations
14.
Feste, S., et al.. (2008). Variability in SOI Schottky barrier MOSFETs. 27–30. 2 indexed citations
15.
Reiche, Manfred, Cameliu Himcinschi, U. Gösele, et al.. (2007). Strained Silicon-On-Insulator - Fabrication and Characterization. ECS Transactions. 6(4). 339–344. 8 indexed citations
16.
Buca, Dan, B. Holländer, S. Feste, et al.. (2007). Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers. Applied Physics Letters. 90(3). 22 indexed citations
17.
Knoch, Joachim, et al.. (2007). Dopant segregation in SOI Schottky-barrier MOSFETs. Microelectronic Engineering. 84(11). 2563–2571. 13 indexed citations
18.
Buca, Dan, S. Feste, B. Holländer, et al.. (2005). Growth of strained Si on He ion implanted Si/SiGe heterostructures. Solid-State Electronics. 50(1). 32–37. 20 indexed citations
19.
Schroer, Christian G., T. F. Günzler, Marion Kuhlmann, et al.. (2004). Fluorescence microtomography using nanofocusing refractive x-ray lenses. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5535. 162–162. 2 indexed citations
20.
Schroer, Christian G., M. Kuhlmann, T. F. Günzler, et al.. (2003). Nanofocusing parabolic refractive x-ray lenses. Applied Physics Letters. 82(9). 1485–1487. 125 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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