S. Flachowsky

1.3k total citations
24 papers, 1.0k citations indexed

About

S. Flachowsky is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Ceramics and Composites. According to data from OpenAlex, S. Flachowsky has authored 24 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 1 paper in Ceramics and Composites. Recurrent topics in S. Flachowsky's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). S. Flachowsky is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). S. Flachowsky collaborates with scholars based in Germany, United States and Italy. S. Flachowsky's co-authors include Stefan Slesazeck, Johannes Müller, P. Polakowski, Thomas Mikolajick, Stefan Müller, Halid Mulaosmanovic, J. Ocker, Ralf van Bentum, Uwe Schroeder and Martin Trentzsch and has published in prestigious journals such as ACS Applied Materials & Interfaces, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

S. Flachowsky

24 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Flachowsky Germany 11 1.0k 493 65 28 27 24 1.0k
Evelyn T. Breyer Germany 16 1.0k 1.0× 476 1.0× 55 0.8× 14 0.5× 31 1.1× 28 1.0k
Ralf van Bentum Germany 9 1.1k 1.1× 689 1.4× 37 0.6× 20 0.7× 21 0.8× 14 1.2k
Min‐Cheng Chen Taiwan 14 805 0.8× 258 0.5× 99 1.5× 22 0.8× 46 1.7× 34 850
Yu-Hung Liao United States 17 867 0.9× 399 0.8× 75 1.2× 18 0.6× 12 0.4× 26 884
Kai‐Shin Li Taiwan 13 739 0.7× 302 0.6× 59 0.9× 44 1.6× 51 1.9× 36 804
Ava J. Tan United States 16 955 0.9× 521 1.1× 32 0.5× 17 0.6× 12 0.4× 20 973
Jiuren Zhou China 23 1.2k 1.2× 614 1.2× 132 2.0× 51 1.8× 32 1.2× 65 1.3k
Chang-Hsien Lin Taiwan 8 497 0.5× 199 0.4× 33 0.5× 17 0.6× 47 1.7× 20 526
Gaobo Xu China 13 648 0.6× 157 0.3× 91 1.4× 33 1.2× 16 0.6× 89 677
J. Ocker Germany 11 1.3k 1.3× 701 1.4× 50 0.8× 14 0.5× 52 1.9× 21 1.4k

Countries citing papers authored by S. Flachowsky

Since Specialization
Citations

This map shows the geographic impact of S. Flachowsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Flachowsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Flachowsky more than expected).

Fields of papers citing papers by S. Flachowsky

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Flachowsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Flachowsky. The network helps show where S. Flachowsky may publish in the future.

Co-authorship network of co-authors of S. Flachowsky

This figure shows the co-authorship network connecting the top 25 collaborators of S. Flachowsky. A scholar is included among the top collaborators of S. Flachowsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Flachowsky. S. Flachowsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mulaosmanovic, Halid, J. Ocker, Stefan Müller, et al.. (2017). Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors. ACS Applied Materials & Interfaces. 9(4). 3792–3798. 273 indexed citations
2.
Müller, Johannes, P. Polakowski, Stefan Müller, et al.. (2016). High endurance strategies for hafnium oxide based ferroelectric field effect transistor. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–7. 88 indexed citations
3.
Mueller, Stefan, Stefan Slesazeck, S. Flachowsky, et al.. (2016). Correlation between the macroscopic ferroelectric material properties of Si:HfO 2 and the statistics of 28 nm FeFET memory arrays. Ferroelectrics. 497(1). 42–51. 21 indexed citations
4.
Trentzsch, Martin, S. Flachowsky, Ralf P. Richter, et al.. (2016). A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 11.5.1–11.5.4. 303 indexed citations
5.
Mueller, Stefan, Stefan Slesazeck, Thomas Mikolajick, et al.. (2015). Next-generation ferroelectric memories based on FE-HfO2. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 233–236. 25 indexed citations
6.
Mulaosmanovic, Halid, Stefan Slesazeck, J. Ocker, et al.. (2015). Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 26.8.1–26.8.3. 115 indexed citations
7.
Müller, Johannes, P. Polakowski, Jan Paul, et al.. (2015). (Invited) Integration Challenges of Ferroelectric Hafnium Oxide Based Embedded Memory. ECS Transactions. 69(3). 85–95. 23 indexed citations
8.
Mikolajick, Thomas, Stefan Müller, Tony Schenk, et al.. (2014). Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors. Advances in science and technology. 95. 136–145. 60 indexed citations
9.
Flachowsky, S., et al.. (2013). Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks. Solid-State Electronics. 88. 27–31. 1 indexed citations
10.
Baldauf, Tim, A. Wei, S. Flachowsky, et al.. (2012). Strained isolation oxide as novel overall stress element for Tri-Gate transistors of 22nm CMOS and beyond. 61–63. 3 indexed citations
11.
Flachowsky, S., et al.. (2011). Mechanism of Stress Memorization Technique (SMT) and Method to Maximize Its Effect. IEEE Electron Device Letters. 32(4). 467–469. 10 indexed citations
12.
Baldauf, Tim, A. Wei, S. Flachowsky, et al.. (2011). Study of 22/20nm Tri-Gate transistors compatible in a low-cost hybrid FinFET/planar CMOS process. 1–2. 2 indexed citations
13.
Baldauf, Tim, A. Wei, T. Herrmann, et al.. (2011). Suppression of the corner effects in a 22 nm hybrid Tri-Gate/planar process. 6. 1–4. 4 indexed citations
14.
Flachowsky, S., et al.. (2010). Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET. IEEE Transactions on Electron Devices. 57(6). 1343–1354. 53 indexed citations
15.
Flachowsky, S., et al.. (2010). Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(1). C1G12–C1G17. 8 indexed citations
16.
Flachowsky, S., et al.. (2010). Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(1). C1I12–C1I16. 3 indexed citations
17.
18.
Naumann, Andreas, et al.. (2009). SiGe channels for higher mobility CMOS devices. MRS Proceedings. 1194. 1 indexed citations
19.
Sekar, Karuppanan, et al.. (2008). Optimization of ClusterCarbon™ process parameters for strained Si lattice. Materials Science and Engineering B. 154-155. 122–125. 1 indexed citations
20.
Flachowsky, S., et al.. (2008). Gate length scaling trends of drive current enhancement in CMOSFETs with dual stress overlayers and embedded-SiGe. Materials Science and Engineering B. 154-155. 98–101. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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