S. Flachowsky

1.3k citations

24 papers · 1.0k indexed · h-index 11

Co-authors: Stefan Slesazeck Johannes Müller P. Polakowski Thomas Mikolajick Stefan Müller Halid Mulaosmanovic J. Ocker Ralf van Bentum
Topics: Semiconductor materials and devices (22 papers)Advancements in Semiconductor Devices and Circuit Design (15 papers)Ferroelectric and Negative Capacitance Devices (9 papers)
Cited by: Electrical and Electronic Engineering Materials Chemistry Structural Biology
Journals: ACS Applied Materials & Interfaces IEEE Transactions on Electron Devices IEEE Electron Device Letters
Partner nations: Germany United States Italy

In The Last Decade

S. Flachowsky

24 papers receiving 1.0k citations

Peers

Countries citing papers authored by S. Flachowsky

Since Specialization

Citations

This map shows the geographic impact of S. Flachowsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Flachowsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Flachowsky more than expected).

Fields of papers citing papers by S. Flachowsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Flachowsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Flachowsky. The network helps show where S. Flachowsky may publish in the future.

Co-authorship network of co-authors of S. Flachowsky

This figure shows the co-authorship network connecting the top 25 collaborators of S. Flachowsky. A scholar is included among the top collaborators of S. Flachowsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Flachowsky. S. Flachowsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors 2017 ·ACS Applied Materials & Interfaces ·Halid Mulaosmanovic,J. Ocker,Stefan Müller,Uwe Schroeder,Johannes Müller,P. Polakowski,S. Flachowsky,Ralf van Bentum,Thomas Mikolajick,Stefan Slesazeck	273
2	High endurance strategies for hafnium oxide based ferroelectric field effect transistor 2016 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Johannes Müller,P. Polakowski,Stefan Müller,Halid Mulaosmanovic,J. Ocker,Thomas Mikolajick,Stefan Slesazeck,S. Flachowsky,Martin Trentzsch	88
3	Correlation between the macroscopic ferroelectric material properties of Si:HfO ₂ and the statistics of 28 nm FeFET memory arrays 2016 ·Ferroelectrics ·Stefan Mueller,Stefan Slesazeck,(unknown),S. Flachowsky,P. Polakowski,Paul Jarman,Elliot J. Smith,Johannes Müller,Thomas Mikolajick	21
4	A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs 2016 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Martin Trentzsch,S. Flachowsky,Ralf P. Richter,Paul Jarman,(unknown),Dirk Utess,Sören Jansen,Halid Mulaosmanovic,Stefan Müller,Stefan Slesazeck,J. Ocker,Marko Noack,Johannes Müller,P. Polakowski,Jörg Schreiter,Sebastian Beyer,Thomas Mikolajick,B. Rice	303
5	Next-generation ferroelectric memories based on FE-HfO₂ 2015 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Stefan Mueller,Stefan Slesazeck,Thomas Mikolajick,Johannes Müller,P. Polakowski,S. Flachowsky	25
6	Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells 2015 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Halid Mulaosmanovic,Stefan Slesazeck,J. Ocker,(unknown),Stefan Müller,S. Flachowsky,Johannes Müller,P. Polakowski,Paul Jarman,Sören Jansen,Sabine Kolodinski,Claudia Richter,(unknown),Tony Schenk,Alfred Kersch,Christopher Künneth,Ralf van Bentum,U. Schröder,Thomas Mikolajick	115
7	(Invited) Integration Challenges of Ferroelectric Hafnium Oxide Based Embedded Memory 2015 ·ECS Transactions ·Johannes Müller,P. Polakowski,Jan Paul,S. Riedel,Raik Hoffmann,Maximilian Drescher,Stefan Slesazeck,Stefan Müller,Halid Mulaosmanovic,U. Schröder,Thomas Mikolajick,S. Flachowsky,Elke Erben,Elliot J. Smith,Róbert Binder,Dina H. Triyoso,(unknown),Sabine Kolodinski	23
8	Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors 2014 ·Advances in science and technology ·Thomas Mikolajick,Stefan Müller,Tony Schenk,Ekaterina Yurchuk,Stefan Slesazeck,U. Schröder,S. Flachowsky,Ralf van Bentum,Sabine Kolodinski,P. Polakowski,Johannes Müller	60
9	Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks 2013 ·Solid-State Electronics ·S. Flachowsky,T. Herrmann,J. Höntschel,(unknown),(unknown),Maciej Wiatr	1
10	Strained isolation oxide as novel overall stress element for Tri-Gate transistors of 22nm CMOS and beyond 2012 ·Tim Baldauf,(unknown),(unknown),A. Wei,(unknown),S. Flachowsky,T. Herrmann,Jan Hoentschel,Μ. Horstmann	3
11	Mechanism of Stress Memorization Technique (SMT) and Method to Maximize Its Effect 2011 ·IEEE Electron Device Letters ·(unknown),(unknown),(unknown),S. Flachowsky,T. Herrmann,(unknown),F. Bénistant,A. See,(unknown),(unknown)	10
12	Study of 22/20nm Tri-Gate transistors compatible in a low-cost hybrid FinFET/planar CMOS process 2011 ·Tim Baldauf,A. Wei,(unknown),S. Flachowsky,T. Herrmann,J. Höntschel,Μ. Horstmann,(unknown),(unknown)	2
13	Suppression of the corner effects in a 22 nm hybrid Tri-Gate/planar process 2011 ·Tim Baldauf,A. Wei,T. Herrmann,S. Flachowsky,(unknown),J. Höntschel,Μ. Horstmann,(unknown),(unknown)	4
14	Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET 2010 ·IEEE Transactions on Electron Devices ·S. Flachowsky,(unknown),(unknown),T. Herrmann,J. Höntschel,Μ. Horstmann,(unknown),(unknown)	53
15	Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors 2010 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·S. Flachowsky,(unknown),T. Herrmann,(unknown),(unknown),(unknown),Andreas Naumann,(unknown),J. Höntschel,Μ. Horstmann	8
16	Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing 2010 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·(unknown),S. Flachowsky,T. Herrmann,(unknown),(unknown),Thomas Feudel,J. Höntschel,Μ. Horstmann	3
17	A comparative study of non-melt laser spike annealing and flash lamp annealing in terms of transistor performance and pattern effects on SOI-CMOSFETs for the 32 nm node and below 2009 ·(unknown),S. Flachowsky,T. Herrmann,(unknown),(unknown),(unknown),(unknown),Μ. Horstmann,(unknown)	2
18	SiGe channels for higher mobility CMOS devices 2009 ·MRS Proceedings ·Andreas Naumann,(unknown),Martin Trentzsch,(unknown),(unknown),S. Flachowsky,T. Herrmann,(unknown),Johann W. Bartha	1
19	Optimization of ClusterCarbon™ process parameters for strained Si lattice 2008 ·Materials Science and Engineering B ·Karuppanan Sekar,W. Krull,(unknown),Thomas Feudel,Christian Krüger,S. Flachowsky,(unknown)	1
20	Gate length scaling trends of drive current enhancement in CMOSFETs with dual stress overlayers and embedded-SiGe 2008 ·Materials Science and Engineering B ·S. Flachowsky,A. Wei,T. Herrmann,(unknown),Μ. Horstmann,Ralf P. Richter,(unknown),(unknown),(unknown)	5

About S. Flachowsky

S. Flachowsky is a scholar working on Electrical and Electronic Engineering, Ceramics and Composites and Materials Chemistry, having authored 24 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.0k citations), Materials Chemistry (493 citations) and Structural Biology (6 citations). S. Flachowsky has collaborated with scholars based in Germany, United States and Italy. Frequent co-authors include Stefan Slesazeck, Johannes Müller, P. Polakowski, Thomas Mikolajick, Stefan Müller, Halid Mulaosmanovic, J. Ocker, Ralf van Bentum, Uwe Schroeder and Martin Trentzsch. Their work appears in journals such as ACS Applied Materials & Interfaces, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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