W.E. Combs

1.8k total citations
24 papers, 1.4k citations indexed

About

W.E. Combs is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Pulmonary and Respiratory Medicine. According to data from OpenAlex, W.E. Combs has authored 24 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 3 papers in Materials Chemistry and 1 paper in Pulmonary and Respiratory Medicine. Recurrent topics in W.E. Combs's work include Semiconductor materials and devices (20 papers), Radiation Effects in Electronics (17 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). W.E. Combs is often cited by papers focused on Semiconductor materials and devices (20 papers), Radiation Effects in Electronics (17 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). W.E. Combs collaborates with scholars based in United States. W.E. Combs's co-authors include Ronald D. Schrimpf, R.L. Pease, R.N. Nowlin, Daniel M. Fleetwood, E.W. Enlow, S.L. Kosier, M. DeLaus, A. Wei, D. Schmidt and R.A. Reber and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Transactions on Nuclear Science.

In The Last Decade

W.E. Combs

23 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W.E. Combs United States 14 1.4k 93 75 55 34 24 1.4k
R.N. Nowlin United States 9 1.0k 0.7× 71 0.8× 55 0.7× 40 0.7× 35 1.0× 13 1.0k
D.C. Mayer United States 14 859 0.6× 50 0.5× 145 1.9× 46 0.8× 33 1.0× 41 884
James A. Felix United States 7 806 0.6× 85 0.9× 87 1.2× 31 0.6× 23 0.7× 14 838
Antoine Touboul France 14 597 0.4× 68 0.7× 106 1.4× 22 0.4× 41 1.2× 66 643
E.W. Enlow United States 7 544 0.4× 38 0.4× 40 0.5× 24 0.4× 17 0.5× 12 560
C.F. Wheatley United States 19 1.0k 0.7× 23 0.2× 96 1.3× 17 0.3× 10 0.3× 45 1.0k
M. Gehlhausen United States 9 460 0.3× 34 0.4× 34 0.5× 36 0.7× 13 0.4× 11 479
Pascale Gouker United States 12 622 0.4× 22 0.2× 220 2.9× 21 0.4× 20 0.6× 38 648
Phil Oldiges United States 14 856 0.6× 53 0.6× 116 1.5× 45 0.8× 46 1.4× 40 879
T. F. Wrobel United States 11 466 0.3× 73 0.8× 68 0.9× 13 0.2× 36 1.1× 26 539

Countries citing papers authored by W.E. Combs

Since Specialization
Citations

This map shows the geographic impact of W.E. Combs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.E. Combs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.E. Combs more than expected).

Fields of papers citing papers by W.E. Combs

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.E. Combs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.E. Combs. The network helps show where W.E. Combs may publish in the future.

Co-authorship network of co-authors of W.E. Combs

This figure shows the co-authorship network connecting the top 25 collaborators of W.E. Combs. A scholar is included among the top collaborators of W.E. Combs based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W.E. Combs. W.E. Combs is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Combs, W.E., et al.. (2005). Radiation effects on the AT&T CBIC linear bipolar process. 110–117. 1 indexed citations
3.
Pease, R.L., W.E. Combs, A.H. Johnston, et al.. (2002). A compendium of recent total dose data on bipolar linear microcircuits. 28–37. 24 indexed citations
4.
Nowlin, R.N., Ronald D. Schrimpf, E.W. Enlow, W.E. Combs, & R.L. Pease. (2002). Mechanisms of ionizing-radiation-induced degradation in modern bipolar devices. 174–177. 7 indexed citations
5.
Wei, A., S.L. Kosier, Ronald D. Schrimpf, W.E. Combs, & M. DeLaus. (2002). Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJTs. 201–204. 3 indexed citations
6.
Titus, J.L., W.E. Combs, T.L. Turflinger, et al.. (1998). First observations of enhanced low dose rate sensitivity (ELDRS) in space: One part of the MPTB experiment. IEEE Transactions on Nuclear Science. 45(6). 2673–2680. 18 indexed citations
7.
Witczak, S.C., Ronald D. Schrimpf, K.F. Galloway, et al.. (1996). Gain degradation of lateral and substrate pnp bipolar junction transistors. IEEE Transactions on Nuclear Science. 43(6). 3151–3160. 51 indexed citations
8.
Schmidt, D., et al.. (1996). Mechanisms of ionizing-radiation-induced gain degradation in lateral PNP BJTs. University of North Texas Digital Library (University of North Texas). 1 indexed citations
9.
Schmidt, D., Daniel M. Fleetwood, Ronald D. Schrimpf, et al.. (1995). Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs. IEEE Transactions on Nuclear Science. 42(6). 1541–1549. 93 indexed citations
10.
Kosier, S.L., A. Wei, Ronald D. Schrimpf, et al.. (1995). Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs. IEEE Transactions on Electron Devices. 42(3). 436–444. 96 indexed citations
11.
Wei, A., S.L. Kosier, Ronald D. Schrimpf, W.E. Combs, & M. DeLaus. (1995). Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT's. IEEE Transactions on Electron Devices. 42(5). 923–927. 32 indexed citations
12.
Pease, R.L., S.L. Kosier, Ronald D. Schrimpf, et al.. (1994). Comparison of hot-carrier and radiation induced increases in base current in bipolar transistors. IEEE Transactions on Nuclear Science. 41(6). 2567–2573. 6 indexed citations
13.
Fleetwood, Daniel M., S.L. Kosier, R.N. Nowlin, et al.. (1994). Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates. IEEE Transactions on Nuclear Science. 41(6). 1871–1883. 228 indexed citations
14.
Wei, A., S.L. Kosier, Ronald D. Schrimpf, Daniel M. Fleetwood, & W.E. Combs. (1994). Dose-rate effects on radiation-induced bipolar junction transistor gain degradation. Applied Physics Letters. 65(15). 1918–1920. 42 indexed citations
15.
Kosier, S.L., W.E. Combs, A. Wei, et al.. (1994). Bounding the total-dose response of modern bipolar transistors. IEEE Transactions on Nuclear Science. 41(6). 1864–1870. 69 indexed citations
16.
Nowlin, R.N., S.L. Kosier, Ronald D. Schrimpf, W.E. Combs, & Daniel M. Fleetwood. (1993). Charge separation in bipolar transistors. 19–23. 3 indexed citations
17.
Pease, R.L., et al.. (1992). Long term ionization response of several BiCMOS VLSIC technologies. IEEE Transactions on Nuclear Science. 39(3). 352–356. 10 indexed citations
18.
Nowlin, R.N., E.W. Enlow, Ronald D. Schrimpf, & W.E. Combs. (1992). Trends in the total-dose response of modern bipolar transistors. IEEE Transactions on Nuclear Science. 39(6). 2026–2035. 155 indexed citations
19.
Enlow, E.W., R.L. Pease, W.E. Combs, Ronald D. Schrimpf, & R.N. Nowlin. (1991). Response of advanced bipolar processes to ionizing radiation. IEEE Transactions on Nuclear Science. 38(6). 1342–1351. 257 indexed citations
20.
Enlow, E.W., R.L. Pease, W.E. Combs, & D Platteter. (1989). Total dose induced hole trapping in trench oxides. IEEE Transactions on Nuclear Science. 36(6). 2415–2422. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by R.N. Nowlin Breakdown of academic impact, for papers by D.C. Mayer Breakdown of academic impact, for papers by James A. Felix Breakdown of academic impact, for papers by Antoine Touboul Breakdown of academic impact, for papers by E.W. Enlow Breakdown of academic impact, for papers by C.F. Wheatley Breakdown of academic impact, for papers by M. Gehlhausen Breakdown of academic impact, for papers by Pascale Gouker Breakdown of academic impact, for papers by Phil Oldiges Breakdown of academic impact, for papers by T. F. Wrobel
Rankless by CCL
2026