J. Yugami

652 citations

64 papers · 487 indexed · h-index 13

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Silicon Carbide Semiconductor Technologies
Computer Networks and Communications
- Advanced Data Storage Technologies

Papers in

Electrical and Electronic Engineering 63
- Semiconductor materials and devices 56
- Advancements in Semiconductor Devices and Circuit Design 38
- Integrated Circuits and Semiconductor Failure Analysis 26
- Ferroelectric and Negative Capacitance Devices 8
- Advanced Memory and Neural Computing 7
- Silicon and Solar Cell Technologies 5
Structural Biology 1

Co-authors: Shigeo Tsujikawa Haruki Kume R. Yamada Toshiyuki Mine Ryuta Tsuchiya T. OnaiKenji WatanabeY. Shimamoto
Journals: Japanese Journal of Applied Physics (10 papers)IEEE Transactions on Electron Devices (2 papers)Applied Physics Letters (1 paper)IEEE Journal of Solid-State Circuits (1 paper)Superlattices and Microstructures (1 paper)
Partner nations: Japan United States United Kingdom

In The Last Decade

J. Yugami

55 papers receiving 462 citations

Peers

Countries citing papers authored by J. Yugami

Since Specialization

Citations

This map shows the geographic impact of J. Yugami's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Yugami with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Yugami more than expected).

Fields of papers citing papers by J. Yugami

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Yugami. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Yugami. The network helps show where J. Yugami may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Yugami, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Yugami Line = papers co-authored together J. Yugami links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region Partrick C. Ryan, Motoyuki Sato, Takeo Matsuki, Tetsuya Suzuki, Kenji Shiraishi, Akira Uedono, Seiichi Miyazaki, Kenji Ohmori, K. Yamada, Toshihide Nabatame, Toyohiro Chikyow, J. Yugami, Koichi Ikeda, 史朗新妻	2010	2
2	Transformation of Crystalline Structure of HfO₂ by La- or Y-Oxide Capping and Annealing ECS Transactions ·Takayuki Suzuki, Takeo Matsuki, Christian Mario Oblitas, Motoyuki Sato, J. Yugami, Kazuto Ikeda, Yuzuru Ohji	2010	1
3	Effect of Post Cap-Layer Deposition Annealing Temperature and TiN Thickness on SMDH CMOS Process using TiN Hard Mask Hisanori Shinohara, P. B. M. Berensten, Adashov Hojiboy Husan o'g'li, Masaki Hayashi, Edmund Green, Y. Sugita, Takeo Matsuki, T. Eimori, J. Yugami, Sayoko Ishii, Yuzuru Ohji	2009	1
4	V_ox/E_ox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress Japanese Journal of Applied Physics ·郭震, NWOGO MADUKA CHINELO, Hiroshi Umeda, J. Yugami	2007	3
5	High Performance Gate-First pMISFET with TiN/HfSiON Gate Stacks Fabricated with PVD-Based In-Situ Method ECS Transactions ·Takaaki Kawahara, 建設省住宅局民間住宅課建設経済局不動産業課, 有珠金, J. Yugami, 藤澤公也, T. Minami, Jürgen Walpert, Binglin Liang, Hiroaki Arimura, Takayoshi Shimura, Heiji Watanabe	2007	0
6	Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method Japanese Journal of Applied Physics ·藤澤公也, Binglin Liang, Hiroaki Arimura, Takaaki Kawahara, 有珠金, 建設省住宅局民間住宅課建設経済局不動産業課, J. Yugami, T. Minami, Jürgen Walpert, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe	2007	1
7	SiN Gate Dielectric with Oxygen-enriched Interface (OI-SiN) Utilizing Dual-core-SiON Technique for hp65-SoC LOP Application 郭震, Hiroshi Umeda, Takashi Hayashi, Aylin İşcan, NWOGO MADUKA CHINELO, И.В. Матюшкин, J. Yugami, Jianwei Zhang, Masahiro Yoneda	2006	1
8	Fluorine incorporation into HfSiON dielectric for V/sub th/ control and its impact on reliability for poly-Si gate pFET Masashi Inoue, Shigeo Tsujikawa, Masami Mizutani, L. Liu, Takafumi Hayashi, NWOGO MADUKA CHINELO, J. Yugami, И. А. Геллер, Evans De La Barra, Masahiro Yoneda	2006	18
9	Impact of SiON on embedded nonvolatile MNOS memory Inne Wardhani, Masoumeh Mehni, Mariano Ricardes, Toshiyuki Mine, K. Watanabe, J. Yugami, Haruki Kume, Fuminori Ito, Yoshiyuki Kawashima, Takeshi Sakai, Lalitha M. Chittari, Odontologia Pediátrica, Masayuki Mizuno, Shiro Kamohara, M. Svinuhova, Kikuo Okuyama, K. Kuroda, K. Kubota	2005	1
10	V/sub ox/E/sub ox/-driven breakdown of ultra-thin SiON gate dielectric in p+gate-pMOSFET under low stress voltage of inversion mode Shigeo Tsujikawa, NWOGO MADUKA CHINELO, Hiroshi Umeda, M S Voronchuk, J. Yugami, Evans De La Barra, Masahiro Yoneda	2005	4
11	Accurate Evaluation of Mobility in High Gate-Leakage-Current MOSFETs by Using a Transmission-Line Model IEEE Transactions on Electron Devices ·Osamu Tonomura, Y. Shimamoto, Hiroshi Miki, Shinichi Saito, Kazuyoshi Torii, Masahiko Hiratani, J. Yugami	2004	2
12	Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics Applied Physics Letters ·Shinichi Saito, Kazuyoshi Torii, Yasuhiro Shimamoto, 郭震, Hirotaka Hamamura, Osamu Tonomura, Toshiyuki Mine, Digh Hisamoto, T. Onai, J. Yugami, Masahiko Hiratani, Shin’ichiro Kimura	2004	35
13	Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics Microelectronics Reliability ·郭震, J. Yugami	2004	22
14	Advanced oxynitride gate dielectrics for CMOS applications J. Yugami, Shigeo Tsujikawa, Ryuta Tsuchiya, Shinichi Saito, Y. Shimamoto, Kazuyoshi Torii, Toshiyuki Mine, T. Onai	2003	2
15	Edge effect prediction in real MOS insulator using test chips J. Yugami, Atsushi Hiraiwa	2002	1
16	A new SSS-OSELO technology for 0.15-μm low-defect isolation Bérangère Durand, T. Kaga, J. Yugami, T. Kure	2002	0
17	Charging and Intrinsic-leakage Current Peaks in Thin Silicon-dioxide Films Renichi Yamada, J. Yugami, M. Ohkura	1997	4
18	Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories IEEE Journal of Solid-State Circuits ·T. Kawahara, Takashi Kobayashi, Dwia Aries Tina Pulubuhu, Shuji Saeki, Naoki Miyamoto, Mohammed Ghesmoune, Masataka Kato, Akira Sato, J. Yugami, Haruki Kume, K. Kimura	1996	26
19	Capacitance-Enhanced Stacked-Capacitor with Engraved Storage Electrode for Deep Submicron DRAMs Toshiyuki Mine, Kh. Kh. Yakubov, J. Yugami, Gerald Lowe, T. Morimoto	1989	7
20	Inter-Poly SiO2/Si3N4 Capacitor Films 5nm Thick for Deep Submicron LSIs J. Yugami, Toshiyuki Mine, Bui Thi Thom, Atsushi Hiraiwa	1988	9

About J. Yugami

J. Yugami is a scholar working on Electrical and Electronic Engineering, Structural Biology, Surfaces, Coatings and Films, Ceramics and Composites and Mechanics of Materials, having authored 64 papers that have together received 487 indexed citations. Recurring topics across this work include Semiconductor materials and devices (56 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers), Integrated Circuits and Semiconductor Failure Analysis (26 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Advanced Memory and Neural Computing (7 papers), Silicon and Solar Cell Technologies (5 papers), Semiconductor materials and interfaces (4 papers) and Metal and Thin Film Mechanics (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (452 citations), Computer Networks and Communications (48 citations), Atomic and Molecular Physics, and Optics (56 citations), Materials Chemistry (72 citations) and Electronic, Optical and Magnetic Materials (28 citations). J. Yugami has collaborated with scholars based in Japan, United States and United Kingdom. Frequent co-authors include Shigeo Tsujikawa, Haruki Kume, R. Yamada, Toshiyuki Mine, Ryuta Tsuchiya, T. Onai, Kenji Watanabe, Y. Shimamoto, Tetsuya NISHIMOTO and Yuki Mori. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Journal of Solid-State Circuits and Superlattices and Microstructures.

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