R.N. Nowlin

1.3k total citations
13 papers, 1.0k citations indexed

About

R.N. Nowlin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Infectious Diseases. According to data from OpenAlex, R.N. Nowlin has authored 13 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 1 paper in Atomic and Molecular Physics, and Optics and 0 papers in Infectious Diseases. Recurrent topics in R.N. Nowlin's work include Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Radiation Effects in Electronics (7 papers). R.N. Nowlin is often cited by papers focused on Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Radiation Effects in Electronics (7 papers). R.N. Nowlin collaborates with scholars based in United States. R.N. Nowlin's co-authors include Ronald D. Schrimpf, W.E. Combs, R.L. Pease, E.W. Enlow, Daniel M. Fleetwood, S.L. Kosier, A. Wei, M. DeLaus, P.S. Winokur and R.A. Reber and has published in prestigious journals such as IEEE Transactions on Nuclear Science, Plasma Chemistry and Plasma Processing and UA Campus Repository (The University of Arizona).

In The Last Decade

R.N. Nowlin

13 papers receiving 943 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R.N. Nowlin United States 9 1.0k 71 55 40 35 13 1.0k
W.E. Combs United States 14 1.4k 1.4× 93 1.3× 75 1.4× 55 1.4× 34 1.0× 24 1.4k
Antoine Touboul France 14 597 0.6× 68 1.0× 106 1.9× 22 0.6× 41 1.2× 66 643
T. F. Wrobel United States 11 466 0.5× 73 1.0× 68 1.2× 13 0.3× 36 1.0× 26 539
Ashok Raman United States 15 679 0.7× 49 0.7× 61 1.1× 10 0.3× 40 1.1× 42 721
Zhangang Zhang China 13 415 0.4× 61 0.9× 54 1.0× 18 0.5× 25 0.7× 85 496
Scot E. Swanson United States 12 367 0.4× 26 0.4× 24 0.4× 27 0.7× 61 1.7× 29 392
L. Tosti France 15 773 0.8× 62 0.9× 95 1.7× 3 0.1× 60 1.7× 32 805
Donald B. King United States 8 238 0.2× 43 0.6× 3 0.1× 36 0.9× 32 0.9× 30 311
A. Sanseverino Italy 15 589 0.6× 23 0.3× 6 0.1× 3 0.1× 59 1.7× 56 610
F. Frisina Italy 13 416 0.4× 39 0.5× 2 0.0× 4 0.1× 55 1.6× 37 444

Countries citing papers authored by R.N. Nowlin

Since Specialization
Citations

This map shows the geographic impact of R.N. Nowlin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.N. Nowlin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.N. Nowlin more than expected).

Fields of papers citing papers by R.N. Nowlin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.N. Nowlin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.N. Nowlin. The network helps show where R.N. Nowlin may publish in the future.

Co-authorship network of co-authors of R.N. Nowlin

This figure shows the co-authorship network connecting the top 25 collaborators of R.N. Nowlin. A scholar is included among the top collaborators of R.N. Nowlin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.N. Nowlin. R.N. Nowlin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Nowlin, R.N., et al.. (2005). Evaluating TM1019.6 ELDRS screening methods using gated lateral PNP transistors. IEEE Transactions on Nuclear Science. 52(6). 2609–2615. 10 indexed citations
2.
Pease, R.L., D Platteter, G.W. Dunham, et al.. (2004). Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures. IEEE Transactions on Nuclear Science. 51(6). 3773–3780. 69 indexed citations
3.
Nowlin, R.N., Ronald D. Schrimpf, E.W. Enlow, W.E. Combs, & R.L. Pease. (2002). Mechanisms of ionizing-radiation-induced degradation in modern bipolar devices. 174–177. 7 indexed citations
4.
Carlile, Robert N., et al.. (1995). Spectroscopic diagnostics of temperature-controlled trench etching of silicon. Plasma Chemistry and Plasma Processing. 15(2). 231–255. 10 indexed citations
5.
Fleetwood, Daniel M., S.L. Kosier, R.N. Nowlin, et al.. (1994). Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates. IEEE Transactions on Nuclear Science. 41(6). 1871–1883. 228 indexed citations
6.
Nowlin, R.N., Daniel M. Fleetwood, & Ronald D. Schrimpf. (1994). Saturation of the dose-rate response of bipolar transistors below 10 rad(SiO/sub 2/)/s: implications for hardness assurance. IEEE Transactions on Nuclear Science. 41(6). 2637–2641. 41 indexed citations
7.
Nowlin, R.N.. (1993). Total-dose gain degradation in modern bipolar transistors.. UA Campus Repository (The University of Arizona). 3 indexed citations
8.
Nowlin, R.N., S.L. Kosier, Ronald D. Schrimpf, W.E. Combs, & Daniel M. Fleetwood. (1993). Charge separation in bipolar transistors. 19–23. 3 indexed citations
9.
Kosier, S.L., Ronald D. Schrimpf, R.N. Nowlin, et al.. (1993). Charge separation for bipolar transistors. IEEE Transactions on Nuclear Science. 40(6). 1276–1285. 167 indexed citations
10.
Nowlin, R.N., Daniel M. Fleetwood, Ronald D. Schrimpf, R.L. Pease, & W.E. Combs. (1993). Hardness-assurance and testing issues for bipolar/BiCMOS devices. IEEE Transactions on Nuclear Science. 40(6). 1686–1693. 84 indexed citations
11.
Nowlin, R.N., E.W. Enlow, Ronald D. Schrimpf, & W.E. Combs. (1992). Trends in the total-dose response of modern bipolar transistors. IEEE Transactions on Nuclear Science. 39(6). 2026–2035. 155 indexed citations
12.
Enlow, E.W., R.L. Pease, W.E. Combs, Ronald D. Schrimpf, & R.N. Nowlin. (1991). Response of advanced bipolar processes to ionizing radiation. IEEE Transactions on Nuclear Science. 38(6). 1342–1351. 257 indexed citations
13.
Carlile, Robert N., et al.. (1990). Spectroscopic diagnostics of temperature-controlled trench etching of silicon. Plasma Chemistry and Plasma Processing. 10(2). 231–246. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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