Min‐Cheng Chen

1.1k citations

34 papers · 850 · h-index 14

Impact in

Electrical and Electronic Engineering top 5%
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
Materials Chemistry
- MXene and MAX Phase Materials
- 2D Materials and Applications
- Ferroelectric and Piezoelectric Materials

Papers in

Electrical and Electronic Engineering 33
- Semiconductor materials and devices 23
- Ferroelectric and Negative Capacitance Devices 18
- Advancements in Semiconductor Devices and Circuit Design 16
- Advanced Memory and Neural Computing 9
Biomedical Engineering 10
- Nanowire Synthesis and Applications 10

Co-authors: Chenming Hu (11 shared papers)Angada B. Sachid (3 shared papers)Kai‐Shin Li (8 shared papers)Wen‐Kuan Yeh (6 shared papers)Chang-Hsien Lin (9 shared papers)Fu-Liang Yang (14 shared papers)Chun‐Chi Chen (3 shared papers)Yun-Fang Hou (7 shared papers)
Journals: IEEE Electron Device Letters (5 papers)IEEE Transactions on Electron Devices (3 papers)Japanese Journal of Applied Physics (2 papers)Semiconductor Science and Technology (1 paper)Applied Physics Letters (1 paper)
Partner nations: Taiwan United States Saudi Arabia

In The Last Decade

Min‐Cheng Chen

31 papers receiving 830 citations

Peers

Countries citing papers authored by Min‐Cheng Chen

Since Specialization

Citations

This map shows the geographic impact of Min‐Cheng Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Min‐Cheng Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Min‐Cheng Chen more than expected).

Fields of papers citing papers by Min‐Cheng Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Min‐Cheng Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Min‐Cheng Chen. The network helps show where Min‐Cheng Chen may publish in the future.

Co-authors

The 25 scholars most cited alongside Min‐Cheng Chen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Min‐Cheng Chen Line = papers co-authored together Min‐Cheng Chen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 34 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Sub-60mV-swing negative-capacitance FinFET without hysteresis Kai‐Shin Li, Pin-Guang Chen, Tung-Yan Lai, Chang-Hsien Lin, Cheng-Chih Cheng, Chun‐Chi Chen, Yun-Jie Wei, Yun-Fang Hou, Ming-Han Liao, M. H. Lee, Min‐Cheng Chen, Jia-Min Sheih, Wen‐Kuan Yeh, Fu-Liang Yang, Sayeef Salahuddin, Chenming Hu	2015	252
2	Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition Haitong Li, Tony F. Wu, Abbas Rahimi, Kai‐Shin Li, Miles Rusch, Chang-Hsien Lin, Juo-Luen Hsu, Mohamed M. Sabry, Sukru Burc Eryilmaz, Joon Sohn, Wen‐Cheng Chiu, Min‐Cheng Chen, Tsung‐Ta Wu, Jia‐Min Shieh, Wen‐Kuan Yeh, Jan M. Rabaey, Subhasish Mitra, H.‐S. Philip Wong	2016	110
3	FinFET With High-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math> </inline-formula> Spacers for Improved Drive Current IEEE Electron Device Letters ·Angada B. Sachid, Min‐Cheng Chen, Chenming Hu	2016	59
4	Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing Haitong Li, Kai‐Shin Li, Chang-Hsien Lin, Juo-Luen Hsu, Wen‐Cheng Chiu, Min‐Cheng Chen, Tsung‐Ta Wu, Joon Sohn, Sukru Burc Eryilmaz, Jia‐Min Shieh, Wen‐Kuan Yeh, H.‐S. Philip Wong	2016	58
5	Bulk FinFET With Low- $\kappa $ Spacers for Continued Scaling IEEE Transactions on Electron Devices ·Angada B. Sachid, Min‐Cheng Chen, Chenming Hu	2017	45
6	FinFET With Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits IEEE Electron Device Letters ·Angada B. Sachid, Yao-Min Huang, Yi‐Ju Chen, Chun‐Chi Chen, Darsen D. Lu, Min‐Cheng Chen, Chenming Hu	2016	42
7	Utilizing Sub-5 nm sidewall electrode technology for atomic-scale resistive memory fabrication Kai‐Shin Li, ChiaHua Ho, Ming‐Taou Lee, Min‐Cheng Chen, Cho-Lun Hsu, Jian-Ming Lü, Chia‐Hua Lin, C. C. Chen, Biao Wu, Yun-Fang Hou, Chun‐Hao Lin, Y. J. Chen, Tung‐Yen Lai, M. Y. Li, Inchul Yang, Chonggang Wu, Fu-Liang Yang	2014	34
8	A device design of an integrated CMOS poly-silicon biosensor-on-chip to enhance performance of biomolecular analytes in serum samples Biosensors and Bioelectronics ·Pei-Wen Yen, Che-Wei Huang, Huang Yujie, Min‐Cheng Chen, Hsin-Hao Liao, Shey‐Shi Lu, Lin Chih-Ting	2014	29
9	Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A Review IEEE Journal of the Electron Devices Society ·Yao‐Jen Lee, Guang-Li Luo, Fu-Ju Hou, Min‐Cheng Chen, Chih-Chao Yang, Chang‐Hong Shen, Wen-Fa Wu, Jia‐Min Shieh, Wen‐Kuan Yeh	2016	26
10	High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 Applied Physics Letters ·T. D. Lin, Wen-Hsin Chang, R. L. Chu, Y. C. Chang, Y. H. Chang, M. Y. Lee, Panuk Hong, Min‐Cheng Chen, J. Kwo, M. Hong	2013	25
11	One-transistor ferroelectric versatile memory: Strained-gate engineering for realizing energy-efficient switching and fast negative-capacitance operation Yu‐Chien Chiu, Chun‐Hu Cheng, Chun-Yen Chang, Ying–Tsan Tang, Min‐Cheng Chen	2016	21
12	MoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology) ·Kai‐Shin Li, Bowei Wu, Lain‐Jong Li, Ming‐Yang Li, Chia-Chin Cheng, Cho-Lun Hsu, Chang-Hsien Lin, Yi‐Ju Chen, Chun-Chi Chen, Chien-Ting Wu, Min‐Cheng Chen, Jia‐Min Shieh, Wen-Kuan Yeh, Yu‐Lun Chueh, Fu-Liang Yang, Chenming Hu	2016	20
13	Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology) ·Min‐Cheng Chen, C. L. Lin, K.-S. Li, Lain‐Jong Li, Chang‐Hsiao Chen, Cheng‐Hao Chuang, M. C. Lee, Y.C. Chen, Yun-Fang Hou, Chang-Hsien Lin, Chun‐Chi Chen, Bowei Wu, Cheng-San Wu, Ivy Yang, Yao‐Jen Lee, Wen-Kuan Yeh, Tahui Wang, Fu-Liang Yang, Chenming Hu	2014	19
14	Threshold Vacuum Switch (TVS) on 3D-stackable and 4F<sup>2</sup> cross-point bipolar and unipolar resistive random access memory ChiaHua Ho, Hsin-Hau Huang, Ming‐Taou Lee, Cho-Lun Hsu, Tung‐Yen Lai, Wen‐Cheng Chiu, Mei-Yi Lee, Tong-Huan Chou, Ivy Yang, Min‐Cheng Chen, Cheng-San Wu, Kuang-Hao Chiang, Yong-Der Yao, Chenming Hu, Fu-Liang Yang	2012	14
15	Enabling low power BEOL compatible monolithic 3D+ nanoelectronics for IoTs using local and selective far-infrared ray laser anneal technology Chih-Chao Yang, Jia‐Min Shieh, Tung-Ying Hsieh, Wen-Hsien Huang, Hsing-Hsiang Wang, Chang‐Hong Shen, Tsung‐Ta Wu, Yun-Fang Hou, Yi‐Ju Chen, Yao‐Jen Lee, Min‐Cheng Chen, Fu-Liang Yang, Yu‐Hsiu Chen, Meng‐Chyi Wu, Wen‐Kuan Yeh	2015	12
16	Study of sub-5 nm RRAM, tunneling selector and selector less device Kai‐Shin Li, Ming‐Taou Lee, Min‐Cheng Chen, Cho-Lun Hsu, Jian-Ming Lü, Chia‐Hua Lin, C. C. Chen, Biao Wu, Yun-Fang Hou, Chun‐Hao Lin, Y. J. Chen, Tung‐Yen Lai, M. Y. Li, Inchul Yang, Chonggang Wu, Fu-Liang Yang, W.-K. Yeh	2015	11
17	Statistical Characterization and Modeling of the Temporal Evolutions of $\Delta V_{\rm t}$ Distribution in NBTI Recovery in Nanometer MOSFETs IEEE Transactions on Electron Devices ·Jung-Piao Chiu, Yuheng Liu, Hung-Da Hsieh, Chi-Wei Li, Min‐Cheng Chen, Tahui Wang	2013	11
18	SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory IEEE Transactions on Electron Devices ·Yueh-Ting Chung, Po-Cheng Su, Wen‐Jie Lin, Min‐Cheng Chen, Tahui Wang	2016	10
19	A fully integrated hepatitis B virus DNA detection SoC based on monolithic polysilicon nanowire CMOS process Che-Wei Huang, Yu-Jie Huang, Pei-Wen Yen, Hsiao-Ting Hsueh, Chia‐Yi Lin, Min‐Cheng Chen, ChiaHua Ho, Fu-Liang Yang, Hann-Huei Tsai, Hsin-Hao Liao, Ying‐Zong Juang, Chorng‐Kuang Wang, Chih‐Ting Lin, Shey‐Shi Lu	2012	8
20	A Comparative Study of NBTI and RTN Amplitude Distributions in High- $\kappa$ Gate Dielectric pMOSFETs IEEE Electron Device Letters ·J.P. Chiu, Yueh-Ting Chung, Tahui Wang, Min‐Cheng Chen, Chin‐Wei Lu, K.F. Yu	2011	7

About Min‐Cheng Chen

Min‐Cheng Chen is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Materials Chemistry, Bioengineering and Condensed Matter Physics, having authored 34 papers that have together received 850 indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), Ferroelectric and Negative Capacitance Devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Nanowire Synthesis and Applications (10 papers), Advanced Memory and Neural Computing (9 papers), 2D Materials and Applications (3 papers), Analytical Chemistry and Sensors (3 papers) and Ferroelectric and Piezoelectric Materials (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (805 citations), Materials Chemistry (258 citations), Bioengineering (25 citations), Cellular and Molecular Neuroscience (45 citations) and Biomedical Engineering (99 citations). Min‐Cheng Chen has collaborated with scholars based in Taiwan, United States and Saudi Arabia. Frequent co-authors include Chenming Hu, Angada B. Sachid, Kai‐Shin Li, Wen‐Kuan Yeh, Chang-Hsien Lin, Fu-Liang Yang, Chun‐Chi Chen, Yun-Fang Hou, Jia‐Min Shieh and M. H. Lee. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics, Semiconductor Science and Technology and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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