Min‐Cheng Chen

1.1k total citations
34 papers, 850 citations indexed

About

Min‐Cheng Chen is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Min‐Cheng Chen has authored 34 papers receiving a total of 850 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 10 papers in Biomedical Engineering and 9 papers in Materials Chemistry. Recurrent topics in Min‐Cheng Chen's work include Semiconductor materials and devices (23 papers), Ferroelectric and Negative Capacitance Devices (18 papers) and Advancements in Semiconductor Devices and Circuit Design (16 papers). Min‐Cheng Chen is often cited by papers focused on Semiconductor materials and devices (23 papers), Ferroelectric and Negative Capacitance Devices (18 papers) and Advancements in Semiconductor Devices and Circuit Design (16 papers). Min‐Cheng Chen collaborates with scholars based in Taiwan, United States and Saudi Arabia. Min‐Cheng Chen's co-authors include Chenming Hu, Angada B. Sachid, Kai‐Shin Li, Wen‐Kuan Yeh, Chang-Hsien Lin, Fu-Liang Yang, Chun‐Chi Chen, Yun-Fang Hou, Jia‐Min Shieh and Ming-Han Liao and has published in prestigious journals such as Applied Physics Letters, Biosensors and Bioelectronics and IEEE Transactions on Electron Devices.

In The Last Decade

Min‐Cheng Chen

31 papers receiving 830 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Min‐Cheng Chen Taiwan 14 805 258 99 46 45 34 850
Xiaohe Huang China 12 450 0.6× 340 1.3× 83 0.8× 41 0.9× 60 1.3× 22 614
Shosuke Fujii Japan 15 706 0.9× 238 0.9× 55 0.6× 48 1.0× 51 1.1× 53 748
Zheng Chai United Kingdom 15 417 0.5× 190 0.7× 64 0.6× 62 1.3× 55 1.2× 39 547
Bong Ho Kim South Korea 12 437 0.5× 259 1.0× 85 0.9× 30 0.7× 16 0.4× 70 589
Minseong Park United States 12 368 0.5× 212 0.8× 116 1.2× 79 1.7× 75 1.7× 29 575
Yuan‐Ming Chang Taiwan 13 497 0.6× 451 1.7× 120 1.2× 49 1.1× 77 1.7× 39 754
Darsith Jayachandran United States 8 540 0.7× 367 1.4× 140 1.4× 60 1.3× 101 2.2× 8 730
Sebastián Pazos Argentina 12 481 0.6× 169 0.7× 65 0.7× 28 0.6× 101 2.2× 63 576
Daewoong Kwon South Korea 21 1.4k 1.7× 702 2.7× 174 1.8× 39 0.8× 62 1.4× 69 1.5k

Countries citing papers authored by Min‐Cheng Chen

Since Specialization
Citations

This map shows the geographic impact of Min‐Cheng Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Min‐Cheng Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Min‐Cheng Chen more than expected).

Fields of papers citing papers by Min‐Cheng Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Min‐Cheng Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Min‐Cheng Chen. The network helps show where Min‐Cheng Chen may publish in the future.

Co-authorship network of co-authors of Min‐Cheng Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Min‐Cheng Chen. A scholar is included among the top collaborators of Min‐Cheng Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Min‐Cheng Chen. Min‐Cheng Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Okazaki, Yutaka, et al.. (2022). 32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display. SID Symposium Digest of Technical Papers. 53(1). 377–380. 5 indexed citations
2.
3.
Li, Haitong, Kai‐Shin Li, Chang-Hsien Lin, et al.. (2016). Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing. 1–2. 58 indexed citations
4.
5.
Sachid, Angada B., Yi‐Ju Chen, Chun‐Chi Chen, et al.. (2016). FinFET With Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits. IEEE Electron Device Letters. 38(1). 16–19. 42 indexed citations
6.
Chen, Min‐Cheng, et al.. (2016). SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory. IEEE Transactions on Electron Devices. 63(6). 2367–2373. 10 indexed citations
7.
Lee, Yao‐Jen, Guang-Li Luo, Fu-Ju Hou, et al.. (2016). Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A Review. IEEE Journal of the Electron Devices Society. 4(5). 286–293. 26 indexed citations
8.
9.
Li, Kai‐Shin, Min‐Cheng Chen, Jian-Ming Lü, et al.. (2015). Study of sub-5 nm RRAM, tunneling selector and selector less device. 385–388. 11 indexed citations
10.
Chen, Min‐Cheng, et al.. (2014). A device design of an integrated CMOS poly-silicon biosensor-on-chip to enhance performance of biomolecular analytes in serum samples. Biosensors and Bioelectronics. 61. 112–118. 29 indexed citations
11.
Chen, Min‐Cheng, K.-S. Li, Lain‐Jong Li, et al.. (2014). Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs. King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology). 33.5.1–33.5.4. 19 indexed citations
12.
Li, Kai‐Shin, ChiaHua Ho, Min‐Cheng Chen, et al.. (2014). Utilizing Sub-5 nm sidewall electrode technology for atomic-scale resistive memory fabrication. 1–2. 34 indexed citations
13.
Lin, T. D., Wen-Hsin Chang, Y. C. Chang, et al.. (2013). High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2. Applied Physics Letters. 103(25). 25 indexed citations
14.
Chen, Min‐Cheng, Chang-Hsien Lin, Chia‐Yi Lin, et al.. (2012). Sub-fM DNA sensitivity by self-aligned maskless thin-film transistor-based SoC bioelectronics. 4. 127–128.
15.
Chen, Min‐Cheng, Chia‐Yi Lin, Bo‐Yuan Chen, et al.. (2012). Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density. IEEE Electron Device Letters. 33(4). 591–593.
16.
Huang, Yu-Jie, Chia‐Yi Lin, Min‐Cheng Chen, et al.. (2012). A fully integrated hepatitis B virus DNA detection SoC based on monolithic polysilicon nanowire CMOS process. 124–125. 8 indexed citations
17.
Huang, Yu-Jie, et al.. (2012). Low-cost and ultra-sensitive poly-Si nanowire biosensor for Hepatitis B Virus (HBV) DNA detection. 89. 2303–2307. 1 indexed citations
18.
19.
Wang, Tahui, et al.. (2011). A Comparative Study of NBTI and RTN Amplitude Distributions in High- $\kappa$ Gate Dielectric pMOSFETs. IEEE Electron Device Letters. 33(2). 176–178. 7 indexed citations
20.
Chen, Min‐Cheng, Hou-Yu Chen, Chia-Yi Lin, et al.. (2010). A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology. 293. 36.2.1–36.2.4. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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