Chang-Hsien Lin

699 citations

20 papers · 526 indexed · h-index 8

Co-authors: Min‐Cheng Chen Kai‐Shin Li Wen‐Kuan Yeh Fu-Liang Yang Chenming Hu Yun-Fang Hou Chun‐Chi Chen Ming-Han Liao
Topics: Semiconductor materials and devices (11 papers)Ferroelectric and Negative Capacitance Devices (7 papers)Advanced Memory and Neural Computing (6 papers)
Cited by: Electrical and Electronic Engineering Materials Chemistry Cellular and Molecular Neuroscience
Journals: Applied Physics Letters IEEE Transactions on Electron Devices Materials Chemistry and Physics
Partner nations: Taiwan United States Saudi Arabia

In The Last Decade

Chang-Hsien Lin

18 papers receiving 512 citations

Peers

Countries citing papers authored by Chang-Hsien Lin

Since Specialization

Citations

This map shows the geographic impact of Chang-Hsien Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chang-Hsien Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chang-Hsien Lin more than expected).

Fields of papers citing papers by Chang-Hsien Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chang-Hsien Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chang-Hsien Lin. The network helps show where Chang-Hsien Lin may publish in the future.

Co-authorship network of co-authors of Chang-Hsien Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Chang-Hsien Lin. A scholar is included among the top collaborators of Chang-Hsien Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chang-Hsien Lin. Chang-Hsien Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation 2023 ·IEEE Transactions on Electron Devices ·Ying‐Chen Chen,(unknown),Chang-Hsien Lin,Yao‐Feng Chang	6
2	Nano Helical-Shaped Dual-Functional Resistive Memory for Low-Power Crossbar Array Application 2022 ·ACS Applied Engineering Materials ·Ying‐Chen Chen,(unknown),John G. Gibbs,Yifu Huang,Jack C. Lee,(unknown),Chang-Hsien Lin	3
3	Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory 2022 ·ECS Journal of Solid State Science and Technology ·Ying‐Chen Chen,Yao‐Feng Chang,(unknown),Chang-Hsien Lin	1
4	Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition 2016 ·Haitong Li,Tony F. Wu,Abbas Rahimi,Kai‐Shin Li,(unknown),Chang-Hsien Lin,(unknown),Mohamed M. Sabry,Sukru Burc Eryilmaz,Joon Sohn,(unknown),Min‐Cheng Chen,Tsung‐Ta Wu,Jia‐Min Shieh,Wen‐Kuan Yeh,Jan M. Rabaey,Subhasish Mitra,H.‐S. Philip Wong	110
5	Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing 2016 ·Haitong Li,Kai‐Shin Li,Chang-Hsien Lin,(unknown),(unknown),Min‐Cheng Chen,Tsung‐Ta Wu,Joon Sohn,Sukru Burc Eryilmaz,Jia‐Min Shieh,Wen‐Kuan Yeh,H.‐S. Philip Wong	58
6	First fully functionalized monolithic 3D+ IoT chip with 0.5 V light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM 2016 ·Fu-Kuo Hsueh,Chang‐Hong Shen,Jia‐Min Shieh,Kai‐Shin Li,(unknown),(unknown),(unknown),Chih-Chao Yang,Tung-Ying Hsieh,Chang-Hsien Lin,Bo‐Yuan Chen,(unknown),Guo‐Wei Huang,(unknown),Po-Hung Chen,Wen‐Kuan Yeh	19
7	A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS₂ FET 2016 ·King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology) ·(unknown),Kai‐Shin Li,Lain‐Jong Li,Ming‐Yang Li,Chang-Hsien Lin,Y.C. Chen,(unknown),(unknown),(unknown),(unknown),Min‐Cheng Chen,Jia‐Min Shieh,Wen‐Kuan Yeh,(unknown),Tahui Wang,Fu-Liang Yang,Chenming Hu	4
8	MoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability 2016 ·King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology) ·Kai‐Shin Li,(unknown),Lain‐Jong Li,Ming‐Yang Li,(unknown),(unknown),Chang-Hsien Lin,Yi‐Ju Chen,(unknown),Chien-Ting Wu,Min‐Cheng Chen,Jia‐Min Shieh,(unknown),Yu‐Lun Chueh,Fu-Liang Yang,Chenming Hu	20
9	Sub-60mV-swing negative-capacitance FinFET without hysteresis 2015 ·Kai‐Shin Li,(unknown),(unknown),Chang-Hsien Lin,(unknown),Chun‐Chi Chen,(unknown),Yun-Fang Hou,Ming-Han Liao,M. H. Lee,Min‐Cheng Chen,(unknown),Wen‐Kuan Yeh,Fu-Liang Yang,Sayeef Salahuddin,Chenming Hu	252
10	Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs 2014 ·King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology) ·Min‐Cheng Chen,(unknown),K.-S. Li,Lain‐Jong Li,Chang‐Hsiao Chen,Cheng‐Hao Chuang,(unknown),Y.C. Chen,Yun-Fang Hou,Chang-Hsien Lin,Chun‐Chi Chen,(unknown),(unknown),(unknown),Yao‐Jen Lee,(unknown),Tahui Wang,Fu-Liang Yang,Chenming Hu	19
11	A portable oxygen concentration detection and monitor system using a smartphone and a portable sensor module 2014 ·Ying‐Wen Bai,Chang-Hsien Lin	3
12	Estimating the detection stability of a Si nanowire sensor using an additional charging electrode 2013 ·Min‐Cheng Chen,Hsiao‐Chien Chen,(unknown),Yu‐Hsien Lin,J.R. Shih,Bowei Wang,Yun-Fang Hou,Yi‐Ju Chen,(unknown),Chang-Hsien Lin,Yi‐Ping Hsieh,ChiaHua Ho,Mu‐Yi Hua,Jian‐Tai Qiu,Tahui Wang,Fu-Liang Yang	1
13	Sub-fM DNA sensitivity by self-aligned maskless thin-film transistor-based SoC bioelectronics 2012 ·Min‐Cheng Chen,Chang-Hsien Lin,Chia‐Yi Lin,Fu-Kuo Hsueh,(unknown),(unknown),(unknown),(unknown),(unknown),Chih‐Ting Lin,(unknown),(unknown),Mu‐Yi Hua,Jian‐Tai Qiu,(unknown),Yao‐Jen Lee,Jia‐Min Shieh,ChiaHua Ho,Chenming Hu,Fu-Liang Yang	0
14	Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density 2012 ·IEEE Electron Device Letters ·Min‐Cheng Chen,Chia‐Yi Lin,Bo‐Yuan Chen,Chang-Hsien Lin,Guo‐Wei Huang,ChiaHua Ho,Tahui Wang,Chenming Hu,Fu-Liang Yang	0
15	Challenges of Low Effective-K approaches for future Cu interconnect 2009 ·(unknown),(unknown),(unknown),(unknown),Hsien‐Wei Chen,(unknown),Chang-Hsien Lin,Shin-Puu Jeng,S.L. Shue,C.-H. Yu	2
16	A full Cu damascene metallization process for sub-0.18 /spl mu/m RF CMOS SoC high Q inductor and MIM capacitor application at 2.4 GHz and 5.3 GHz 2001 ·Chang-Hsien Lin,Hong‐Ming Hsu,(unknown),T. R. Shih,S. M. Jang,C. H. Yu,M.S. Liang	16
17	Slotted vias for dual damascene interconnects in 1 Gb DRAMs 1999 ·R. Schnabel,G. Bronner,L. A. Clevenger,D. Dobuzinsky,G. Costrini,R. G. Filippi,Jeff Gambino,(unknown),(unknown),Chang-Hsien Lin,K.P. Müller,Georg Mueller,(unknown),C. Radens,Serge Weber,(unknown)	2
18	Heterointerface quality of InGaP–GaAs superlattices determined by photopumping, x-ray analysis, and transmission electron microscopy 1999 ·Applied Physics Letters ·Quankui Yang,(unknown),Chang-Hsien Lin,G. E. Stillman,N. Holonyak	7
19	Optimization of group V switching times for InGaP/GaAs heterostructures grown by LP-MOCVD 1997 ·Quankui Yang,(unknown),(unknown),Chang-Hsien Lin,(unknown),(unknown),Hao‐Chung Kuo,(unknown),G. E. Stillman	1
20	High performance non-alloyed pseudomorphic high electron mobility transistors 1996 ·Materials Chemistry and Physics ·C. K. Peng,W.H. Lan,(unknown),(unknown),(unknown),Chang-Hsien Lin	2

About Chang-Hsien Lin

Chang-Hsien Lin is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 20 papers that have together received 526 indexed citations. Recurring topics across this work include Semiconductor materials and devices (11 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and Advanced Memory and Neural Computing (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (497 citations), Materials Chemistry (199 citations) and Cellular and Molecular Neuroscience (29 citations). Chang-Hsien Lin has collaborated with scholars based in Taiwan, United States and Saudi Arabia. Frequent co-authors include Min‐Cheng Chen, Kai‐Shin Li, Wen‐Kuan Yeh, Fu-Liang Yang, Chenming Hu, Yun-Fang Hou, Chun‐Chi Chen, Ming-Han Liao, M. H. Lee and Sayeef Salahuddin. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Materials Chemistry and Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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