J. Höntschel

732 total citations
16 papers, 105 citations indexed

About

J. Höntschel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J. Höntschel has authored 16 papers receiving a total of 105 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 2 papers in Biomedical Engineering. Recurrent topics in J. Höntschel's work include Advancements in Semiconductor Devices and Circuit Design (14 papers), Semiconductor materials and devices (13 papers) and Silicon Carbide Semiconductor Technologies (4 papers). J. Höntschel is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (14 papers), Semiconductor materials and devices (13 papers) and Silicon Carbide Semiconductor Technologies (4 papers). J. Höntschel collaborates with scholars based in Germany, Czechia and United States. J. Höntschel's co-authors include Μ. Horstmann, T. Herrmann, S. Flachowsky, Hans Richter, J. Kučera, Ulrich Wulf, Maciej Wiatr, Angelika Hähnel, H. Blumtritt and Andreas Naumann and has published in prestigious journals such as IEEE Transactions on Electron Devices, Thin Solid Films and Solid-State Electronics.

In The Last Decade

J. Höntschel

16 papers receiving 99 citations

Peers

Countries citing papers authored by J. Höntschel

Since Specialization

Citations

This map shows the geographic impact of J. Höntschel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Höntschel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Höntschel more than expected).

Fields of papers citing papers by J. Höntschel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Höntschel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Höntschel. The network helps show where J. Höntschel may publish in the future.

Co-authorship network of co-authors of J. Höntschel

This figure shows the co-authorship network connecting the top 25 collaborators of J. Höntschel. A scholar is included among the top collaborators of J. Höntschel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Höntschel. J. Höntschel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

#	Work	Indexed citations
1	Channel Engineering for Nanotransistors in a Semiempirical Quantum Transport Model 2017 ·Mathematics ·Ulrich Wulf, J. Kučera, Hans Richter, Μ. Horstmann, Maciej Wiatr, J. Höntschel	4
2	Characterization of nanotransistors in a semiempirical model 2015 ·Thin Solid Films ·Ulrich Wulf, J. Kučera, Hans Richter, Maciej Wiatr, J. Höntschel	2
3	A QUANTITATIVE MODEL FOR QUANTUM TRANSPORT IN NANO-TRANSISTORS 2013 ·Nanosystems Physics Chemistry Mathematics ·Ulrich Wulf, (unknown), J. Kučera, Hans Richter, J. Höntschel	8
4	Thermal properties of quantum devices in integrated circuits embedded in a chip environment 2013 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), Ulrich Wulf, (unknown), Hans Richter, J. Höntschel	1
5	Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks 2013 ·Solid-State Electronics ·S. Flachowsky, T. Herrmann, J. Höntschel, (unknown), (unknown), Maciej Wiatr	1
6	Analytical expressions for the drain current of a nanotransistor in the off‐state regime 2013 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), Ulrich Wulf, J. Kučera, Hans Richter, J. Höntschel	2
7	Improving Accuracy and Precision of Strain Analysis by Energy-Filtered Nanobeam Electron Diffraction 2012 ·Microscopy and Microanalysis ·Angelika Hähnel, Manfred Reiche, Oussama Moutanabbir, H. Blumtritt, H. Geisler, J. Höntschel, (unknown)	6
8	Mobility and strain effects for <100> and <110> oriented silicon and SiGe transistor channels 2012 ·S. Flachowsky, T. Herrmann, J. Höntschel, (unknown), (unknown), Maciej Wiatr, Tim Baldauf, (unknown), (unknown)	3
9	Study of 22/20nm Tri-Gate transistors compatible in a low-cost hybrid FinFET/planar CMOS process 2011 ·Tim Baldauf, A. Wei, (unknown), S. Flachowsky, T. Herrmann, J. Höntschel, Μ. Horstmann, (unknown), (unknown)	2
10	Suppression of the corner effects in a 22 nm hybrid Tri-Gate/planar process 2011 ·Tim Baldauf, A. Wei, T. Herrmann, S. Flachowsky, (unknown), J. Höntschel, Μ. Horstmann, (unknown), (unknown)	4
11	Simulation and optimization of Tri-Gates in a 22 nm hybrid Tri-Gate/planar process 2011 ·Tim Baldauf, A. Wei, (unknown), S. Flachowsky, T. Herrmann, Thomas Feudel, J. Höntschel, Μ. Horstmann, (unknown), (unknown)	3
12	Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET 2010 ·IEEE Transactions on Electron Devices ·S. Flachowsky, (unknown), (unknown), T. Herrmann, J. Höntschel, Μ. Horstmann, (unknown), (unknown)	53
13	Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors 2010 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·S. Flachowsky, (unknown), T. Herrmann, (unknown), (unknown), (unknown), Andreas Naumann, (unknown), J. Höntschel, Μ. Horstmann	8
14	Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing 2010 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·(unknown), S. Flachowsky, T. Herrmann, (unknown), (unknown), Thomas Feudel, J. Höntschel, Μ. Horstmann	3
15	Effectiveness of Embedded-SiGe in Strained-SOI Substrates and Implications on Embedded-SiGe Stress Transfer Mechanics 2006 ·ECS Transactions ·(unknown), (unknown), Ian Cayrefourcq, J. Höntschel, (unknown), (unknown), (unknown), K. Hempel, (unknown), (unknown), (unknown), Μ. Horstmann, (unknown), (unknown), Eric Guiot	2
16	Simulation of quantum transport in monolithic ICs based on In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As RTDs and HEMTs with a quantum hydrodynamic transport model 2004 ·IEEE Transactions on Electron Devices ·J. Höntschel, (unknown), (unknown)	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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