J. Ocker

2.4k citations

21 papers · 1.4k indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 5%
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
Materials Chemistry top 10%
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides

Papers in ⓘ

Electrical and Electronic Engineering 21
- Semiconductor materials and devices 18
- Ferroelectric and Negative Capacitance Devices 15
- Advancements in Semiconductor Devices and Circuit Design 8
- Advanced Memory and Neural Computing 3
- Silicon Carbide Semiconductor Technologies 1
Condensed Matter Physics 3
- GaN-based semiconductor devices and materials 3

Co-authors: Thomas Mikolajick (20 shared papers)Stefan Slesazeck (12 shared papers)Halid Mulaosmanovic (8 shared papers)Stefan Müller (8 shared papers)Johannes Müller (8 shared papers)P. Polakowski (6 shared papers)Uwe Schroeder (3 shared papers)S. Flachowsky (5 shared papers)
Journals: IEEE Electron Device Letters (2 papers)ACS Applied Materials & Interfaces (2 papers)Advanced Electronic Materials (1 paper)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (1 paper)Journal of Applied Physics (1 paper)
Partner nations: Germany United States South Korea

In The Last Decade

J. Ocker

20 papers receiving 1.3k citations

Peers

Countries citing papers authored by J. Ocker

Since Specialization

Citations

This map shows the geographic impact of J. Ocker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Ocker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Ocker more than expected).

Fields of papers citing papers by J. Ocker

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Ocker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Ocker. The network helps show where J. Ocker may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Ocker, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Ocker Line = papers co-authored together J. Ocker links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 21 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Martin Trentzsch, S. Flachowsky, Ralf P. Richter, Paul Jarman, Benjamin Reimer, Dirk Utess, Sören Jansen, Halid Mulaosmanovic, Stefan Müller, Stefan Slesazeck, J. Ocker, Marko Noack, Johannes Müller, P. Polakowski, Jörg Schreiter, Sebastian Beyer, Thomas Mikolajick, B. Rice	2016	303
2	Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors ACS Applied Materials & Interfaces ·Halid Mulaosmanovic, J. Ocker, Stefan Müller, Uwe Schroeder, Johannes Müller, P. Polakowski, S. Flachowsky, Ralf van Bentum, Thomas Mikolajick, Stefan Slesazeck	2017	273
3	Novel ferroelectric FET based synapse for neuromorphic systems Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Halid Mulaosmanovic, J. Ocker, Stefan Müller, Marko Noack, Johannes Müller, P. Polakowski, Thomas Mikolajick, Stefan Slesazeck	2017	220
4	Complex Internal Bias Fields in Ferroelectric Hafnium Oxide ACS Applied Materials & Interfaces ·Tony Schenk, Michael Hoffmann, J. Ocker, Milan Pešić, Thomas Mikolajick, Uwe Schroeder	2015	219
5	Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Halid Mulaosmanovic, Stefan Slesazeck, J. Ocker, (unknown), Stefan Müller, S. Flachowsky, Johannes Müller, P. Polakowski, Paul Jarman, Sören Jansen, Sabine Kolodinski, Claudia Richter, S. Piontek, Tony Schenk, Alfred Kersch, Christopher Künneth, Ralf van Bentum, U. Schröder, Thomas Mikolajick	2015	115
6	High endurance strategies for hafnium oxide based ferroelectric field effect transistor Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Johannes Müller, P. Polakowski, Stefan Müller, Halid Mulaosmanovic, J. Ocker, Thomas Mikolajick, Stefan Slesazeck, S. Flachowsky, Martin Trentzsch	2016	88
7	Interplay Between Switching and Retention in HfO₂-Based Ferroelectric FETs IEEE Transactions on Electron Devices ·Halid Mulaosmanovic, Franz Müller, Maximilian Lederer, Tarek Ali, Raik Hoffmann, Konrad Seidel, Haidi Zhou, J. Ocker, Stefan Mueller, Stefan Dünkel, Dominik Kleimaier, Johannes Müller, Martin Trentzsch, Sven Beyer, Evelyn T. Breyer, Thomas Mikolajick, Stefan Slesazeck	2020	44
8	Application and Benefits of Target Programming Algorithms for Ferroelectric HfO₂ Transistors IRIS UNIMORE (University of Modena and Reggio Emilia) ·Haidi Zhou, J. Ocker, Andrea Padovani, (unknown), Martin Trentzsch, Stefan Dünkel, Halid Mulaosmanovic, Stefan Slesazeck, Luca Larcher, Sebastian Beyer, Stefan Müller, Thomas Mikolajick	2020	21
9	Reconfigurable Si Nanowire Nonvolatile Transistors Advanced Electronic Materials ·So Jeong Park, Dae‐Young Jeon, Sabrina Piontek, Matthias Grube, J. Ocker, V. Sessi, André Heinzig, Jens Trommer, Gyu‐Tae Kim, Thomas Mikolajick, W. Weber	2017	21
10	Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3 and HfO2 on AlGaN/GaN heterostructure capacitors Journal of Applied Physics ·Annett Winzer, Nadine Szabó, J. Ocker, Rico Hentschel, M. Schuster, F Schubert, Jan Gärtner, Andre Wachowiak, Thomas Mikolajick	2015	12
11	Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulses physica status solidi (a) ·Annett Winzer, Martin Schuster, Rico Hentschel, J. Ocker, U. Merkel, Α. Jahn, Andre Wachowiak, Thomas Mikolajick	2016	10
12	Endurance and targeted programming behavior of HfO₂-FeFETs Haidi Zhou, J. Ocker, Menno Mennenga, Marko Noack, Stefan Müller, Martin Trentzsch, Stefan Dünkel, Sven Beyer, Thomas Mikolajick	2020	7
13	Impact of field cycling on HfO₂ based non-volatile memory devices Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Uwe Schroeder, (unknown), Tony Schenk, Halid Mulaosmanovic, Stefan Slesazeck, J. Ocker, Claudia Richter, Ekaterina Yurchuk, K. Khullar, Johannes Müller, P. Polakowski, Everett D. Grimley, James M. LeBeau, S. Flachowsky, Sören Jansen, Sabine Kolodinski, Ralf van Bentum, Alfred Kersch, Christopher Künneth, Thomas Mikolajick	2016	6
14	Mechanism of Retention Degradation after Endurance Cycling of HfO 2 -based Ferroelectric Transistors Symposium on VLSI Technology ·Haidi Zhou, J. Ocker, Milan Pešić, Andrea Padovani, Martin Trentzsch, Stefan Dünkel, Johannes Müller, Sebastian Beyer, Luca Larcher, Foroozan Koushan, Stefan Müller, Thomas Mikolajick	2021	5
15	High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Nadine Szabó, Andre Wachowiak, Annett Winzer, J. Ocker, Jan Gärtner, Rico Hentschel, Alexander Schmid, Thomas Mikolajick	2016	5
16	Polarization Switching and Charge Trapping in HfO₂-Based Ferroelectric Transistors IEEE Electron Device Letters ·Haidi Zhou, J. Ocker, Stefan Müller, Milan Pešić, Thomas Mikolajick	2023	4
17	Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·J. Ocker, S. Kupke, Stefan Slesazeck, Thomas Mikolajick, Elke Erben, Maximilian Drescher, Andreas Naumann, Florian Lazarevic, R. Leitsmann	2014	3
18	On the voltage scaling potential of SONOS non-volatile memory transistors Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·J. Ocker, Stefan Slesazeck, Thomas Mikolajick, S. Buschbeck, Sebastian Günther, Ekaterina Yurchuk, Raik Hoffmann, V. Beyer	2015	2
19	Characterization of multilayer gate stacks by multi-phonon transient trap spectroscopy J. Ocker, Stefan Slesazeck, Thomas Mikolajick	2013	2
20	Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation IEEE Electron Device Letters ·S. Kupke, Steve Knebel, J. Ocker, Stefan Slesazeck, Rimoon Agaiby, Martin Trentzsch, Thomas Mikolajick	2015	2

About J. Ocker

J. Ocker is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Inorganic Chemistry, having authored 21 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (18 papers), Ferroelectric and Negative Capacitance Devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), MXene and MAX Phase Materials (6 papers), GaN-based semiconductor devices and materials (3 papers), Advanced Memory and Neural Computing (3 papers), Ga2O3 and related materials (2 papers) and Silicon Carbide Semiconductor Technologies (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Materials Chemistry (701 citations), Condensed Matter Physics (30 citations), Cellular and Molecular Neuroscience (44 citations) and Hardware and Architecture (15 citations). J. Ocker has collaborated with scholars based in Germany, United States and South Korea. Frequent co-authors include Thomas Mikolajick, Stefan Slesazeck, Halid Mulaosmanovic, Stefan Müller, Johannes Müller, P. Polakowski, Uwe Schroeder, S. Flachowsky, Marko Noack and Tony Schenk. Their work appears in journals such as IEEE Electron Device Letters, ACS Applied Materials & Interfaces, Advanced Electronic Materials, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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