J. Ocker

2.4k total citations
21 papers, 1.4k citations indexed

About

J. Ocker is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, J. Ocker has authored 21 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 3 papers in Condensed Matter Physics. Recurrent topics in J. Ocker's work include Semiconductor materials and devices (18 papers), Ferroelectric and Negative Capacitance Devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). J. Ocker is often cited by papers focused on Semiconductor materials and devices (18 papers), Ferroelectric and Negative Capacitance Devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). J. Ocker collaborates with scholars based in Germany, United States and Italy. J. Ocker's co-authors include Thomas Mikolajick, Stefan Slesazeck, Halid Mulaosmanovic, Johannes Müller, Stefan Müller, P. Polakowski, Uwe Schroeder, S. Flachowsky, Marko Noack and Tony Schenk and has published in prestigious journals such as Journal of Applied Physics, ACS Applied Materials & Interfaces and IEEE Transactions on Electron Devices.

In The Last Decade

J. Ocker

20 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Ocker Germany 11 1.3k 701 52 50 44 21 1.4k
Maximilian Lederer Germany 24 1.7k 1.3× 915 1.3× 56 1.1× 64 1.3× 36 0.8× 111 1.8k
Raik Hoffmann Germany 20 1.9k 1.4× 1.0k 1.5× 54 1.0× 86 1.7× 41 0.9× 72 1.9k
Kai‐Shin Li Taiwan 13 739 0.6× 302 0.4× 51 1.0× 59 1.2× 47 1.1× 36 804
Kaizhen Han Singapore 20 975 0.7× 369 0.5× 43 0.8× 134 2.7× 48 1.1× 88 1.1k
S. Flachowsky Germany 11 1.0k 0.8× 493 0.7× 27 0.5× 65 1.3× 21 0.5× 24 1.0k
Min‐Cheng Chen Taiwan 14 805 0.6× 258 0.4× 46 0.9× 99 2.0× 45 1.0× 34 850
Lu Tai China 14 585 0.4× 332 0.5× 24 0.5× 28 0.6× 34 0.8× 48 620
P. Polakowski Germany 22 3.4k 2.5× 2.1k 3.0× 80 1.5× 118 2.4× 62 1.4× 32 3.4k
Jing Wen China 12 401 0.3× 255 0.4× 43 0.8× 32 0.6× 70 1.6× 28 460
Ralf van Bentum Germany 9 1.1k 0.9× 689 1.0× 21 0.4× 37 0.7× 20 0.5× 14 1.2k

Countries citing papers authored by J. Ocker

Since Specialization
Citations

This map shows the geographic impact of J. Ocker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Ocker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Ocker more than expected).

Fields of papers citing papers by J. Ocker

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Ocker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Ocker. The network helps show where J. Ocker may publish in the future.

Co-authorship network of co-authors of J. Ocker

This figure shows the co-authorship network connecting the top 25 collaborators of J. Ocker. A scholar is included among the top collaborators of J. Ocker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Ocker. J. Ocker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mueller, Stefan, Marko Noack, J. Ocker, et al.. (2024). Ferroelectric Hafnia: A New Age for FRAM has Started. 1–6.
2.
Ocker, J., et al.. (2023). Polarization Switching and Charge Trapping in HfO2-Based Ferroelectric Transistors. IEEE Electron Device Letters. 44(11). 1903–1906. 4 indexed citations
3.
Ocker, J., Milan Pešić, Andrea Padovani, et al.. (2021). Mechanism of Retention Degradation after Endurance Cycling of HfO 2 -based Ferroelectric Transistors. Symposium on VLSI Technology. 1–2. 5 indexed citations
4.
Ocker, J., Marko Noack, Stefan Müller, et al.. (2020). Endurance and targeted programming behavior of HfO2-FeFETs. 1–4. 7 indexed citations
5.
Mulaosmanovic, Halid, Franz Müller, Maximilian Lederer, et al.. (2020). Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs. IEEE Transactions on Electron Devices. 67(8). 3466–3471. 44 indexed citations
6.
Ocker, J., Andrea Padovani, Martin Trentzsch, et al.. (2020). Application and Benefits of Target Programming Algorithms for Ferroelectric HfO2 Transistors. IRIS UNIMORE (University of Modena and Reggio Emilia). 18.6.1–18.6.4. 21 indexed citations
7.
Mulaosmanovic, Halid, J. Ocker, Stefan Müller, et al.. (2017). Novel ferroelectric FET based synapse for neuromorphic systems. Fraunhofer-Publica (Fraunhofer-Gesellschaft). T176–T177. 220 indexed citations
8.
Mulaosmanovic, Halid, J. Ocker, Stefan Müller, et al.. (2017). Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors. ACS Applied Materials & Interfaces. 9(4). 3792–3798. 273 indexed citations
9.
Park, So Jeong, Dae‐Young Jeon, Matthias Grube, et al.. (2017). Reconfigurable Si Nanowire Nonvolatile Transistors. Advanced Electronic Materials. 4(1). 21 indexed citations
10.
Müller, Johannes, P. Polakowski, Stefan Müller, et al.. (2016). High endurance strategies for hafnium oxide based ferroelectric field effect transistor. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–7. 88 indexed citations
11.
Hentschel, Rico, J. Ocker, U. Merkel, et al.. (2016). Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulses. physica status solidi (a). 213(5). 1246–1251. 10 indexed citations
12.
Trentzsch, Martin, S. Flachowsky, Ralf P. Richter, et al.. (2016). A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 11.5.1–11.5.4. 303 indexed citations
13.
Wachowiak, Andre, et al.. (2016). High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 35(1). 5 indexed citations
14.
Ocker, J., Stefan Slesazeck, Thomas Mikolajick, et al.. (2015). On the voltage scaling potential of SONOS non-volatile memory transistors. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 25. 118–121. 2 indexed citations
15.
16.
Mulaosmanovic, Halid, Stefan Slesazeck, J. Ocker, et al.. (2015). Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 26.8.1–26.8.3. 115 indexed citations
17.
Schenk, Tony, Michael Hoffmann, J. Ocker, et al.. (2015). Complex Internal Bias Fields in Ferroelectric Hafnium Oxide. ACS Applied Materials & Interfaces. 7(36). 20224–20233. 219 indexed citations
18.
Knebel, Steve, et al.. (2015). Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation. IEEE Electron Device Letters. 36(5). 430–432. 2 indexed citations
19.
Ocker, J., Stefan Slesazeck, Thomas Mikolajick, et al.. (2014). Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 75. 86–89. 3 indexed citations
20.
Ocker, J., Stefan Slesazeck, & Thomas Mikolajick. (2013). Characterization of multilayer gate stacks by multi-phonon transient trap spectroscopy. 110. 1–4. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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