Kai‐Shin Li

1.1k total citations
36 papers, 804 citations indexed

About

Kai‐Shin Li is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Kai‐Shin Li has authored 36 papers receiving a total of 804 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Kai‐Shin Li's work include Semiconductor materials and devices (19 papers), Advanced Memory and Neural Computing (17 papers) and Ferroelectric and Negative Capacitance Devices (17 papers). Kai‐Shin Li is often cited by papers focused on Semiconductor materials and devices (19 papers), Advanced Memory and Neural Computing (17 papers) and Ferroelectric and Negative Capacitance Devices (17 papers). Kai‐Shin Li collaborates with scholars based in Taiwan, United States and Philippines. Kai‐Shin Li's co-authors include Min‐Cheng Chen, Wen‐Kuan Yeh, Chang-Hsien Lin, Jia‐Min Shieh, Fu-Liang Yang, Chenming Hu, Yun-Fang Hou, M. H. Lee, Chun‐Chi Chen and Ming-Han Liao and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Kai‐Shin Li

36 papers receiving 787 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kai‐Shin Li Taiwan 13 739 302 59 51 47 36 804
Wen‐Kuan Yeh Taiwan 17 1.1k 1.5× 238 0.8× 125 2.1× 48 0.9× 32 0.7× 93 1.2k
Shosuke Fujii Japan 15 706 1.0× 238 0.8× 55 0.9× 48 0.9× 51 1.1× 53 748
Jau-Yi Wu Taiwan 8 388 0.5× 216 0.7× 40 0.7× 53 1.0× 39 0.8× 21 474
Tsung‐Ta Wu Taiwan 13 469 0.6× 181 0.6× 53 0.9× 49 1.0× 28 0.6× 25 507
Min‐Cheng Chen Taiwan 14 805 1.1× 258 0.9× 99 1.7× 46 0.9× 45 1.0× 34 850
Sven Beyer Germany 19 1.3k 1.7× 469 1.6× 68 1.2× 85 1.7× 38 0.8× 48 1.3k
Stefan Dünkel Germany 16 1.1k 1.5× 400 1.3× 53 0.9× 78 1.5× 31 0.7× 37 1.1k
Ali Razavieh United States 10 741 1.0× 348 1.2× 127 2.2× 29 0.6× 90 1.9× 14 824
Martin Trentzsch Germany 18 1.5k 2.1× 696 2.3× 46 0.8× 74 1.5× 33 0.7× 40 1.6k
N. Castellani France 16 697 0.9× 269 0.9× 39 0.7× 123 2.4× 99 2.1× 57 739

Countries citing papers authored by Kai‐Shin Li

Since Specialization
Citations

This map shows the geographic impact of Kai‐Shin Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kai‐Shin Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kai‐Shin Li more than expected).

Fields of papers citing papers by Kai‐Shin Li

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kai‐Shin Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kai‐Shin Li. The network helps show where Kai‐Shin Li may publish in the future.

Co-authorship network of co-authors of Kai‐Shin Li

This figure shows the co-authorship network connecting the top 25 collaborators of Kai‐Shin Li. A scholar is included among the top collaborators of Kai‐Shin Li based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kai‐Shin Li. Kai‐Shin Li is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, Chenyu, Baofang Cai, Yi‐Ju Chen, et al.. (2024). Dual-Function Unipolar Top-pSOT-MRAM for All-Spin Probabilistic Computing with Ultra-Dense Coupling and Adaptive Temporal Coding. 1–4. 1 indexed citations
2.
Chang, Wen‐Hao, Jyun‐Hong Chen, Kai‐Shin Li, et al.. (2023). Self-powered broadband photodetection enabled by facile CVD-grown MoS2/GaN heterostructures. Nanoscale. 15(45). 18233–18240. 11 indexed citations
3.
Yang, Tilo H., Chih-Hao Yang, Kristan Bryan Simbulan, et al.. (2023). Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET. npj 2D Materials and Applications. 7(1). 37 indexed citations
4.
Li, Kai‐Shin, Jia‐Min Shieh, Yi‐Ju Chen, et al.. (2023). First BEOL-compatible, 10 ns-fast, and Durable 55 nm Top-pSOT-MRAM with High TMR (>130%). 1–4. 10 indexed citations
5.
Li, Kai‐Shin, Chenming Hu, Jhih‐Min Lin, et al.. (2023). Optimizing the Ferroelectric Properties of Hf1–xZrxO2 Films via Crystal Orientation. ACS Applied Electronic Materials. 5(2). 1114–1122. 7 indexed citations
6.
Li, Minfang, Kai‐Shin Li, Jyun‐Hong Chen, et al.. (2023). Dual-mode frequency multiplier in graphene-base hot electron transistor. Nanoscale. 15(6). 2586–2594. 4 indexed citations
7.
Yang, Tilo H., Kristan Bryan Simbulan, Shang‐Hsien Hsieh, et al.. (2022). Defect-engineered room temperature negative differential resistance in monolayer MoS2 transistors. Nanoscale Horizons. 7(12). 1533–1539. 6 indexed citations
8.
Li, Kai‐Shin, Jia‐Min Shieh, Wei J. Chen, et al.. (2021). First Demonstration of Interface-Enhanced SAF Enabling 400°C-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels. Symposium on VLSI Technology. 1–2. 1 indexed citations
9.
Chung, Yun-Yan, Jia‐Min Shieh, Sheng‐Kai Su, et al.. (2019). Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiO$_{{x}}$ /Si Substrates Using Area-Selective CVD Technology. IEEE Transactions on Electron Devices. 66(12). 5381–5386. 9 indexed citations
10.
Li, Yanlin, Kuei‐Shu Chang‐Liao, Dun‐Bao Ruan, et al.. (2019). Improved Electrical Characteristics of Bulk FinFETs With SiGe Super-Lattice-Like Buried Channel. IEEE Electron Device Letters. 40(2). 181–184. 18 indexed citations
11.
Cheng, Chao-Ching, Yun-Yan Chung, Jyun‐Hong Chen, et al.. (2019). First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate. T244–T245. 30 indexed citations
12.
Chen, Yu‐Jia, et al.. (2019). Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device. IEEE Transactions on Electron Devices. 67(1). 113–117. 1 indexed citations
13.
Chen, Kuan‐Ting, Chieh Lo, Ming-Han Liao, et al.. (2018). Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance). IEEE Journal of the Electron Devices Society. 6. 900–904. 15 indexed citations
14.
Chen, Wei-Hao, Chien-Fu Chen, Yi‐Ju Chen, et al.. (2018). A Dual-Split-Controlled 4P2N 6T SRAM in Monolithic 3D-ICs With Enhanced Read Speed and Cell Stability for IoT Applications. IEEE Electron Device Letters. 39(8). 1167–1170. 6 indexed citations
15.
Hsueh, Fu-Kuo, Wei-Hao Chen, Kai‐Shin Li, et al.. (2018). Ultra-Low Power 3D NC-FinFET-based Monolithic 3D+ -IC with Computing-in-Memory for Intelligent IoT Devices. 15.1.1–15.1.4. 8 indexed citations
16.
17.
Li, Haitong, Kai‐Shin Li, Chang-Hsien Lin, et al.. (2016). Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing. 1–2. 58 indexed citations
18.
Chang, Meng‐Fan, Albert Lee, Chien-Chen Lin, et al.. (2015). Read circuits for resistive memory (ReRAM) and memristor-based nonvolatile Logics. 569–574. 10 indexed citations
19.
Li, Kai‐Shin, Min‐Cheng Chen, Jian-Ming Lü, et al.. (2015). Study of sub-5 nm RRAM, tunneling selector and selector less device. 385–388. 11 indexed citations
20.
Li, Kai‐Shin, ChiaHua Ho, Min‐Cheng Chen, et al.. (2014). Utilizing Sub-5 nm sidewall electrode technology for atomic-scale resistive memory fabrication. 1–2. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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