W. Krull

484 total citations
68 papers, 323 citations indexed

About

W. Krull is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, W. Krull has authored 68 papers receiving a total of 323 indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 14 papers in Computational Mechanics. Recurrent topics in W. Krull's work include Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (25 papers). W. Krull is often cited by papers focused on Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (25 papers). W. Krull collaborates with scholars based in United States, Japan and France. W. Krull's co-authors include F.T. Brady, H.L. Hughes, Shuguang Li, Karuppanan Sekar, Robert E. Stahlbush, D. C. Jacobson, H. E. Boesch, D.E. Burk, Michael L. Alles and Hyunsang Hwang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

W. Krull

56 papers receiving 296 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W. Krull United States	10	284	74	48	46	26	68	323
T. Kuroi Japan	10	349 1.2×	58 0.8×	64 1.3×	97 2.1×	41 1.6×	72	392
B. Anthony United States	10	292 1.0×	178 2.4×	75 1.6×	52 1.1×	28 1.1×	19	331
Yu. N. Pyrkov Russia	10	200 0.7×	153 2.1×	100 2.1×	17 0.4×	32 1.2×	31	326
Shin Sumida Japan	10	322 1.1×	31 0.4×	73 1.5×	14 0.3×	23 0.9×	32	332
D. Wristers United States	9	344 1.2×	118 1.6×	37 0.8×	26 0.6×	16 0.6×	25	354
A. Grouillet France	11	257 0.9×	56 0.8×	68 1.4×	58 1.3×	33 1.3×	35	290
Jonas Jakutis Neto Brazil	10	234 0.8×	206 2.8×	158 3.3×	11 0.2×	30 1.2×	31	370
Katsuhiko Nomoto India	6	368 1.3×	299 4.0×	24 0.5×	30 0.7×	22 0.8×	12	386
Hiroko Tashiro Japan	11	311 1.1×	115 1.6×	88 1.8×	33 0.7×	27 1.0×	36	349
Jiro Ryuta Japan	8	261 0.9×	127 1.7×	84 1.8×	23 0.5×	52 2.0×	12	298

Countries citing papers authored by W. Krull

Since Specialization

Citations

This map shows the geographic impact of W. Krull's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Krull with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Krull more than expected).

Fields of papers citing papers by W. Krull

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Krull. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Krull. The network helps show where W. Krull may publish in the future.

Co-authorship network of co-authors of W. Krull

This figure shows the co-authorship network connecting the top 25 collaborators of W. Krull. A scholar is included among the top collaborators of W. Krull based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Krull. W. Krull is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nagayama, Tsutomu, Hiroshi Onoda, Yoshihiro Koga, et al.. (2011). Cluster Ion Implantation for Process Application -Carbon Cluster co-Implantation-. AIP conference proceedings. 105–108. 1 indexed citations

Wang, Xincai, et al.. (2009). Silicon-Carbon Formed Using Cluster-Carbon Implant and Laser-Induced Epitaxy for Application as Source/Drain Stressors in Strained n-Channel MOSFETs. Journal of The Electrochemical Society. 156(5). H361–H361. 5 indexed citations

Sekar, Karuppanan, et al.. (2008). Optimization of ClusterCarbon™ process parameters for strained Si lattice. Materials Science and Engineering B. 154-155. 122–125. 1 indexed citations

Hwang, Sunhwan, et al.. (2006). Investigation of Converted p+ poly-Si Gate Formed by B[sub 18]H[sub X]+] Cluster Ion Implantation. AIP conference proceedings. 866. 163–166. 2 indexed citations

Borland, John, W. Krull, D. C. Jacobson, et al.. (2006). 45nm Node p+ USJ Formation With High Dopant Activation And Low Damage. 4–9. 7 indexed citations

Krull, W., et al.. (2005). Electrolytic Analysis of Oxide Leakage in Simox Material. 22–23.

Kawasaki, Yoji, T. Kuroi, Takashi Yamashita, et al.. (2005). Ultra-shallow junction formation by B18H22 ion implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 25–29. 34 indexed citations

Brady, F.T., Shuguang Li, & W. Krull. (2003). A detailed study of the changes in buried oxide charge as a function of processing and irradiation. 156–157.

Brady, F.T., et al.. (2003). Studies of defects and buried oxides in SIMOX based SOI materials. 63–63.

10.

Krull, W., et al.. (2003). Demonstration of the benefits of SOI for high temperature operation. 69–69. 7 indexed citations

11.

Campisi, G.J., P. Roitman, David S. Simons, & W. Krull. (2002). A SIMS study of the deuterium distribution in SIMOX buried oxides. 16–17.

12.

Alles, Michael L. & W. Krull. (1996). Advanced manufacturing of SIMOX for low power electronics. Solid-State Electronics. 39(4). 499–504. 6 indexed citations

13.

Mrstik, B. J., P. J. McMarr, H.L. Hughes, M.J. Anc, & W. Krull. (1995). Improvement in electrical properties of buried SiO2 layers by high-temperature oxidation. Applied Physics Letters. 67(22). 3283–3285. 5 indexed citations

14.

Krull, W., et al.. (1993). Manufacturing technology for 200mm SIMOX Wafers. Microelectronic Engineering. 22(1-4). 351–354. 2 indexed citations

15.

Stahlbush, Robert E., H.L. Hughes, & W. Krull. (1993). Reduction of charge trappings and electron tunneling in SIMOX by supplemental implantation of oxygen. IEEE Transactions on Nuclear Science. 40(6). 1740–1747. 25 indexed citations

16.

Brady, F.T., et al.. (1990). Radiation-induced charge trapping in implanted buried oxides. Journal of Applied Physics. 68(12). 6143–6148. 10 indexed citations

17.

Brady, F.T., Shuguang Li, & W. Krull. (1990). A study of the effects of processing on the response of implanted buried oxides to total dose irradiation. IEEE Transactions on Nuclear Science. 37(6). 1995–2000. 6 indexed citations

18.

Brady, F.T., S. S. Li, & W. Krull. (1989). C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation. Journal of Electronic Materials. 18(3). 385–389. 5 indexed citations

19.

Brady, F.T., et al.. (1988). Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation. Applied Physics Letters. 52(11). 886–888. 23 indexed citations

20.

Krull, W., et al.. (1988). Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors. IEEE Transactions on Nuclear Science. 35(6). 1657–1661. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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